Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
ED |
2016-10-25 13:00 |
Mie |
|
I-V characteristics of W-FE covered with Thorium Yamanashi Ryotaro, Yoichiro Neo (Shizuoka Univ.), Teruaki Ohno (Technex), Hidenori Mimura (Shizuoka Univ.) ED2016-43 |
Tungsten based field emission cathode(W-FE) has been used for SEM as high brightness and narrow energy distribution cath... [more] |
ED2016-43 pp.1-4 |
ED |
2016-10-25 13:25 |
Mie |
|
Operational Characteristics and Analysis of Field Emitter Arrays under X-ray Irradiation Yasuhito Gotoh, Hiroshi Tsuji (Kyoto Univ.), Masayoshi Nagao (AIST), Masafumi Akiyoshi (Osaka Pref. Univ.), Ikuji Takagi (Kyoto Univ.) ED2016-44 |
[more] |
ED2016-44 pp.5-8 |
ED |
2016-10-25 13:50 |
Mie |
|
Computer simulation for evaluation of performance of amplifier with vacuum transistor Yasuhito Gotoh (Kyoto Univ.) |
[more] |
|
ED |
2016-10-25 14:15 |
Mie |
|
Development Activity of Vacuum Electronics in THz Band Mitsuru Yoshida, Junichi Kobayashi, Yusuke Fujishita, Norio Masuda (NETS), Norihiko Sekine, Atsushi Kanno, Naokatsu Yamamoto, Akifumi Kasamatsu, Iwao Hosako (NICT) ED2016-45 |
There is a region called "Terahertz Gap" between the highest frequency of microwave technology and the lowest frequency ... [more] |
ED2016-45 pp.9-12 |
ED |
2016-10-25 14:40 |
Mie |
|
Study on the photoresponse of silicon field emitter arrays (II) Hidetaka Shimawaki (HIT), Masayoshi Nagao (AIST), Yoichiro Neo, Hidenori Mimura (Shizuoka Univ.), Fujio Wakaya, Mikio Takai (Osaka Univ.) ED2016-46 |
We have fabricated silicon field emitter arrays with submicron gate opening by using etch-back technique and investigate... [more] |
ED2016-46 pp.13-15 |
ED |
2016-10-25 15:20 |
Mie |
|
Stabilization of spin polarization of field emitted electrons using interlayer antiferromagnetic Cr (001) surface Kento Miyazaki, Naoya Sakai (Mie Univ), Shigekazu Nagai, Tatsuo Iwata, Kazuo Kajiwara, Koichi Hata (Mie Univ/ Mie CUTE) ED2016-47 |
It is important to evaluate spin states at magnetic surfaces for developments of spintronics devices by utilizing both e... [more] |
ED2016-47 pp.17-20 |
ED |
2016-10-25 15:45 |
Mie |
|
Ab initio calculations of field emission from carbon emitters on the basis of time-dependent density functional theory (II) Toshiharu Higuchi, Masahiro Sasaki, Yoichi Yamada (Univ. of Tsukuba) ED2016-48 |
To clarify the origin of the superior field emission characteristics of carbon emitters, we have estimated the emission ... [more] |
ED2016-48 pp.21-26 |
ED |
2016-10-25 16:10 |
Mie |
|
Diagnosis for electron beam pulse from NEA-GaAs PhotoCathode Ryo Yoshitake, Keigo Mitsuno, Tomoaki Masuzawa, Yoshinori Hatanaka, Makoto Hosoda, Yoichiro Neo, Hidenori Mimura (Shizuoka Univ) ED2016-49 |
The electromagnetic wave of higher frequency than 100GHz is called sub-millimeter wave. The high intense sub-millimeter ... [more] |
ED2016-49 pp.27-30 |
ED |
2016-10-25 16:35 |
Mie |
|
Fabrication of Vacuum Nanoelectronics Devices using Minimal Fab System Masayoshi Nagao, Katsuhisa Murakami, Noriyuki Tatsumi, Sommawan Khumpuang, Shiro Hara (AIST), Yasuhito Gotoh (Kyoto Univ.) ED2016-50 |
[more] |
ED2016-50 pp.31-36 |
ED |
2016-10-26 09:30 |
Mie |
|
A planer-type electron emission device using graphene gate electrode Katsuhisa Murakami (AIST), Shunsuke Tanaka (Univ. Tsukuba), Masayoshi Nagao (AIST), Yoshihiro Nemoto, Masaki Takeguchi (NIMS), Jun-ichi Fujita (Univ. Tsukuba) ED2016-51 |
[more] |
ED2016-51 pp.37-40 |
ED |
2016-10-26 09:55 |
Mie |
|
Electron Emission from W(100) Surface modified by Group 3 Elements
-- Work Function Reduction by Sc Oxide, Pr Oxide and Nd Oxide -- Takashi Kawakubo (NIT Kagawa), Hideaki Nakane (Muroran Inst. of Tech.) ED2016-52 |
Tungsten which is one of high melting metal is employed as the material of the electron source. The work function of tun... [more] |
ED2016-52 pp.41-46 |
ED |
2016-10-26 10:20 |
Mie |
|
Fabrication of nano-emitter use of palladium dioxide dispersed in collodion Hirotaka Asai, Shigeki Kumagai, Hidekazu Murata, Eiji Rokuta (Meijo Univ.) ED2016-53 |
(To be available after the conference date) [more] |
ED2016-53 pp.47-50 |
ED |
2016-10-26 11:00 |
Mie |
|
A verification of formation process of emitters with nano-protrusion fabricated by the field-induced oxygen etching Minoru Wakamoto, Shigekazu Nagai, Tatsuo Iwata, Kazuo Kajiwara, Koichi Hata (MIe Univ.) ED2016-54 |
Focused ion beam systems equipped with liquid metal ion source has serious problems which are pollutions of samples due ... [more] |
ED2016-54 pp.51-56 |
ED |
2016-10-26 11:25 |
Mie |
|
Trials to Clarify the Mechanism of Low Field Emission from Carbon-related Materials
-- Through Field Emission from Vacuum Arc-Prepared Carbon Films and C60 -- Masahiro Sasaki, Yoichi Yamada, Toshiharu Higuchi, Ken Asanagi, Manabu Adachi, Yuji Nishiyama, Takuma Mojin (U. of Tsukuba) ED2016-55 |
From some sorts of carbon-related materials, we have sometimes observed a onset applied field much smaller than that exp... [more] |
ED2016-55 pp.57-62 |
ED |
2016-10-26 11:50 |
Mie |
|
Radiation tolerance of CdTe/CdS photoconductive target Tomoaki Masuzawa, Yoichiro Neo (Shizuoka Univ.), Yasuhito Gotoh (Kyoto Univ.), Tamotsu Okamoto (National Inst. of Technol. Kisarazu College), Masayoshi Nagao (AIST), Nobuhiro Sato (Kyoto Univ.), Masafumi Akiyoshi (Osaka Prefecture Univ.), Ikuji Takagi (Kyoto Univ.), Hidenori Mimura (Shizuoka Univ.) ED2016-56 |
In this study, radiation tolerance of CdTe/CdS photodiode was investigated. Irradiation of gamma-ray from cobalt-60 with... [more] |
ED2016-56 pp.63-66 |