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Technical Committee on Electron Devices (ED)  (Searched in: 2016)

Search Results: Keywords 'from:2016-10-25 to:2016-10-25'

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Search Results: Conference Papers
 Conference Papers (Available on Advance Programs)  (Sort by: Date Ascending)
 Results 1 - 15 of 15  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
ED 2016-10-25
13:00
Mie   I-V characteristics of W-FE covered with Thorium
Yamanashi Ryotaro, Yoichiro Neo (Shizuoka Univ.), Teruaki Ohno (Technex), Hidenori Mimura (Shizuoka Univ.) ED2016-43
Tungsten based field emission cathode(W-FE) has been used for SEM as high brightness and narrow energy distribution cath... [more] ED2016-43
pp.1-4
ED 2016-10-25
13:25
Mie   Operational Characteristics and Analysis of Field Emitter Arrays under X-ray Irradiation
Yasuhito Gotoh, Hiroshi Tsuji (Kyoto Univ.), Masayoshi Nagao (AIST), Masafumi Akiyoshi (Osaka Pref. Univ.), Ikuji Takagi (Kyoto Univ.) ED2016-44
 [more] ED2016-44
pp.5-8
ED 2016-10-25
13:50
Mie   Computer simulation for evaluation of performance of amplifier with vacuum transistor
Yasuhito Gotoh (Kyoto Univ.)
 [more]
ED 2016-10-25
14:15
Mie   Development Activity of Vacuum Electronics in THz Band
Mitsuru Yoshida, Junichi Kobayashi, Yusuke Fujishita, Norio Masuda (NETS), Norihiko Sekine, Atsushi Kanno, Naokatsu Yamamoto, Akifumi Kasamatsu, Iwao Hosako (NICT) ED2016-45
There is a region called "Terahertz Gap" between the highest frequency of microwave technology and the lowest frequency ... [more] ED2016-45
pp.9-12
ED 2016-10-25
14:40
Mie   Study on the photoresponse of silicon field emitter arrays (II)
Hidetaka Shimawaki (HIT), Masayoshi Nagao (AIST), Yoichiro Neo, Hidenori Mimura (Shizuoka Univ.), Fujio Wakaya, Mikio Takai (Osaka Univ.) ED2016-46
We have fabricated silicon field emitter arrays with submicron gate opening by using etch-back technique and investigate... [more] ED2016-46
pp.13-15
ED 2016-10-25
15:20
Mie   Stabilization of spin polarization of field emitted electrons using interlayer antiferromagnetic Cr (001) surface
Kento Miyazaki, Naoya Sakai (Mie Univ), Shigekazu Nagai, Tatsuo Iwata, Kazuo Kajiwara, Koichi Hata (Mie Univ/ Mie CUTE) ED2016-47
It is important to evaluate spin states at magnetic surfaces for developments of spintronics devices by utilizing both e... [more] ED2016-47
pp.17-20
ED 2016-10-25
15:45
Mie   Ab initio calculations of field emission from carbon emitters on the basis of time-dependent density functional theory (II)
Toshiharu Higuchi, Masahiro Sasaki, Yoichi Yamada (Univ. of Tsukuba) ED2016-48
To clarify the origin of the superior field emission characteristics of carbon emitters, we have estimated the emission ... [more] ED2016-48
pp.21-26
ED 2016-10-25
16:10
Mie   Diagnosis for electron beam pulse from NEA-GaAs PhotoCathode
Ryo Yoshitake, Keigo Mitsuno, Tomoaki Masuzawa, Yoshinori Hatanaka, Makoto Hosoda, Yoichiro Neo, Hidenori Mimura (Shizuoka Univ) ED2016-49
The electromagnetic wave of higher frequency than 100GHz is called sub-millimeter wave. The high intense sub-millimeter ... [more] ED2016-49
pp.27-30
ED 2016-10-25
16:35
Mie   Fabrication of Vacuum Nanoelectronics Devices using Minimal Fab System
Masayoshi Nagao, Katsuhisa Murakami, Noriyuki Tatsumi, Sommawan Khumpuang, Shiro Hara (AIST), Yasuhito Gotoh (Kyoto Univ.) ED2016-50
 [more] ED2016-50
pp.31-36
ED 2016-10-26
09:30
Mie   A planer-type electron emission device using graphene gate electrode
Katsuhisa Murakami (AIST), Shunsuke Tanaka (Univ. Tsukuba), Masayoshi Nagao (AIST), Yoshihiro Nemoto, Masaki Takeguchi (NIMS), Jun-ichi Fujita (Univ. Tsukuba) ED2016-51
 [more] ED2016-51
pp.37-40
ED 2016-10-26
09:55
Mie   Electron Emission from W(100) Surface modified by Group 3 Elements -- Work Function Reduction by Sc Oxide, Pr Oxide and Nd Oxide --
Takashi Kawakubo (NIT Kagawa), Hideaki Nakane (Muroran Inst. of Tech.) ED2016-52
Tungsten which is one of high melting metal is employed as the material of the electron source. The work function of tun... [more] ED2016-52
pp.41-46
ED 2016-10-26
10:20
Mie   Fabrication of nano-emitter use of palladium dioxide dispersed in collodion
Hirotaka Asai, Shigeki Kumagai, Hidekazu Murata, Eiji Rokuta (Meijo Univ.) ED2016-53
(To be available after the conference date) [more] ED2016-53
pp.47-50
ED 2016-10-26
11:00
Mie   A verification of formation process of emitters with nano-protrusion fabricated by the field-induced oxygen etching
Minoru Wakamoto, Shigekazu Nagai, Tatsuo Iwata, Kazuo Kajiwara, Koichi Hata (MIe Univ.) ED2016-54
Focused ion beam systems equipped with liquid metal ion source has serious problems which are pollutions of samples due ... [more] ED2016-54
pp.51-56
ED 2016-10-26
11:25
Mie   Trials to Clarify the Mechanism of Low Field Emission from Carbon-related Materials -- Through Field Emission from Vacuum Arc-Prepared Carbon Films and C60 --
Masahiro Sasaki, Yoichi Yamada, Toshiharu Higuchi, Ken Asanagi, Manabu Adachi, Yuji Nishiyama, Takuma Mojin (U. of Tsukuba) ED2016-55
From some sorts of carbon-related materials, we have sometimes observed a onset applied field much smaller than that exp... [more] ED2016-55
pp.57-62
ED 2016-10-26
11:50
Mie   Radiation tolerance of CdTe/CdS photoconductive target
Tomoaki Masuzawa, Yoichiro Neo (Shizuoka Univ.), Yasuhito Gotoh (Kyoto Univ.), Tamotsu Okamoto (National Inst. of Technol. Kisarazu College), Masayoshi Nagao (AIST), Nobuhiro Sato (Kyoto Univ.), Masafumi Akiyoshi (Osaka Prefecture Univ.), Ikuji Takagi (Kyoto Univ.), Hidenori Mimura (Shizuoka Univ.) ED2016-56
In this study, radiation tolerance of CdTe/CdS photodiode was investigated. Irradiation of gamma-ray from cobalt-60 with... [more] ED2016-56
pp.63-66
 Results 1 - 15 of 15  /   
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