Online edition: ISSN 2432-6380
[TOP] | [2017] | [2018] | [2019] | [2020] | [2021] | [2022] | [2023] | [Japanese] / [English]
SDM2020-35
Automation of characteristic measurement of amorphous oxide semiconductor memristors and their effects
Ryo Sumida, Ayata Kurasaki, Mutumi Kimura (RU)
pp. 1 - 4
SDM2020-36
Biological environment imitation experiment of artificial retina using thin film device
Naoya Naito, Kouhei Toyoda (Ryukoku Univ.), Yoshio Okano (WetLab Corporation), Mutsumi Kimura (Ryukoku Univ.)
pp. 5 - 8
SDM2020-37
Characterization of amorphous Ga-Sn-O thin film thermoelectric conversion element
Yuhei Yamamoto, Tatuya Aramaki, Ryo Ito, Mutumi Kimura (Ryukoku Univ.)
pp. 9 - 12
SDM2020-38
Stacked cross-point memory of synaptic elements using IGZO thin film
Etsuko Iwagi (RU), Takumi Tsuno (NAIST), Mutsumi Kimura (RU)
pp. 13 - 16
SDM2020-39
Evaluation of dielectric properties of ferroelectric thin films for neural networks
Yuma Ishisaki, Hiroki Umemura, Daiki Matsukawa, Mutsumi Kimura (RU), Eisuke Tokumitsu (JAIST), Kenichi Haga, Toshihiro Doi (MMC)
pp. 17 - 20
SDM2020-40
Investigation of oxide semiconductor thin film synapse using STDP learning method
Tetsuya Katagiri, Daiki Yamakawa, Kenta Yatida, Kazuki Morigaki, Mutsumi Kimura (Ryukoku Univ.)
pp. 21 - 24
SDM2020-41
Brain type system using IGZO thin film synapses
Yuki Onishi, Yuki Shibayama, Daiki Yamakawa (Ryukoku Univ.), Hiroya Ikeda, Yasuhiko Nakajima (NAIST), Mutumi Kimura (Ryukoku Univ./NAIST)
pp. 25 - 28
SDM2020-42
Synthesis of Single Crystal BaTiO3 Nanoparticles for Self-Assembly Technique
Misa Yamasaki, Masaki Yamaguchi (Shibaura Inst. of Tech.)
pp. 29 - 34
SDM2020-43
Improvement of Al2O3/GaN MOS Characteristics using Bilayer Structure
Sho Sonehara, Mutsunori Uenuma, Yukiharu Uraoka (NAIST)
pp. 35 - 36
SDM2020-44
[Special Invited Talk]
Defects control in oxide semiconductors at low-temperature and its application to flexible devices
Yusaku Magari, Mamoru Furuta (Kochi Univ. of Technol.)
pp. 37 - 41
SDM2020-45
Coexistence of digital and analog resistive switching in Ta2O5-based ReRAM cells with TiN electrodes.
Kazutaka Yamada, Tsunenobu Kimoto (Kyoto Univ.), Yusuke Nishi (Kyoto Univ./NIT, Maizuru College)
pp. 42 - 45
SDM2020-46
Optimization of double-layered ReRAM using Ga-Sn-O thin film
Ayata Kurasaki, Kaito Hashimoto, Ryo Sumida, Shihori Akane, Daisuke Makioka, Sumio Sugisaki, Mutsumi Kimura (Ryukoku Univ.)
pp. 46 - 49
SDM2020-47
Phase Change Random Access memory using Cu2GeTe3
Shihori Akane (Ryukoku Univ), Isao Horiuchi (KOA Corp), Mutsumi Kimura (Ryukoku Univ)
pp. 50 - 53
SDM2020-48
Ferroelectric gate thin film transistor using oxide semiconductor Ga-Sn-O
Tomoki Fukui, Kouki Nakagawa, Mutsumi Kimura (Ryukoku Univ)
pp. 54 - 57
Note: Each article is a technical report without peer review, and its polished version will be published elsewhere.