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Technical Committee on Silicon Device and Materials (SDM) (Searched in: 2023)
Search Results: Keywords 'from:2023-05-19 to:2023-05-19'
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| CPM, ED, SDM | 2023-05-19 13:00 |
Aichi | Nagoya Institute of Technology (Primary: On-site, Secondary: Online) |
[Invited Talk]
Repeated bending endurance test of zinc oxide thin films deposited at room temperature on flexible substrates Toshihiko Maemoto, Kazuyori Oura, Hideo Wada, Masatoshi Koyama, Shigehiko Sasa, Ahikiko Fujii (Osaka Inst. of Tech.)  ED2023-1 CPM2023-1 SDM2023-18 |
We investigated the device structure of oxide thin-film devices that can operate even when bending, the evaluation of th... [more] | ED2023-1 CPM2023-1 SDM2023-18 pp.1-6 |
| CPM, ED, SDM | 2023-05-19 13:45 |
Aichi | Nagoya Institute of Technology (Primary: On-site, Secondary: Online) |
Effect of adding surfactants and high boiling solvents to PEDOT:PSS organic thermoelectric thin films Naoki Kishi, Keisuke Ono, Satoshi Hibi (Nagoya Inst. of Tech.) |
[more] | |
| CPM, ED, SDM | 2023-05-19 14:10 |
Aichi | Nagoya Institute of Technology (Primary: On-site, Secondary: Online) |
Flexible Thermoelectric Materials with ZnO Nanorods for Self-powered Physiological Sensors Hiroya Ikeda, Naoki Fujiwara, Koki Kato, Masaru Shimomura, Yasuhiro Hayakawa (Shizuoka Univ.), Toshitaka Yamakawa, Kazushi Ikeda (NAIST) ED2023-2 CPM2023-2 SDM2023-19 |
With the aim of developing high-efficiency flexible thermoelectric devices, such as wearable power generator and self-po... [more] | ED2023-2 CPM2023-2 SDM2023-19 pp.7-10 |
| CPM, ED, SDM | 2023-05-19 14:35 |
Aichi | Nagoya Institute of Technology (Primary: On-site, Secondary: Online) |
Micro Periodic Structures (LIPSS) Formed on Si Substrates Using Near-Infrared Free Electron Laser Irradiation Youta Hoshino, Nohira Masayoshi, Nobuyuki Iwata (Nihon Univ.) ED2023-3 CPM2023-3 SDM2023-20 |
We attempted to create Laser-Induced Periodic Surface Structures (LIPSS) by irradiating the Free Electron Laser (FEL) to... [more] | ED2023-3 CPM2023-3 SDM2023-20 pp.11-15 |
| CPM, ED, SDM | 2023-05-19 15:00 |
Aichi | Nagoya Institute of Technology (Primary: On-site, Secondary: Online) |
Relationship between motion constraints and walking behavior in a four-legged autonomous robot with an amoeba-inspired optimization mechanism Kazuki Matsuda, Seiya Kasai (Hokkaido Univ.) ED2023-4 CPM2023-4 SDM2023-21 |
[more] | ED2023-4 CPM2023-4 SDM2023-21 pp.16-19 |
| CPM, ED, SDM | 2023-05-19 15:40 |
Aichi | Nagoya Institute of Technology (Primary: On-site, Secondary: Online) |
Fabrication and evaluation of transfer-free graphene FETs on sapphire substrates using agglomeration phenomenon of Ni patterns with ultra-fine structure Ichiro Kato, Toshiharu Kubo, Makoto Miyoshi, Takashi Egawa (Nagoya Inst. of Tech.) ED2023-5 CPM2023-5 SDM2023-22 |
Using graphene as a FET requires transferring it to an insulating substrate, and defects may be introduced in the graphe... [more] | ED2023-5 CPM2023-5 SDM2023-22 pp.20-23 |
| CPM, ED, SDM | 2023-05-19 16:05 |
Aichi | Nagoya Institute of Technology (Primary: On-site, Secondary: Online) |
Effect of Ge Epitaxial Buffer Layer on Solid Phase Growth of Ge on Si Satoki Furuya, Mikiya Kuzutani, Jose A. Piedra-Lorenzana, Takeshi Hizawa, Keisuke Yamane, Yasuhiko Ishikawa (Toyohashi Univ. Tech.) ED2023-6 CPM2023-6 SDM2023-23 |
[more] | ED2023-6 CPM2023-6 SDM2023-23 pp.24-27 |
| CPM, ED, SDM | 2023-05-19 16:30 |
Aichi | Nagoya Institute of Technology (Primary: On-site, Secondary: Online) |
Low-damage photo-electrochemical etching and electrochemical characterization of p-GaN layers grown on n-GaN substrates Umi Takatsu, Kouta Kubo, Taketomo Sato (Hokkaido Univ.) ED2023-7 CPM2023-7 SDM2023-24 |
The effect of photoelectrochemical (PEC) etching on intentionally damaged p-GaN surfaces was investigated. The electroch... [more] | ED2023-7 CPM2023-7 SDM2023-24 pp.28-31 |
| CPM, ED, SDM | 2023-05-19 16:55 |
Aichi | Nagoya Institute of Technology (Primary: On-site, Secondary: Online) |
Study of device isolation technology of AlGaN/GaN high-electron-mobility transistors for their integration Tatsuya Akamatsu, Yoshiki Akira, Hiroshi Okada (TUT) ED2023-8 CPM2023-8 SDM2023-25 |
[more] | ED2023-8 CPM2023-8 SDM2023-25 pp.32-35 |
| CPM, ED, SDM | 2023-05-19 17:20 |
Aichi | Nagoya Institute of Technology (Primary: On-site, Secondary: Online) |
AlN film by reactive sputtering as a stressor for Ge photonic devices on Si Jose A. Piedra-Lorenzana, Shohei Kaneko, Takaaki Fukushima, Keisuke Yamane (Toyohashi Univ. Tec.), Junichi Fujikata (Tokushima Univ.), Yasuhiko Ishikawa (Toyohashi Univ. Tec.) ED2023-9 CPM2023-9 SDM2023-26 |
AlN deposited by reactive sputtering is studied as an external stressor for controlling the operating wavelength of near... [more] | ED2023-9 CPM2023-9 SDM2023-26 pp.36-39 |
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