Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380
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ED2014-53
[Invited Talk]
Highly sensitive GaAsSb-based backward diodes for millimeter-wave detection
Tsuyoshi Takahashi, Masaru Sato, Yasuhiro Nakasha, Shoichi Shiba, Naoki Hara, Taisuke Iwai (Fujitsu Labs.)
pp. 1 - 6
ED2014-54
The Theoretical Characteristic and its Experimental Verification of GaAsSb/InGaAs Double-Gate Tunnel FET
Kazumi Ohashi, Motohiko Fujimatsu, Yasuyuki Miyamoto (Tokyo Inst. of Tech.)
pp. 7 - 11
ED2014-55
Analysis of effects of dislocation scattering on device characteristics of InSb HEMT
Shota Hatsushiba, Shohei Nagai, Sachie Fujikawa (TUS), Shinsuke Hara, Akira Endoh, Issei Watanabe, Akifumi Kasamatsu (NICT), Hiroki I. Fujishiro (TUS)
pp. 13 - 18
ED2014-56
[Invited Talk]
InGaAs MOSFET Source Structures Toward High Speed/low Power Applications
Yasuyuki Miyamoto, Toru Kanazawa, Yoshiharu Yonai, Atsushi Kato, Motohiko Fujimatsu, Masashi Kashiwano, Kazuto Ohsawa, Kazumi Ohashi (Tokyo Inst. of Tech.)
pp. 19 - 24
ED2014-57
Analysis of Mechanisms of Delay Time Generation in III-V DG MOSFETs
Yuki Yajima, Ryoko Ohama, Sachie Fujikawa, Hiroki I. Fujishiro (TUS)
pp. 25 - 28
ED2014-58
Improvement of Off-State Characteristics with a P-Type Capping Layer in GaAs JPHEMT
Katsuhiko Takeuchi, Satoshi Taniguchi, Masashi Yanagita (Sony), Yuji Sasaki, Mitsuhiro Nakamura (Sony Semiconductor), Shinichi Wada (Sony)
pp. 29 - 34
ED2014-59
Fabrication of Carbon nanotube TFT for sheet electronic device by printing method.
Hiroyuki Endoh, Noriyuki Tonouchi, Fumiyuki Nihey (NEC Corp.), Tsuyoshi Sekitani, Takao Someya (Univ.of Tokyo)
pp. 35 - 40
ED2014-60
Band offset at Al2O3/β-Ga2O3 Heterojunctions
Takafumi Kamimura (NICT), Kohei Sasaki (Tamura Corp.), Man Hoi Wong, Daivasigamani Krishnamurthy (NICT), Akito Kuramata (Tamura Corp.), Takekazu Masui (Koha Co., Ltd.), Shigenobu Yamakoshi (Tamura Corp.), Masataka Higashiwaki (NICT)
pp. 41 - 46
ED2014-61
HAXPES Analysis for GaAs Surface State for Electronics Devices
Yoshihiro Saito, Daisuke Tsurumi, Junji Iihara, Aiko Tominaga, Takumi Yonemura, Koji Yamaguchi (SEI)
pp. 47 - 50
Note: Each article is a technical report without peer review, and its polished version will be published elsewhere.