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Technical Committee on Silicon Device and Materials (SDM) (Searched in: 2008)
Search Results: Keywords 'from:2008-12-05 to:2008-12-05'
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| SDM | 2008-12-05 10:30 |
Kyoto | Kyoto University, Katsura Campus, A1-001 | Effects of annealing on the structures and electrical characteristics of NiO thin films for ReRAM Yusuke Nishi, Tsunenobu Kimoto (Kyoto Univ.)  SDM2008-184 |
NiO thin films showing resistive switching characteristics have recently attracted extensive interest as one of the mate... [more] | SDM2008-184 pp.1-4 |
| SDM | 2008-12-05 10:50 |
Kyoto | Kyoto University, Katsura Campus, A1-001 | Research for Simplifying Structures of Si X-ray Detectors (Silicon Drift Detector) and Improving Sensitivity of High-Energy X-rays Hideharu Matsuura, Miyuki Takahashi, Kazunori Kohara, Kazuyo Yamamoto, Taketoshi Maeda, Yoshitaka Kagawa (Osaka Electro-Communication University) SDM2008-185 |
In order to efficiently collect electrons produced by X-rays, a silicon drift detector (SDD) with Peltier cooling has MO... [more] | SDM2008-185 pp.5-10 |
| SDM | 2008-12-05 11:10 |
Kyoto | Kyoto University, Katsura Campus, A1-001 | Low-damage high-rate sputtering of silicon induced by ethanol cluster ion beam Hiromichi Ryuto, Ryosuke Ozaki, Gikan H. Takaoka (Kyoto Univ.) SDM2008-186 |
Irradiation effect of an ethanol cluster ion beam on silicon surface was investigated. The cluster size distribution was... [more] | SDM2008-186 pp.11-15 |
| SDM | 2008-12-05 11:30 |
Kyoto | Kyoto University, Katsura Campus, A1-001 | Si atom movement in a-Si film by soft X-ray excitation using undulator source Yasuyuki Takanashi, Akira Heya, Naoto Matsuo, Kazuhiro Kanda (Univ. of Hyogo) SDM2008-187 |
We investigated the characteristics of a-Si film with thicknesses of 1 and 50 nm those were irradiated by soft X-ray fro... [more] | SDM2008-187 pp.17-20 |
| SDM | 2008-12-05 13:15 |
Kyoto | Kyoto University, Katsura Campus, A1-001 | [Invited Talk]
Mechanisms of Effective Work Function Modulation of Metal/Hf-based High-k Gate Stacks Heiji Watanabe, Yuki Kita, Takuji Hosoi, Takayoshi Shimura (Osaka Univ.), Kenji Shiraishi (Univ. of Tsukuba), Yasuo Nara (SELETE), Keisaku Yamada (Waseda Univ.) SDM2008-188 |
[more] | SDM2008-188 pp.21-25 |
| SDM | 2008-12-05 13:50 |
Kyoto | Kyoto University, Katsura Campus, A1-001 | Electrical Properties of Bio-Nano-Dot Floating-gate MOSFETs with Ultra-thin Tunnel Oxide Hiroyuki Irifune, Hiroshi Yano, Yukiharu Uraoka, Takashi Fuyuki, Ichiro Yamashita (Nara Institute ofScience and Tecnology) SDM2008-189 |
So far, we have already developed floating gate memory devices using bio-nano-dot (BND). In this study, we fabricated an... [more] | SDM2008-189 pp.27-30 |
| SDM | 2008-12-05 14:10 |
Kyoto | Kyoto University, Katsura Campus, A1-001 | Electrical properties of 4H-SiC MOS devices fabricated on C-face with NO direct oxidation Yuki Oshiro, Dai Okamoto, Hiroshi Yano, Tomoaki Hatayama, Yukiharu Uraoka, Takashi Fuyuki (Nara Institute of Science and Technology) SDM2008-190 |
[more] | SDM2008-190 pp.31-35 |
| SDM | 2008-12-05 14:30 |
Kyoto | Kyoto University, Katsura Campus, A1-001 | Improved Performance of an SiC MOSFET by a Three-Dimensional Gate Structure Yuichiro Nanen, Hironori Yoshioka, Masato Noborio, Jun Suda, Tsunenobu Kimoto (Kyoto Univ) SDM2008-191 |
4H-SiC (0001) MOSFETs with a three-dimensional gate structure, which has side-wall channels on the {11-20} face have bee... [more] | SDM2008-191 pp.37-41 |
| SDM | 2008-12-05 15:10 |
Kyoto | Kyoto University, Katsura Campus, A1-001 | Electrical Properties of Ferroelectric Thin Films by Alcohol Rerated Materials Masaki Yamaguchi, Tomohiro Oba (Shibaura Inst. of Tech.), Yoichiro Masuda (Hachinohe Inst. of Tech.) SDM2008-192 |
The inkjet technique is devised as one of the thin film formation method of the next generation. We synthesized the ferr... [more] | SDM2008-192 pp.43-47 |
| SDM | 2008-12-05 15:30 |
Kyoto | Kyoto University, Katsura Campus, A1-001 | Change in electrical properties of SiO2/Si interface as well as Si caused by Ultraviolet light and plasma irradiations Megumu Takiuchi, Toshiyuki Sameshima (Tokyo University of Agriculture and Technology) SDM2008-193 |
Changes in electrical properties of metal-oxide-semiconductor irradiated by plasma or UV laser are reported. Capacitance... [more] | SDM2008-193 pp.49-54 |
| SDM | 2008-12-05 15:50 |
Kyoto | Kyoto University, Katsura Campus, A1-001 | Amorphization of Germanium by Ion Implantatin for Shallow Junction Formation Kosei Osada, Kentaro Shibahara (Hiroshima Univ.) SDM2008-194 |
For ultra-shallow junction formation process, that is indispensable for scaled Si MOSFET fabrication, pre-amorphization ... [more] | SDM2008-194 pp.55-58 |
| SDM | 2008-12-05 16:10 |
Kyoto | Kyoto University, Katsura Campus, A1-001 | Electrical characterization of HfO2/Ge MIS structure treated by fluorine gas Hideto Imajo, Hyun Lee, Yuichi Yoshioka, Takeshi Kanashima, Masanori Okuyama (Osaka Univ.) SDM2008-195 |
High-k/Ge MIS is expected as gate structure of the next-generation FET which has high mobility. However, electrical perf... [more] | SDM2008-195 pp.59-64 |
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