IEICE Technical Report

Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380

Silicon Device and Materials

Workshop Date : 2019-02-07 / Issue Date : 2019-01-31

SDM2018-91
[Invited Talk] Half pitch 14 nm direct pattering with Nanoimprint lithography
Tetsuro Nakasugi (Toshiba Memory)
pp. 1 - 4

SDM2018-92
[Invited Talk] Ultrafine 3D Interconnect Technology Using Directed Self-Assembly
Takafumi Fukushima, Murugesan Mariappan, Mitsumasa Koyanagi (Tohoku Univ.)
pp. 5 - 8

SDM2018-93
[Invited Talk] Stress Investigation of Annular-Trench-Isolated (ATI) Through Silicon Via (TSV)
Wei Feng, Naoya Watanabe, Haruo Shimamoto, Masahiro Aoyagi, Katsuya Kikuchi (AIST)
pp. 9 - 14

SDM2018-94
[Invited Talk] Grain-Boundary-Crystallinity Dependence of Mechanical Properties and EM Resistance of Electroplated Copper Interconnections
Yifan Luo, Yutaro Nakoshi, Ryota Mizuno, Ken Suzuki, Hideo Miura (Tohoku Univ.)
pp. 15 - 18

SDM2018-95
[Invited Talk] Single Crystal Al Interconnects formed on p-GaN and their Application to GaN FET
Takeshi Harada, Koji Utaka, Yusuke Kand, Katsuhiko Onishi, Keiichi Matsunaga, Masahiro Hikita, Yasuhiro Uemoto (Panasonic)
pp. 19 - 22

SDM2018-96
[Invited Talk] New contact material for advanced CMOS: cluster-preforming-deposited amorphous Si-rich W silicide film
Naoya Okada, Noriyuki Uchida, Shinichi Ogawa, Toshihiko Kanayama (AIST)
pp. 23 - 26

SDM2018-97
[Invited Talk] Fabrication of substrates with smooth Au surface for bonding at room temperature in atmospheric air
Takashi Matsumae, Michitaka Yamamoto, Yuichi Kurashima, Eiji Higurashi, Hideki Takagi (AIST)
pp. 27 - 30

Note: Each article is a technical report without peer review, and its polished version will be published elsewhere.

The Institute of Electronics, Information and Communication Engineers (IEICE), Japan