IEICE Technical Report

Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380

Silicon Device and Materials

Workshop Date : 2014-11-06 - 2014-11-07 / Issue Date : 2014-10-30

SDM2014-96
An Analytical Modeling for Asymmetric Double Gate Tunnel Field Effect Transistor
Lv Hongfei, Shingo Sato, Yasuhisa Omura (Kansai Univ.), Abhijit Mallik (Univ. Calcutta)
pp. 1 - 6

SDM2014-97
Physics-based Analytical Model for Gate-on-Germanium Source (GoGeS) TFET
Yasuhisa Omura, Shingo Sato (Kansai Univ.), Abhijit Mallik (Univ. Calcutta)
pp. 7 - 12

SDM2014-98
Three-dimensional calculation of ion implantation to SiC substrate
Minoru Okamoto, Mamoru Shimizu, Yasuyuki Ohkura, Ken Yamaguchi, Hideaki Koike (AdvanceSoft)
pp. 13 - 18

SDM2014-99
Spice Model of SiC Power MOSFET (DioMOS) -- Modeling Methodology for Reverse Current-voltage Characteristics of SiC --
Tetsuya Yamamoto, Tetsuro Sawai, Nobuyuki Horikawa, Yoshihiko Kanzawa, Kenji Mizutani, Nobuyuki Otsuka, Eiji Fujii (Panasonic)
pp. 19 - 24

SDM2014-100
[Invited Talk] Device simulation -- More than 30 years in Toshiba's TCAD --
Naoyuki Shigyo (Toshiba)
pp. 25 - 30

SDM2014-101
[Invited Talk] Recent Progress in Electronic Device Materials Design by Computational Physics
Hiroyuki Kageshima (Shimane Univ.)
pp. 31 - 36

SDM2014-102
[Invited Talk] Modeling and Simulation of Charge-Trapping Memory and Reliability Issues
Takamitsu Ishihara, Naoki Yasuda, Shosuke Fujii (Toshiba)
pp. 37 - 42

SDM2014-103
[Invited Talk] SISPAD 2014 Review
Kenichiro Sonoda (Renesas Electronics)
pp. 43 - 46

SDM2014-104
Stress and Doping Impact on Intrinsic Point Defect Behaviour in Growing Single Crystal Silicon
Koji Sueoka, Eiji Kamiyama, Kozo Nakamura (Okayama Pref. Univ.), Jan Vanhellemont (Ghent Univ.)
pp. 47 - 52

SDM2014-105
Quasi-Ballistic Transport Parameters in Si Double-Gate MOSFETs Extracted Using Monte Carlo Method
Hideaki Tsuchiya, Ryoma Ishida (Kobe Univ.), Yoshinari Kamakura, Nobuya Mori (Osaka Univ.), Shigeyasu Uno (Ritsumeikan Univ.), Matsuto Ogawa (Kobe Univ.)
pp. 53 - 58

SDM2014-106
[Invited Talk] Statistical analysis of random telegraph noise and its consequence for modeling of oxide traps
Hiroshi Miki (Hitachi)
pp. 59 - 64

SDM2014-107
[Invited Talk] Interface Engineering for High Mobility Ge MOSFETs: Surface Orientation and Scattering Mechanism
ChoongHyun Lee, Tomonori Nishimura, Akira Toriumi (Univ. of Tokyo)
pp. 65 - 70

Note: Each article is a technical report without peer review, and its polished version will be published elsewhere.

The Institute of Electronics, Information and Communication Engineers (IEICE), Japan