Paper Abstract and Keywords |
Presentation |
2013-06-21 16:55
ZnO film growth using high-energy H2O generated by a catalytic reaction
-- Effect of low-temperature buffer layer -- Kazuki Takezawa, Tomoki Nakamura, Takahiro Oyanagi, Takahiro Kato (Nagaoka Univ. of Tech.), Hironori Katagiri, Koichiro Oishi, Kazuo Jimbo (Nagaoka. Nat. Coll. Technol.), Kanji Yasui (Nagaoka Univ. of Tech.) EMD2013-23 CPM2013-38 OME2013-46 Link to ES Tech. Rep. Archives: EMD2013-23 CPM2013-38 OME2013-46 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
ZnO thin films were grown on glass substrates through a reaction between dimethylzinc and high-energy H2O. The latter was produced by a Pt-catalyzed H2O2 reaction. Although the ZnO films grown on a-sapphire substrates showed excellent electrical properties, those grown on glass substrates showed poor electrical properties. For the application of transparent conductive thin films, the improvement of the optical and electrical properties of the ZnO films on the glass substrates were tried by a insertion of low temperature buffer layer. Although crystal orientation along c-axis was not improved by the buffer layer, Hall mobility was improved. The improvement of the Hall mobility was correlated well with an empirical parameter E0 estimated from the absorption coefficients at sub-bandgap energy. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
ZnO / catalytic reaction / CVD / surface morphology / optical transmittance / Hall mobility / / |
Reference Info. |
IEICE Tech. Rep., vol. 113, no. 97, CPM2013-38, pp. 89-94, June 2013. |
Paper # |
CPM2013-38 |
Date of Issue |
2013-06-14 (EMD, CPM, OME) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
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