Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380
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SDM2017-91
[Invited Talk]
Perspective of Negative Capacitance FinFETs Investigated by Transient TCAD Simulation
Hiroyuki Ota, Shinji Mgita, Tsutomu Ikegami, Junichi Hattori, Hidehiro Asai, Koichi Fukuda (AIST), Akira Toriumi (The Univ. of Tokyo)
pp. 1 - 4
SDM2017-92
[Invited Talk]
Proposal and demonstration of oxide-semiconductor/(Si, SiGe, Ge) bilayer tunneling field effect transistor with type-II energy band alignment
Kimihiko Kato, Hiroaki Matsui, Hitoshi Tabata, Mitsuru Takenaka, Shinichi Takagi (Univ. of Tokyo)
pp. 5 - 8
SDM2017-93
[Invited Talk]
Lateral Charge Migration Suppression Technique of 3D-NAND Flash by Vth Nearing
Kyoji Mizoguchi, Shohei Kotaki, Yoshiaki Deguchi, Ken Takeuchi (Chuo Univ.)
pp. 9 - 12
SDM2017-94
[Invited Talk]
Reliability and Scalability of FinFET Split-Gate MONOS Array with Tight Vth Distribution for 16/14nm-node Embedded Flash
Shibun Tsuda, Tomoya Saito, Hirokazu Nagase, Yoshiyuki Kawashima, Atsushi Yoshitomi, Shinobu Okanishi, Tomohiro Hayashi, Takuya Maruyama, Masao Inoue, Seiji Muranaka, Shigeki Kato, Takuya Hagiwara, Hirokazu Saito, Tadashi Yamaguchi, Masaru Kadoshima, Takahiro Maruyama, Tatsuyoshi Mihara, Hiroshi Yanagita, Kenichiro Sonoda, Tomohiro Yamashita, Yasuo Yamaguchi (renesas)
pp. 13 - 16
SDM2017-95
[Invited Talk]
STDP synapse with outstanding stability based on a novel insulator-to-metal transition FET
Pablo Stoliar (nanoGUNE), Alejandro Schulman, Ai Kitoh, Akihito Sawa, Isao H. Inoue (AIST)
pp. 17 - 20
SDM2017-96
[Invited Talk]
Sub-nm EOT Ferroelectric HfO2 on p+Ge with Highly Reliable Field Cycling Properties
Xuan Tian, Lun Xu, Shigehisa Shibayama, Tomonori Nishimura, Takeaki Yajima (Univ. of Tokyo), Shinji Migita (AIST), Akira Toriumi (Univ. of Tokyo)
pp. 21 - 24
Note: Each article is a technical report without peer review, and its polished version will be published elsewhere.