Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380
[TOP] | [2016] | [2017] | [2018] | [2019] | [2020] | [2021] | [2022] | [Japanese] / [English]
SDM2019-68
[Invited Talk]
2019 SISPAD Review
Yoshinari Kamakura (OIT)
pp. 1 - 3
SDM2019-69
[Invited Talk]
Study on the scalability of ferroelectric HfO2 tunnel junction memory
Masaharu Kobayashi, Fei Mo, Yusaku Tagawa, Takuya Saraya, Toshiro Hiramoto (Univ. Tokyo)
pp. 5 - 8
SDM2019-70
[Invited Talk]
Understanding the interface in 2D layered transistors
Kosuke Nagashio (UTokyo)
pp. 9 - 10
SDM2019-71
[Invited Talk]
Surface Reaction Analyses for Atomic Scale Processing by Beam Experiments
Kazuhiro Karahashi, Tomoko Ito, Satoshi Hamaguchi (Osaka Univ.)
pp. 11 - 16
SDM2019-72
[Invited Talk]
Compact Modeling Perspective
-- Bridge to Industrial Applications --
Mitiko Miura-Mattausch (HU)
pp. 17 - 20
SDM2019-73
Study of stacked type logic circuit with fabrication technology of 3D flash memory.
-- Design of full adder and low power. --
Fumiya Suzuki, Shigeyoshi Watanabe (Shonan Inst. of Tech.)
pp. 21 - 25
SDM2019-74
[Invited Talk]
Device Simulation of Dynamic Behavior of Ferroelectric Field-Effect Transistors
Junichi Hattori, Tsutomu Ikegami, Koichi Fukuda, Hiroyuki Ota, Shinji Migita, Hidehiro Asai (AIST)
pp. 27 - 32
SDM2019-75
[Invited Talk]
Fundamental Aspects of Semiconductor Device Modeling Associated with Discrete Impurities II
-- Random Dopants under Semiconductor Nano-structures --
Nobuyuki Sano (Univ. Tsukuba)
pp. 33 - 38
SDM2019-76
[Invited Talk]
First-principles molecular dynamics simulations for SiC oxidation processes
Takahisa Ohno (NIMS)
pp. 39 - 44
SDM2019-77
[Invited Talk]
Three-dimensional accurate TCAD simulation of trench-gate Si-IGBTs
Masahiro Watanabe, Naoyuki Shigyo, Takuya Hoshii, Kazuyoshi Furukawa, Kuniyuki Kakushima (Tokyo Tech.), Katsumi Satoh (Mitsubishi Electric Corp.), Tomoko Matsudai (Toshiba Electronic Devices & Storage Corp.), Takuya Saraya, Toshihiko Takakura, Kazuo Itou, Munetoshi Fukui, Shinichi Suzuki, Kiyoshi Takeuchi (The University of Tokyo), Iriya Muneta, Hitoshi Wakabayashi (Tokyo Tech.), Akira Nakajima (AIST), Shin-ichi Nishizawa (Kyushu University, Kasuga), Kazuo Tsutsui (Tokyo Tech.), Toshiro Hiramoto (The University of Tokyo), Hiromichi Ohashi, Hiroshi Iwai (Tokyo Tech.)
pp. 45 - 48
SDM2019-78
[Invited Talk]
Investigation of TCAD Calibration Methods for Saturation and Tail Current of 6.5kV IGBTs
Takeshi Suwa, Shigeaki Hayase (TDSC)
pp. 49 - 54
SDM2019-79
[Invited Talk]
Measurement and Analysis Technologies of RTS Noise Toward Advanced CMOS Image Sensors Development
Rihito Kuroda (Tohoku Univ.)
pp. 55 - 58
Note: Each article is a technical report without peer review, and its polished version will be published elsewhere.