Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380
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ED2015-68
Study on AlGaN formation on alpha-(AlGa)2O3 by surface nitridation using radio frequency nitrogen plasma
Tsutomu Araki, Akira Buma, Nao Masuda, Yasushi Nanishi (Ritsumeikan Univ.), Masaya Oda, Toshimi Hitora (FLOSFIA)
pp. 1 - 4
ED2015-69
Growth of AlN with annealing on different misoriented c-plane sapphire
Shuhei Suzuki, Chia-Hung Lin, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.), Hiroyuki Fukuyama (Tohoku Univ.)
pp. 5 - 9
ED2015-70
AlN growth on AlN/Sapphire substrate by RF-HVPE
Daiki Yasui, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.), Motoaki Iwaya, Isamu Akasaki (Meijo Univ.), Hiroshi Amano (Nagoya Univ.)
pp. 11 - 14
ED2015-71
Electronic and optical characteristics of an m-plane freestanding GaN substrate grown by hydride vapor phase epitaxy on a GaN seed crystal synthesized by the ammonothermal method using an acidic mineralizer
Kazunobu Kojima (Tohoku Univ.), Yusuke Tsukada (MCC), Erika Furukawa, Makoto Saito (Tohoku Univ.), Yutaka Mikawa, Shuichi Kubo, Hirotaka Ikeda, Kenji Fujito (MCC), Akira Uedono (Tsukuba Univ.), Shigefusa F. Chichibu (Tohoku Univ.)
pp. 15 - 19
ED2015-72
Analysis of hole concentration and mobility of lightly Mg-doped p-type GaN by Hall-effect measurements
Masahiro Horita (Kyoto Univ.), Shinya Takashima, Ryo Tanaka, Hideaki Matsuyama, Katsunori Ueno, Masaharu Edo (Fuji Electric), Jun Suda (Kyoto Univ.)
pp. 21 - 25
ED2015-73
Electrical characterization of lightly Si-doped homoepitaxitial n-type GaN studied by Hall-effect measurement
Naoki Sawada (Kyoto Univ.), Tetsuo Narita, Tetsu Kachi, Tsutomu Uesugi (TOYOTA Central R&D Labs.), Masahiro Horita, Jun Suda (Kyoto Univ.)
pp. 27 - 32
ED2015-74
Photoresponse of Homoepitaxial N-type GaN Schottky Barrier Diodes
Takuya Maeda (Kyoto Univ.), Masaya Okada (Sumitomo electric industries,Ltd.), Yoshiyuki Yamamoto, Masaki Ueno (Sumitomo electric industries), Masahiro Horita, Jun Suda (Kyoto Univ.)
pp. 33 - 37
ED2015-75
A high current operation in a 1.6 kV GaN-based trench hybrid-junction diode (THD)
Ryo Kajitani, Hiroyuki Handa, Shinji Ujita, Daisuke Shibata, Masahiro Ogawa, Kenichiro Tanaka, Hidetoshi Ishida, Satoshi Tamura, Masahiro Ishida, Tetsuzo Ueda (Panasonic)
pp. 39 - 42
ED2015-76
[Invited Talk]
Spatio-time-resolved cathodoluminescence studies on Si-doped high AlN mole fraction AlxGa1-xN multiple quantum wells grown on an AlN epitaxial templates
Shigefusa Chichibu (Tohoku U.), Hifdeto Miyake, Kazumasa Hiramatsu (Mie-U)
pp. 43 - 48
ED2015-77
Analysis of radiative and non-radiative lifetimes in GaN using accurate internal-quantum-efficiency values estimated by simultaneous photoluminescence and photo-acoustic measurements
Kohei Kawakami, Takashi Nakano, Atsushi A Yamaguchi (KIT)
pp. 49 - 52
ED2015-78
Determination of internal quantum efficiency in GaN by simultaneous measurements of photoluminescence and photo-acoustic signals
Takashi Nakano, Kouhei Kawakami, Atsushi A. Yamaguchi (KIT)
pp. 53 - 58
ED2015-79
Multi-wavelength excited Raman scattering spectroscopy for InGaN single layers
Ryosuke Ishido, Ryota Ishii, Mitsuru Funato, Yoichi Kawakami (Kyoto Univ.)
pp. 59 - 62
ED2015-80
Plasmonics with Aluminum applied to emission enhancements
Koichi Okamoto, Kazutaka Tateishi, Shun Kawamoto, Haruku Nishida, Kaoru Tamada (Kyushu Univ.), Mitsuru Funato, Yoichi Kawakami (Kyoto Univ.)
pp. 63 - 68
ED2015-81
Temperature-controlled atomic layer deposition of GaN using plasma-excited nitrogen source
P.Pungboon Pansila, Kensaku Kanomata, Bashir Ahammad, Shigeru Kubota, Fumihiko Hirose (Yamagata Univ)
pp. 69 - 72
ED2015-82
Interface states and device characteristics of AlGaN/GaN MIS-HEMTs with HfO2 fabricated by atomic layer deposition
Gosuke Nishino, Toshiharu Kubo, Takashi Egawa (NITech)
pp. 73 - 76
ED2015-83
Dependence of the initial AlN layer of the vertical direction leakage current of the AlGaN/GaN HEMT structure on Silicon substrate
Yuya Yamaoka (TNSC), Kazuhiro Ito (NITech), Akinori Ubukata, Toshiya Tabuchi, Koh Matsumoto (TNSC), Takashi Egawa (NITech)
pp. 77 - 80
ED2015-84
Recent progress of GaN-based Terahertz Quantum Cascade Lasers
Wataru Terashima, Hideki Hirayama (RIKEN)
pp. 81 - 84
ED2015-85
High-temperature growth of a-AlGaN/AlN and its optical properties
Masafumi Jo, Hideki Hirayama (RIKEN)
pp. 85 - 88
ED2015-86
Growth and optical properties of semi-polar AlGaN/AlN layers grown on m-plane sapphire substrates
Issei Oshima (Saitama Univ./RIKEN), Masafumi Jo, Noritoshi Maeda (RIKEN), Norihiko Kamata (Saitama Univ.), Hideki Hirayama (RIKEN)
pp. 89 - 93
ED2015-87
Improved Properties in InGaN-based Solar Cells by surface passivation process.
Kabata, Tsutsumi Tatsuya, Miyoshi Makoto, Egawa Takashi (Nagoya Inst of Tech)
pp. 95 - 99
ED2015-88
Evaluation of the bonding interface of multi-junction solar cell according to smart stack technology
Shoichiro Nonaka, Akio Furukawa (Tokyo Univ. of Science), Kikuo Makita, Hidenori Mizuno, Takeyoshi Sugaya, Shigeru Niki (AIST)
pp. 101 - 104
ED2015-89
Effects of annealing on the electrical characteristics of GaAs/GaAs junctions
Li Chai, Jianbo Liang, Naoteru Shigekawa (Osaka City Univ.)
pp. 105 - 110
ED2015-90
Electrical characteristics of Si/SiC junctions using surface activated bonding
Tomohiro Hayashi, Jianbo Liang (Osaka City Univ.), Manabu Arai (New Japan Radio Co.), Naoteru Shigekawa (Osaka City Univ.)
pp. 111 - 115
Note: Each article is a technical report without peer review, and its polished version will be published elsewhere.