Information: Join today and make your research activities more affordable! Technical workshop participation fees and annual registration fees are available at member rates.
Notice: [Important] Announcement of Changes to Registration Fee Payment and Manuscript Upload Procedures for IEICE Technical Meetings[Type 1 Only]
IEICE Technical Committee Submission System
Conference Paper's Information		 Online Proceedings
[Sign in]
Tech. Rep. Archives
 Go Top Page Go Previous   [Japanese] / [English] 

Paper Abstract and Keywords
Presentation 2012-05-18 11:15
Characterization of recombination centers in p-type 4H-SiC induced by low-energy electron irradiation
Kazuki Yoshihara, Masashi Kato, Masaya Ichimura (NIT), Tomoaki Hatayama (NAIST), Takeshi Ohshima (JAEA) ED2012-31 CPM2012-15 SDM2012-33
Abstract (in Japanese) (See Japanese page) 
(in English) Silicon carbide (SiC) is a promising material for high power devices with low energy loss. However we have never completely understood crystal defects in SiC which influence on device performance, therefore we need to study for crystal defects. Although studies for deep-levels in p-type 4H-SiC have been reported, deep-levels acting as recombination centers have been seldom reported. In this work, we have measured deep-levels in (0001) Si face epitaxial p-type 4H-SiC layers with the current deep-level transient spectroscopy (I-DLTS) method. A part of the samples were irradiated by electrons in order to introduce defects. As a result, we found electron irradiation to p-type 4H-SiC would create complex defects behaving as recombination centers rather than the carbon vacancy.
Keyword (in Japanese) (See Japanese page) 
(in English) 4H-SiC / I-DLTS / deep-level / electron irradiation / carbon vacancy / / /  
Reference Info. IEICE Tech. Rep., vol. 112, no. 33, CPM2012-15, pp. 67-72, May 2012.
Paper # CPM2012-15 
Date of Issue 2012-05-10 (ED, CPM, SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2012-31 CPM2012-15 SDM2012-33

Conference Information
Committee ED SDM CPM  
Conference Date 2012-05-17 - 2012-05-18 
Place (in Japanese) (See Japanese page) 
Place (in English) VBL, Toyohashi Univ. of Technol. 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To CPM 
Conference Code 2012-05-ED-SDM-CPM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Characterization of recombination centers in p-type 4H-SiC induced by low-energy electron irradiation 
Sub Title (in English)  
Keyword(1) 4H-SiC  
Keyword(2) I-DLTS  
Keyword(3) deep-level  
Keyword(4) electron irradiation  
Keyword(5) carbon vacancy  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Kazuki Yoshihara  
1st Author's Affiliation Nagoya Institute of Technology (NIT)
2nd Author's Name Masashi Kato  
2nd Author's Affiliation Nagoya Institute of Technology (NIT)
3rd Author's Name Masaya Ichimura  
3rd Author's Affiliation Nagoya Institute of Technology (NIT)
4th Author's Name Tomoaki Hatayama  
4th Author's Affiliation Nara Institute of Science and Technology (NAIST)
5th Author's Name Takeshi Ohshima  
5th Author's Affiliation Japan Atomic Energy Agency (JAEA)
6th Author's Name  
6th Author's Affiliation ()
7th Author's Name  
7th Author's Affiliation ()
8th Author's Name  
8th Author's Affiliation ()
9th Author's Name  
9th Author's Affiliation ()
10th Author's Name  
10th Author's Affiliation ()
11th Author's Name  
11th Author's Affiliation ()
12th Author's Name  
12th Author's Affiliation ()
13th Author's Name  
13th Author's Affiliation ()
14th Author's Name  
14th Author's Affiliation ()
15th Author's Name  
15th Author's Affiliation ()
16th Author's Name  
16th Author's Affiliation ()
17th Author's Name  
17th Author's Affiliation ()
18th Author's Name  
18th Author's Affiliation ()
19th Author's Name  
19th Author's Affiliation ()
20th Author's Name  
20th Author's Affiliation ()
21st Author's Name  
21st Author's Affiliation ()
22nd Author's Name  
22nd Author's Affiliation ()
23rd Author's Name  
23rd Author's Affiliation ()
24th Author's Name  
24th Author's Affiliation ()
25th Author's Name  
25th Author's Affiliation ()
26th Author's Name / /
26th Author's Affiliation ()
()
27th Author's Name / /
27th Author's Affiliation ()
()
28th Author's Name / /
28th Author's Affiliation ()
()
29th Author's Name / /
29th Author's Affiliation ()
()
30th Author's Name / /
30th Author's Affiliation ()
()
31st Author's Name / /
31st Author's Affiliation ()
()
32nd Author's Name / /
32nd Author's Affiliation ()
()
33rd Author's Name / /
33rd Author's Affiliation ()
()
34th Author's Name / /
34th Author's Affiliation ()
()
35th Author's Name / /
35th Author's Affiliation ()
()
36th Author's Name / /
36th Author's Affiliation ()
()
Speaker Author-1 
Date Time 2012-05-18 11:15:00 
Presentation Time 25 minutes 
Registration for CPM 
Paper # ED2012-31, CPM2012-15, SDM2012-33 
Volume (vol) vol.112 
Number (no) no.32(ED), no.33(CPM), no.34(SDM) 
Page pp.67-72 
#Pages 6 
Date of Issue 2012-05-10 (ED, CPM, SDM) 

[Return to Top Page]

[Return to IEICE Web Page]

(Line Height for English Pages: 1)
The Institute of Electronics, Information and Communication Engineers (IEICE), Japan