Online edition: ISSN 2432-6380
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SDM2020-14
[Memorial Lecture]
Atomic layer controlled etching process using plasma
Sho Kumakura (Tokyo Electron Miyagi)
pp. 1 - 6
SDM2020-15
High capacitance density high breakdown voltage textured deep trench SiN capacitors toward 3D integration
Koga Saito, Ayano Yoshida, Rihito Kuroda (Tohoku Univ.), Hiroshi Shibata, Taku Shibaguchi, Naoya kuriyama (LAPIS Semiconductor Miyagi), Shigetoshi Sugawa (Tohoku Univ.)
pp. 7 - 11
SDM2020-16
Investigation of N-doped LaB6/LaBxNy/Si(100) MIS structure and floating-gate memory applications
Kyung Eun Park, Hideki Kamata, Shun-ichiro Ohmi (Tokyo Tech)
pp. 12 - 15
SDM2020-17
A two-step wet etching process for the integration of PdEr/HfO2 gate stack structure on the gate-first Schottky barrier MOSFET
Rengie Mark D. Mailig, Yuichiro Aruga, Shun-ichiro Ohmi (Tokyo Tech)
pp. 16 - 19
SDM2020-18
Investigation on millisecond solid phase crystallization of amorphous silicon films induced by micro thermal plasma jet.
Hoa Thi Khanh Nguyen, Hiroaki Hanafusa, Yuri Mizukawa (Hiroshima Univ.), Shohei Hayashi (Toray Res. Cent.), Seiichiro Higashi (Hiroshima Univ.)
pp. 20 - 24
SDM2020-19
Modification of states of copper and copper oxide due to IPA treatment
Takezo Mawaki (Tohoku Univ.), Akinobu Teramoto (Hiroshima Univ.), Katsutoshi Ishii (Tokyo Electron Technology Solutions), Yoshinobu Shiba, Tomoyuki Suwa (Tohoku Univ.), Shuji Azumo, Akira Shimizu, Kota Umezawa (Tokyo Electron Technology Solutions), Rihito Kuroda, Yasuyuki Shirai, Shigetoshi Sugawa (Tohoku Univ.)
pp. 25 - 29
SDM2020-20
Lattice Matching and X-ray Structural Analysis of Ferroelectric Thin Film BiFeO3
Fuminobu Imaizumi, Rikuto Nakada (NIT, Oyama College)
pp. 30 - 33
SDM2020-21
Effect of Drain-to-Source Voltage on Random Telegraph Noise Based on Statistical Analysis
Ryo Akimoto, Rihito Kuroda (Tohoku Univ.), Akinobu Teramoto (Hiroshima Univ.), Takezo Mawaki, Shinya Ichino, Tomoyuki Suwa, Shigetoshi Sugawa (Tohoku Univ.)
pp. 34 - 39
Note: Each article is a technical report without peer review, and its polished version will be published elsewhere.