IEICE Technical Report

Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380

Silicon Device and Materials

Workshop Date : 2013-10-17 - 2013-10-18 / Issue Date : 2013-10-10

SDM2013-88
[Invited Talk] Technological Trend of SiC Power Devices
Takashi Shinohe (TOSHIBA)
pp. 1 - 4

SDM2013-89
Electrical Properties and Reliability of Ultrathin HfN Gate Insulator Formed on Si(100) and Si(110)
Nithi Atthi, Dae-Hee Han, Shun-ichiro Ohmi (Tokyo Inst. of Tech.)
pp. 5 - 9

SDM2013-90
Effect of silicon surface roughness on 3-D MOS capacitor with ultrathin HfON gate insulator formed by ECR plasma sputtering
Dae-Hee Han, Shun-ichiro Ohmi (Tokyo Inst. of Tech.)
pp. 11 - 14

SDM2013-91
A device structure design of multi-gate MOSFETs based on carrier mobility characteristics of atomically flattened Si surface
Rihito Kuroda, Yukihisa Nakao, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.)
pp. 15 - 20

SDM2013-92
Si photodiode wiht high sensitivity and high stability to UV-light with 100% internal Q.E. and high transmittance on-chip multilayer dielectric stack
Yasumasa Koda, Rihito Kuroda, Yukihisa Nakao, Shigetoshi Sugawa (Tohoku Univ.)
pp. 21 - 25

SDM2013-93
A Study on Nitrogen-Doped LaB6 Thin Film Formation and Its Device Applications
Yasutaka Maeda, Shun-ichiro Ohmi (Tokyo Inst. of Tech.), Tetsuya Goto, Tadahiro Ohmi (Tohoku Univ.)
pp. 27 - 31

SDM2013-94
Introduction of the Bias Operation Hard X-ray Photoelectron Spectroscopy: Evaluation for Insulator/Si interface
Norihiro Ikeno, Kohki Nagata (Meiji Univ.), Hiroshi Oji, Ichiro Hirosawa (JASRI), Atsushi Ogura (Meiji Univ.)
pp. 33 - 36

SDM2013-95
Classical molecular dynamics simulations of plasma-induced physical damage -- defect generation mechanisms in fin-type MOSFET --
Koji Eriguchi, Asahiko Matsuda, Yoshinori Nakakubo, Yoshinori Takao, Kouichi Ono (Kyoto Univ.)
pp. 37 - 40

SDM2013-96
Design method of stacked type non-volatile memory
Shigeyoshi Watanabe (Shonan Inst. of Tech.)
pp. 41 - 46

SDM2013-97
Effects of plasma-induced charging damage on random telegraph noise (RTN) behaviors in advanced MOSFETs
Masayuki Kamei, Yoshinori Nakakubo, Yoshinori Takao, Koji Eriguchi, Kouichi Ono (Kyoto Univ.)
pp. 47 - 50

SDM2013-98
Study of Time Constant Analysis in Random Telegraph Noise at the Subthreshold Voltage Region
Akihiro Yonezawa, Akinobu Teramoto, Toshiki Obara, Rihito Kuroda, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.)
pp. 51 - 56

Note: Each article is a technical report without peer review, and its polished version will be published elsewhere.

The Institute of Electronics, Information and Communication Engineers (IEICE), Japan