IEICE Technical Report

Online edition: ISSN 2432-6380

Volume 120, Number 359

Silicon Device and Materials

Workshop Date : 2021-02-05 / Issue Date : 2021-01-29

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Table of contents

SDM2020-55
[Invited Talk] Ru Area Selective Metal Capping and Wafer Surface Condition Control for sub-30nm Pitch Cu Damascene Interconnect
Hirokazu Aizawa, Kaoru Maekawa, Kai-Hung Yu, Gyana Pattanaik, Gert Leusink (TTCA)
pp. 1 - 6

SDM2020-56
Characteristic properties of Co-Zr alloy as a single-layer barrier
Yuki Yamada, Masataka Yahagi, Junichi Koike (Tohoku Univ.)
pp. 7 - 10

SDM2020-57
Limitation of barrier property of ultra-thin TaN film
Toshihiro Kuge, Masataka Yahagi, Junichi Koike (Tohoku Univ.)
pp. 11 - 14

SDM2020-58
[Invited Talk] Impacts of Misalignment on 1um Pitch Cu-Cu Hybrid Bonding
Yoshihisa Kagawa, Takumi Kamibayashi, Masaki Haneda, Nobuotoshi Fujii, Syunsuke Furuse, Hideto Hashiguch, Tomoyuki Hirano, Hayato Iwamoto (SSS)
pp. 15 - 18

SDM2020-59
[Invited Talk] AI for material, material for AI
Shintaro Yamamichi (IBM Japan)
pp. 19 - 22

SDM2020-60
[Invited Talk] R&D of 3D-IC Technology in the era of AI, IoT, Big data
Katsuya Kikuchi (AIST)
pp. 23 - 26

SDM2020-61
[Invited Talk] Bumpless Build Cube (BBCube) using Wafer-on-Wafer (WOW) Technology with 3D Redundancy Scheme
Shinji Sugatani, Norio Chujo, Koji Sakui, Hiroyuki Ryoson, Tomoji Nakamura, Takayuki Ohba (Titech)
pp. 27 - 32

Note: Each article is a technical report without peer review, and its polished version will be published elsewhere.

The Institute of Electronics, Information and Communication Engineers (IEICE), Japan