IEICE Technical Report

Print edition: ISSN 0913-5685      Online edition: ISSN 2432-6380

Volume 117, Number 411

Electronic Information Displays

Workshop Date : 2018-01-25 - 2018-01-26 / Issue Date : 2018-01-18

[PREV] [NEXT]

[TOP] | [2014] | [2015] | [2016] | [2017] | [2018] | [2019] | [2020] | [Japanese] / [English]

[PROGRAM] [BULK PDF DOWNLOAD]


Table of contents

EID2017-30
Thin Film Formation Mechanism of Hexagonal Boron Nitride on c-Plane Sapphire Substrates by Low Pressure CVD
Takumi Kawarazaki, Naoki Umehara, Tomoyasu Nakama, Hiroko Kominami, Kazuhiko Hara (Shizuoka Univ.)
pp. 1 - 4

EID2017-31
Luminescence characteristics of GaN films grown by chemical vapor deposition using Ga vapor
Yuichiro Masuda, Tsuyoshi Nagase, Wataru Kunieda, Tetsuya Kouno, Hiroko Kominami, Kazuhiko Hara (Shizuoka Univ.)
pp. 5 - 8

EID2017-32
Relationship between evaporation rate and thickness distribution under organic thin film preparation
Satoru Kubota, Hiroko Kominami, Kazuhiko Hara, Yoichiro Nakanishi (Shizuoka Univ.), Shozo Matsumoto, Yoichi Aoshima (ALS Technol.)
pp. 9 - 12

EID2017-33
Luminescent properties of ultraviolet emitting zinc aluminate alloy phosphor
Taiga Matsuura, Hiroko Kominami, Youichiro Nakanishi, Kazuhiko Hara (Shizuoka Univ.)
pp. 13 - 16

EID2017-34
Confirmation of DC-EL having carrier injection luminescence
Takatoshi Nishiguchi, Yuchi Onishi, Noboru Miura (Meiji Univ.)
pp. 17 - 20

EID2017-35
Luminescence Properties of Powder EL Devices Having ZnS:Mn Fine Particle
Kunitoshi Yanagihara, Daiki Kobayashi, Noboru Miura (Meiji Univ.)
pp. 21 - 24

EID2017-36
Fabrication of Organic Semiconductor Thin Film on Molecular Orientation Insulating Film and Its Effect on TFT Characteristics
Shigeru Okimoto, Yasufumi Iimura (Tokyo Univ. of A&T), Ryuzou Ohno (JSR)
pp. 25 - 28

EID2017-37
ZnS:Cu dispersive type EL devices prepared by liquid phase reaction method
Shohei Ueda, Satoshi Tanaka, Kouki Saruta, Tadashi Ishigaki, Koutoku Ohmi (Tottori Univ.)
pp. 49 - 52

EID2017-38
Reduction of driving voltage in ZnS:Cu dispersive type EL devices -- Electric field concentration effect by whisker-shaped ZnO particles --
Ryo Nagayama, Daichi Kaneda, Tadashi Ishigaki, Koutoku Ohmi (Tottori Univ.)
pp. 53 - 56

EID2017-39
Current injection type EL devices using CuAlS2:Mn phosphor thin films -- Characteristics of phosphor thin films and EL devices prepared on ITO, ZnO, and ZnS --
Shota Hayashi, Shogo Ueda, Tadashi Ishigaki, Koutoku Ohmi (Tottori Univ.)
pp. 57 - 60

EID2017-40
Evaluation of photoluminescence and photoacoustic characteristics in Bi-activated oxide phosphors
Kosuke Sakuma, Yuta Shimooki, Yuki Yoshimoto, Shota Yokka, Haruki Fukada, Athushi A Yamaguchi (Kanazawa Inst. of Tech.)
pp. 61 - 64

EID2017-41
Liquid Crystal Devices Having the V-Groove Structure by Nano-Imprint Lithography
Kota Haruna, Hiroyuki Okada (Univ. of Toyama)
pp. 65 - 68

EID2017-42
Improvement of Organic Multi-function Diodes Based on Rubrene/PTCDI-C13 Stack
Masahiro Yamada, Masahiro Morimoto, Shigeki Naka, Hiroyuki Okada (Univ. of Toyama)
pp. 69 - 72

EID2017-43
Power Saving of OLEDs by Dimming Background Region Image Extracted Based on Color Similarity in Game Image
Jumpei Sugai, Tomokazu Shiga (UEC)
pp. 73 - 76

Note: Each article is a technical report without peer review, and its polished version will be published elsewhere.


The Institute of Electronics, Information and Communication Engineers (IEICE), Japan