Online edition: ISSN 2432-6380
[TOP] | [2018] | [2019] | [2020] | [2021] | [2022] | [2023] | [2024] | [Japanese] / [English]
SDM2021-22
[Memorial Lecture]
Modification of states of metal copper and copper oxide due to isopropyl alcohol treatment
Takezo Mawaki (Tohoku Univ.), Akinobu Teramoto (Hiroshima Univ.), Katsutoshi Ishii (Tokyo Electron Technology Solutions), Yoshinobu Shiba, Tomoyuki Suwa (Tohoku Univ.), Shuji Azumo, Akira Shimizu, Kota Umezawa (Tokyo Electron Technology Solutions), Rihito Kuroda, Yasuyuki Shirai, Shigetoshi Sugawa (Tohoku Univ.)
pp. 1 - 6
SDM2021-23
[Memorial Lecture]
Operation mechanism of Si/HZO ferroelectric FETs
-- Role of MOS (MFS) interface --
Kasidit Toprasertpong, Tsung-En Lee, Zaoyang Lin, Kento Tahara, Kouhei Watanabe, Mitsuru Takenaka, Shinichi Takagi (Univ. Tokyo)
pp. 7 - 12
SDM2021-24
[Invited Lecture]
FET characteristics with 2D channel
Hitoshi Wakabayashi (Tokyo Tech)
pp. 13 - 15
SDM2021-25
[Invited Lecture]
Development of TFET-based qubits enabling high-temperature operation to realize silicon-based quantum computing
Takahiro Mori (AIST)
p. 16
SDM2021-26
[Invited Lecture]
For understanding ferroelectric HfO2 toward its device applications
Akira Toriumi
pp. 17 - 20
SDM2021-27
Application-induced TaOx ReRAM Cell Reliability Variation Tolerated High-speed Storage
Chihiro Matsui, Ken Takeuchi (Univ. Tokyo)
pp. 21 - 22
SDM2021-28
Influence of quantized bit precision and bit-error rate in Computation-in-Memory with ReRAM on optimal answers of combinatorial optimization problems
Naoko Misawa, Kenta Taoka, Shunsuke Koshino, Chihiro Matsui, Ken Takeuchi (Univ. Tokyo)
pp. 23 - 26
SDM2021-29
Formation and Thickness Control of Ultrathin Ge Layer on Al and Ag/(111) Structures by Thermal Anneal
Akio Ohta, Keigo Matsushita, Noriyuki Taoka, Katsunori Makihara, Seiichi Miyazaki (Nagoya Univ.)
pp. 27 - 31
Note: Each article is a technical report without peer review, and its polished version will be published elsewhere.