Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380
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ED2018-32
Fabrication and optical anisotropy of GaN/AlN ultra-thin quantum wells
Mitsuru Funato, Shuhei Ichikawa, Yoichi Kawakami (Kyoto Univ.)
pp. 1 - 4
ED2018-33
Growth of epitaxial AlInN films on c-plane GaN and the relationship between their alloy compositions and microstructures
Mizuki Yamanaka, Makoto Miyoshi, Takashi Egawa (Nagoya Inst. Tech), Tetsuya Takeuchi (Meijo Univ.)
pp. 5 - 8
ED2018-34
Recent progress toward realization of AlGaN deep UV LD
Noritohsi Maeda (RIKEN), Yoichi Yamada (Yamaguchi Univ.), Masafumi Jo, Hideki Hirayama (RIKEN)
pp. 9 - 12
ED2018-35
Improvement of channel mobility in GaN-MOS structure by surface treatment of recessed-GaN and dielectric SiO2 annealing
Yosuke Kajiwara, Aya Shindome, Toshiki Hikosaka, Masahiko Kuraguchi (Toshiba Corp.), Akira Yoshioka (Toshiba Electronic Device & Storage Corp.), Shinya Nunoue (Toshiba Corp.)
pp. 13 - 16
ED2018-36
Scanning internal photoemission microscopy measurements of n-GaN Schottky contacts under applying voltage
Kenji Shiojima, Masataka Maeda (Univ. of Fukui), Tomoyoshi Mishima (Hosei Univ.)
pp. 17 - 20
ED2018-37
Experiment and evaluation for the methods of nanoimprinting moth eye structure
Kenta Hiraga, Shigeru Kubota, Kensaku Kanomata, Bashir Ahmmad, Fumihiko Hirose (Yamagata Univ.)
pp. 21 - 26
ED2018-38
Development and ion absorption characterization of the zeolite films on flexible film using atomic layer deposition
Yoshiharu Mori, Yusuke Noguti, Kensaku Kanomata, Masanori Miura, Bashir A. Arima, Shigeru Kubota, Fumihiko Hirose (Yamagata Univ.)
pp. 27 - 30
ED2018-39
Enhanced efficiency of CdS quantum dot solar cell by photo electrode modification
Yuya Kibata, Masanori Miura, Kensaku Kanomata, Shigeru Kubota, Fumihiko Hirose, Bashir Ahmmad Arima (Yamagata Univ.)
pp. 31 - 33
ED2018-40
Fabrication of FeSxOy thin film by tartaric acid added three-step pulse electrochemical deposition and fabrication of ZnO/FeSxOy heterojunction solar cell
Wen Ji, Masaya Ichimura (NIT)
pp. 35 - 39
ED2018-41
A 2.5-kV-breakdown-voltage AlGaN-channel HFET with a strain-controlled AlGaInN barrier layer
Daiki Hosomi, Keita Furuoka, Heng Chen, Saki Saito, Toshiharu Kubo, Takashi Egawa, Makoto Miyoshi (Nagoya Inst. of Tech.)
pp. 41 - 44
ED2018-42
Effects of annealing ambient on electrical properties of ALD-Al2O3/AlGaN/GaN MIS-HEMTs
Keita Furuoka, Toshiharu Kubo, Makoto Miyoshi, Takashi Egawa (Nagoya Inst. of Tech.)
pp. 45 - 48
ED2018-43
Chemical Bath Deposition of Undoped and Li Doped CuO Films and Thier Structural and Electrical Properties
Hideyuki Okada, Tomoaki Terasako, Kenji Gochoh, Naoya Hayashimoto (Ehime Univ.)
pp. 49 - 54
ED2018-44
Chemical Bath Deposition of ZnO Nanorods on GZO Seed Layers and Formation of PEDOT:PSS/ZnO Nanorods Heterojunctions
Shohei Obara, Tomoaki Terasako, Suguru Namba, Naoto Hshikuni (Ehime Univ.), Masakazu Yagi (Natl. Inst. Technol., Kagawa Coll.), Junichi Nomoto, Tetsuya Yamamoto (Kochi Univ. Tech.)
pp. 55 - 60
ED2018-45
Fabrication of p-NiO/n-ZnO transparent solar cells by electrochemical deposition
Miki Koyama, Masaya Ichimura (NIT)
pp. 61 - 64
ED2018-46
Fabrication and evaluation of p-type Cu-AlOx thin film by photochemical deposition method
Masanari Umemura, Masaya Ichimura (Nagoya Inst. Tech.)
pp. 65 - 70
ED2018-47
GaN-based verticalcavity surfaceemitting lasers with buried SiO2 optical waveguide structures
Iida Ryosuke (Meijo Univ.), Natsumi Hayashi, Wataru Muranaga, Syo Iwayama, Tetsuya Takeuchi, Satoshi Kamiyama, Motoaki Iwaya (Meijo Univ.), Isamu Akasaki (Meijo Univ./Nagoya Univ.)
pp. 71 - 74
ED2018-48
Theoretical and Experimental Studies on Potential Fluctuation in InGaN Quantum-Well Structures
Takashi Fujita, Shigeta Sakai, Yuma Ikeda, Atsushi A. Yamaguchi (Kanazawa Inst. Tech.), Yuya Kanitani, Shigetaka Tomiya (Sony)
pp. 75 - 78
ED2018-49
A new method to evaluate the degree of potential fluctuation in InGaN quantum-well laser diodes by optical-pump stimulated-emission measurements
Itsuki Oshima, Yuma Ikeda, Shigeta Sakai, A. A. Yamaguchi (Kanazawa Inst. tec.), Yuya Kanitani, Shigetaka Tomiya (Sony)
pp. 79 - 82
ED2018-50
Quality improvement and characteristic evaluations of sputter-deposited a-plane AlN on r-plane sapphire
Ryo Fukuta, Kanako Shojiki, Jiang Nan, Kenjiro Uesugi, Yusuke Hayashi, Xiao Shiyu, Hideto Miyake (Mie Univ.)
pp. 83 - 86
ED2018-51
Recent Progress towards realizing GaN/AlGaN Quantum Cascade Lasers
Ke Wang, Li Wang, Lin Tsung Tse, Hideki Hirayama (RIKEN)
pp. 87 - 90
ED2018-52
Formation of holes in GaN by MOVPE for realization of photonic-crystal lasers
Tomoaki Koizumi, Kei Emoto (Stanley Electric CO., LTD.), Kenji Ishizaki, De Zoysa Menaka, Yochinori Tanaka (Kyoto Univ.), Junichi Sonoda (Stanley Electric CO., LTD.), Susumu Noda (Kyoto Univ.)
pp. 91 - 94
Note: Each article is a technical report without peer review, and its polished version will be published elsewhere.