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Technical Committee on Component Parts and Materials (CPM) (Searched in: 2013)
Search Results: Keywords 'from:2013-11-28 to:2013-11-28'
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| CPM, LQE, ED | 2013-11-28 10:35 |
Osaka | High-Power Operation and Applications of InGaN Laser Diode Hiroyuki Hagino, Katsuya Samonji, Shinji Yoshida, Shinichi Takigawa, Kiyoshi Morimoto, Toshiyuki Takizawa, Hideki Kasugai, Kazuhiko Yamanaka, Takuma Katayama (Panasonic)  ED2013-64 CPM2013-123 LQE2013-99 |
We have developed the watt-class blue-violet laser diode array for the applications to data projector and automotive lig... [more] | ED2013-64 CPM2013-123 LQE2013-99 pp.1-4 |
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| CPM, LQE, ED | 2013-11-28 11:00 |
Osaka | Texture formation by anisotropic dry etching of m-plane GaN, and light extraction efficiency improvement of textured m-plane GaN LED Toshiyuki Fujita, Atsushi Yamada, Akira Inoue, Ryo Kato, Toshiya Yokokawa (Panasonic) ED2013-65 CPM2013-124 LQE2013-100 |
[more] | ED2013-65 CPM2013-124 LQE2013-100 pp.5-9 |
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| CPM, LQE, ED | 2013-11-28 11:25 |
Osaka | Study on improvement of the light extraction efficiency in 350-nm-emission UV-LED Tsubasa Nakashima, Kenichiro Takeda, Motoaki Iwaya, Satoshi Kamiyama, Tetsuya Takeuchi, Isamu Akasaki (Meijo Univ.), Hiroshi Amano (Nagoya Univ.) ED2013-66 CPM2013-125 LQE2013-101 |
We have aimed to improve the light extraction efficiency by using p- and n- high-reflectivity indium tin oxide /Al elect... [more] | ED2013-66 CPM2013-125 LQE2013-101 pp.11-16 |
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| CPM, LQE, ED | 2013-11-28 11:50 |
Osaka | Bow management of substrate for nitride semiconductor devices by internally focused laser processing
-- application to silicon substrate -- Natsuko Aota, Hideo Aida, Hidetoshi Takeda (Namiki Precision Jewel) ED2013-67 CPM2013-126 LQE2013-102 |
Bow management for heteroepitaxy of III-Nitride films on silicon substrate has been required, as substrate bow is introd... [more] | ED2013-67 CPM2013-126 LQE2013-102 pp.17-20 |
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| CPM, LQE, ED | 2013-11-28 13:30 |
Osaka | Electrical properties of Si/SiC heterojunctions fabricated using surface-activated bonding Shota Nishida, Jianbo Liang, Masashi Morimoto, Naoteru Shigekawa (Osaka City Univ.), Manabu Arai (New Japan Radio) ED2013-68 CPM2013-127 LQE2013-103 |
The physical and electrical properties of p+-Si/n-4H-SiC heterojunctions with and without being annealed fabricated by u... [more] | ED2013-68 CPM2013-127 LQE2013-103 pp.21-25 |
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| CPM, LQE, ED | 2013-11-28 13:55 |
Osaka | Fabrication of Tandem Solar Cells by Using Surface-Activated Bonding Jianbo Liang (Osaka City Univ.), Shota Nishida, Masashi Morimoto, Naoteru Shigekawa (Osaka City University) ED2013-69 CPM2013-128 LQE2013-104 |
[more] | ED2013-69 CPM2013-128 LQE2013-104 pp.27-30 |
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| CPM, LQE, ED | 2013-11-28 14:20 |
Osaka | Investigation on the optimum MQW structure for InGaN/GaN solar cells Noriyuki Watanabe, Manabu Mitsuhara, Haruki Yokoyama (NTT), Jianbo Liang, Naoteru Shigekawa (Osaka City Univ.) ED2013-70 CPM2013-129 LQE2013-105 |
We have investigated InGaN/GaN MQW solar cells on the relationship between short circuit current and the MQW structure. ... [more] | ED2013-70 CPM2013-129 LQE2013-105 pp.31-34 |
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| CPM, LQE, ED | 2013-11-28 14:45 |
Osaka | Characterization of low-carrier thick n-GaN Schottky diodes on GaN free-standing substrates Kenji Shiojima, Yuhei Kihara, Toshichika Aoki (Univ. of Fukui), Naoki Kaneda, Tomoyoshi Mishima (Hitachi Metal) ED2013-71 CPM2013-130 LQE2013-106 |
We fabricated and characterized low-Si-doped thick GaN Schottky diodes on GaN substrates with varied C-doping concentrat... [more] | ED2013-71 CPM2013-130 LQE2013-106 pp.35-38 |
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| CPM, LQE, ED | 2013-11-28 15:10 |
Osaka | AC Operation of Low-Mg-Doped p-GaN Schottky Diodes Kenji Shiojima, Toshichika Aoki (Univ. of Fukui), Naoki Kaneda, Tomoyoshi Mishima (Hitachi Metal) ED2013-72 CPM2013-131 LQE2013-107 |
Current-voltage (I-V) characteristics with variations of voltage sweep speed (vsweep) and changing sweep directions, and... [more] | ED2013-72 CPM2013-131 LQE2013-107 pp.39-42 |
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| CPM, LQE, ED | 2013-11-28 15:50 |
Osaka | Quantum Efficiency of p-GaN with NEA surface for high brightness electron source Takuya Maekawa, Yoshio Honda, Hiroshi Amano, Tomohiro Nishitani (Nagoya Univ.) ED2013-73 CPM2013-132 LQE2013-108 |
We report the lifetime and high brightness condition of the NEA GaN surface for the high brightness and durability of th... [more] | ED2013-73 CPM2013-132 LQE2013-108 pp.43-46 |
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| CPM, LQE, ED | 2013-11-28 16:15 |
Osaka | Study on C doping in GaN and AlGaN by MOVPE Yuya Wakasugi, Yoshio Honda, Hiroshi Amano (Nagoya Univ.) ED2013-74 CPM2013-133 LQE2013-109 |
We grew Mg/C co-doped GaN and AlGaN by MOVPE for identifying the C level in GaN and AlGaN. We measured electrical and op... [more] | ED2013-74 CPM2013-133 LQE2013-109 pp.47-50 |
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| CPM, LQE, ED | 2013-11-28 16:40 |
Osaka | A novel method for crystallizations of aluminum nitride PeiTsen Wu, Mitsuru Funato, Yoichi Kawakami (Kyoto Univ.) ED2013-75 CPM2013-134 LQE2013-110 |
In this work, a new method of AlN crystal growth is proposed. AlN powders, whiskers, and films have successfully been sy... [more] | ED2013-75 CPM2013-134 LQE2013-110 pp.51-55 |
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| CPM, LQE, ED | 2013-11-28 17:05 |
Osaka | Fabrication of the multi-junction GaInN based solar cells using tunnel junction Hironori Kurokawa, Tomomi Goda, Mitsuru Kaga, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama (Meijo Univ.), Isamu Akasaki (Meijo Univ./Nagoya Univ.), Hiroshi Amano (Nagoya Univ.) ED2013-76 CPM2013-135 LQE2013-111 |
[more] | ED2013-76 CPM2013-135 LQE2013-111 pp.57-61 |
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| CPM, LQE, ED | 2013-11-29 09:30 |
Osaka | OMVPE growth and red luminescence properties of Eu doped GaN/AlGaN multiple quantum well structures Takanori Arai, Ryuta Wakamatsu, Dong-gun Lee, Atsushi Koizumi, Yasufumi Fujiwara (Osaka Univ.) ED2013-77 CPM2013-136 LQE2013-112 |
We have grown Eu-doped GaN/AlGaN multiple quantum well (MQW:Eu) structures by organometallic vapor-phase epitaxy, and in... [more] | ED2013-77 CPM2013-136 LQE2013-112 pp.63-66 |
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| CPM, LQE, ED | 2013-11-29 09:55 |
Osaka | Deep-level transient spectroscopy study on defect levels in Eu,Si-codoped GaN grown by organometallic vapor phase epitaxy Souichirou Kuwata, Atsushi Koizumi, Yasufumi Fujiwara (Osaka Univ.) ED2013-78 CPM2013-137 LQE2013-113 |
[more] | ED2013-78 CPM2013-137 LQE2013-113 pp.67-70 |
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| CPM, LQE, ED | 2013-11-29 10:20 |
Osaka | Growth of thick InGaN epilayer by high-pressure MOVPE Kouhei Yamashita, Yoshio Honda, Masahito Yamaguchi, Hiroshi Amano (Nagoya Univ.) |
[more] | ||
| CPM, LQE, ED | 2013-11-29 11:00 |
Osaka | Growth of GaN with thin 3C-SiC buffer layer on Si(111) substrate Masayoshi Katagiri, Kenta Izumi, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.), Hidehiko Oku, Hidetoshi Asamura, Keisuke Kawamura (Air Water R&D) ED2013-79 CPM2013-138 LQE2013-114 |
Since GaN is desired for optical and electronic devices, therefore reduction of substrate cost is very important topic. ... [more] | ED2013-79 CPM2013-138 LQE2013-114 pp.71-74 |
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| CPM, LQE, ED | 2013-11-29 11:25 |
Osaka | Annealing in N2-CO of AlN buffer layers on sapphire and high temperature growth of AlN layers by MOVPE Gou Nishio, Shuhei Suzuki, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.), Hiroyuki Fukuyama (Tohoku Univ.) ED2013-80 CPM2013-139 LQE2013-115 |
AlN has attracted attention for applications in the deep ultraviolet region, because of its wide direct band-gap and exc... [more] | ED2013-80 CPM2013-139 LQE2013-115 pp.75-78 |
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| CPM, LQE, ED | 2013-11-29 11:50 |
Osaka | Control of nucleation for AlN growth on 6H-SiC substrate by low-pressure HVPE Shin Kitagawa, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.) ED2013-81 CPM2013-140 LQE2013-116 |
Aluminum nitride (AlN) has a direct bandgap energy of 6.2 eV, which is the largest bandgap energy among III-V semiconduc... [more] | ED2013-81 CPM2013-140 LQE2013-116 pp.79-82 |
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| CPM, LQE, ED | 2013-11-29 13:30 |
Osaka | Development of Highly-Uniform 270-nm Deep-Ultraviolet Light-Emitting Diodes Takuya Mino (Riken/Panasonic), Hideki Hirayama (Riken), Norimichi Noguchi, Takayoshi Takano, Kenji Tsubaki (Riken/Panasonic) ED2013-82 CPM2013-141 LQE2013-117 |
High-quality AlN templates were successfully fabricated on sapphire substrates by using a 2-inchx3 metallorganic vapor p... [more] | ED2013-82 CPM2013-141 LQE2013-117 pp.83-86 |
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