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Paper Abstract and Keywords
Presentation 2006-08-07 15:25
Low temperature deposition of anatase poly TiO2 by chemical vapor deposition
Fumihiko Hirose, Masashi Ito, Yu Matsushima (YU)
Abstract (in Japanese) (See Japanese page) 
(in English) We have successfully deposited antase TiO2 on Si surfaces by MOCVD with a precursor titaneisopropoxide and an oxidant of H2O2 vapor. The typical growth rate is 17A/s. The grown TiO2 exhibited photocatalytic activity.
Keyword (in Japanese) (See Japanese page) 
(in English) TiO2 / CVD / low temperature / crystal / photocatalytist / / /  
Reference Info. IEICE Tech. Rep., vol. 106, no. 203, CPM2006-44, pp. 21-23, Aug. 2006.
Paper # CPM2006-44 
Date of Issue 2006-07-31 (CPM) 
ISSN Print edition: ISSN 0913-5685
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Conference Information
Committee CPM  
Conference Date 2006-08-07 - 2006-08-08 
Place (in Japanese) (See Japanese page) 
Place (in English) Iwate Univ. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Electronic Component Parts and Materials, etc. 
Paper Information
Registration To CPM 
Conference Code 2006-08-CPM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Low temperature deposition of anatase poly TiO2 by chemical vapor deposition 
Sub Title (in English)  
Keyword(1) TiO2  
Keyword(2) CVD  
Keyword(3) low temperature  
Keyword(4) crystal  
Keyword(5) photocatalytist  
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1st Author's Name Fumihiko Hirose  
1st Author's Affiliation Ymagata University (YU)
2nd Author's Name Masashi Ito  
2nd Author's Affiliation Ymagata University (YU)
3rd Author's Name Yu Matsushima  
3rd Author's Affiliation Ymagata University (YU)
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Speaker Author-1 
Date Time 2006-08-07 15:25:00 
Presentation Time 25 minutes 
Registration for CPM 
Paper # CPM2006-44 
Volume (vol) vol.106 
Number (no) no.203 
Page pp.21-23 
#Pages 3 
Date of Issue 2006-07-31 (CPM) 

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