| Paper Abstract and Keywords |
| Presentation |
2012-05-18 13:50
H2O2 treatment of the Cu2O thin films deposited by the electrochemical method Ying Song, Masaya Ichimura (Nagoya Inst. of Tech.) ED2012-35 CPM2012-19 SDM2012-37 |
| Abstract |
(in Japanese) |
(See Japanese page) |
| (in English) |
Cu2O is considered to be promising as an absorber layer material of solar cells, but its band gap is larger than the optimum one. Therefore, we attempted to oxidize Cu2O using H2O2 to increase oxygen ratio and decrease band gap. Cu2O thin films were deposited on indium-tin-oxide-coated glass from an aqueous solution containing CuSO4, lactic acid and KOH by the galvanostatic electrochemical deposition at 40ºC with current density of -1mA/cm2. Then, the as-prepared copper oxide thin film was dipped in H2O2 (30%) at 90ºC to oxidize for 10, 20 or 30 minutes. By the H2O2 treatment, the oxygen content was increased, and the band gap was decreased. |
| Keyword |
(in Japanese) |
(See Japanese page) |
| (in English) |
Cu2O thin film / H2O2 treatment / photo-absorption / composition ratio / / / / |
| Reference Info. |
IEICE Tech. Rep., vol. 112, no. 33, CPM2012-19, pp. 91-94, May 2012. |
| Paper # |
CPM2012-19 |
| Date of Issue |
2012-05-10 (ED, CPM, SDM) |
| ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
| Download PDF |
ED2012-35 CPM2012-19 SDM2012-37 |
| Conference Information |
| Committee |
ED SDM CPM |
| Conference Date |
2012-05-17 - 2012-05-18 |
| Place (in Japanese) |
(See Japanese page) |
| Place (in English) |
VBL, Toyohashi Univ. of Technol. |
| Topics (in Japanese) |
(See Japanese page) |
| Topics (in English) |
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| Paper Information |
| Registration To |
CPM |
| Conference Code |
2012-05-ED-SDM-CPM |
| Language |
Japanese |
| Title (in Japanese) |
(See Japanese page) |
| Sub Title (in Japanese) |
(See Japanese page) |
| Title (in English) |
H2O2 treatment of the Cu2O thin films deposited by the electrochemical method |
| Sub Title (in English) |
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| Keyword(1) |
Cu2O thin film |
| Keyword(2) |
H2O2 treatment |
| Keyword(3) |
photo-absorption |
| Keyword(4) |
composition ratio |
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| 1st Author's Name |
Ying Song |
| 1st Author's Affiliation |
Nagoya Institute of Technology (Nagoya Inst. of Tech.) |
| 2nd Author's Name |
Masaya Ichimura |
| 2nd Author's Affiliation |
Nagoya Institute of Technology (Nagoya Inst. of Tech.) |
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| Speaker |
Author-1 |
| Date Time |
2012-05-18 13:50:00 |
| Presentation Time |
25 minutes |
| Registration for |
CPM |
| Paper # |
ED2012-35, CPM2012-19, SDM2012-37 |
| Volume (vol) |
vol.112 |
| Number (no) |
no.32(ED), no.33(CPM), no.34(SDM) |
| Page |
pp.91-94 |
| #Pages |
4 |
| Date of Issue |
2012-05-10 (ED, CPM, SDM) |