| Paper Abstract and Keywords |
| Presentation |
2012-05-18 13:25
Electrodeposition of Ga2O3 Thin Films from Aqueous Gallium Sulfate Solutions Junie Jhon M. Vequizo, Masaya Ichimura (Nagoya Inst. of Tech.) ED2012-34 CPM2012-18 SDM2012-36 |
| Abstract |
(in Japanese) |
(See Japanese page) |
| (in English) |
Gallium oxide (Ga2O3) thin films were prepared by employing facile electrodeposition technique from aqueous gallium sulfate solution with small amount of Na2S2O3 and H2O2. Effects of different deposition parameters such as deposition voltage, amount of H2O2 and deposition time were investigated and presented in this report. Sulfur peak could appear in the Auger electron spectroscopy (AES) spectra of the films deposited using Ga2(SO4)3-Na2S2O3-H2O2 solution depending on the applied voltage and deposition time. As-deposited films showed oxygen-rich characteristics as evident in the AES result. The films exhibited n-type conductivity and good photosensitivity from photoelectrochemical measurement. |
| Keyword |
(in Japanese) |
(See Japanese page) |
| (in English) |
Gallium oxide / electrodeposition / AES / photoelectrochemical measurement / / / / |
| Reference Info. |
IEICE Tech. Rep., vol. 112, no. 33, CPM2012-18, pp. 85-89, May 2012. |
| Paper # |
CPM2012-18 |
| Date of Issue |
2012-05-10 (ED, CPM, SDM) |
| ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
| Download PDF |
ED2012-34 CPM2012-18 SDM2012-36 |
| Conference Information |
| Committee |
ED SDM CPM |
| Conference Date |
2012-05-17 - 2012-05-18 |
| Place (in Japanese) |
(See Japanese page) |
| Place (in English) |
VBL, Toyohashi Univ. of Technol. |
| Topics (in Japanese) |
(See Japanese page) |
| Topics (in English) |
|
| Paper Information |
| Registration To |
CPM |
| Conference Code |
2012-05-ED-SDM-CPM |
| Language |
English |
| Title (in Japanese) |
(See Japanese page) |
| Sub Title (in Japanese) |
(See Japanese page) |
| Title (in English) |
Electrodeposition of Ga2O3 Thin Films from Aqueous Gallium Sulfate Solutions |
| Sub Title (in English) |
|
| Keyword(1) |
Gallium oxide |
| Keyword(2) |
electrodeposition |
| Keyword(3) |
AES |
| Keyword(4) |
photoelectrochemical measurement |
| Keyword(5) |
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| 1st Author's Name |
Junie Jhon M. Vequizo |
| 1st Author's Affiliation |
Nagoya Institute of Technology (Nagoya Inst. of Tech.) |
| 2nd Author's Name |
Masaya Ichimura |
| 2nd Author's Affiliation |
Nagoya Institute of Technology (Nagoya Inst. of Tech.) |
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| Speaker |
Author-1 |
| Date Time |
2012-05-18 13:25:00 |
| Presentation Time |
25 minutes |
| Registration for |
CPM |
| Paper # |
ED2012-34, CPM2012-18, SDM2012-36 |
| Volume (vol) |
vol.112 |
| Number (no) |
no.32(ED), no.33(CPM), no.34(SDM) |
| Page |
pp.85-89 |
| #Pages |
5 |
| Date of Issue |
2012-05-10 (ED, CPM, SDM) |