|
|
| Chair |
|
Shigeyoshi Watanabe (Shonan Inst. of Tech.) |
| Vice Chair |
|
Toshihiro Sugii (Fujitsu Microelectronics) |
| Secretary |
|
Shigeru Kawanaka (Toshiba), Hisahiro Anzai (Sony) |
| Assistant |
|
Syunichiro Ohmi (Tokyo Inst. of Tech.) |
|
| Conference Date |
Fri, Dec 5, 2008 10:30 - 16:30 |
| Topics |
Fabrication and Characterization of Si and Si-related Materials and Devices |
| Conference Place |
A1-001, Katsura Campus, Kyoto University |
| Address |
Kyotodaigaku-katsura, Nishikyo, Kyoto 615-8510, Japan |
| Transportation Guide |
http://www.kyoto-u.ac.jp/ja/access/campus/map6r_k.htm |
Contact
Person |
Tsunenobu Kimoto
075-383-2300 |
Copyright
and
reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Fri, Dec 5 AM
10:30 - 16:30 |
| (1) |
10:30-10:50 |
Effects of annealing on the structures and electrical characteristics of NiO thin films for ReRAM  SDM2008-184 |
Yusuke Nishi, Tsunenobu Kimoto (Kyoto Univ.) |
| (2) |
10:50-11:10 |
Research for Simplifying Structures of Si X-ray Detectors (Silicon Drift Detector) and Improving Sensitivity of High-Energy X-rays SDM2008-185 |
Hideharu Matsuura, Miyuki Takahashi, Kazunori Kohara, Kazuyo Yamamoto, Taketoshi Maeda, Yoshitaka Kagawa (Osaka Electro-Communication University) |
| (3) |
11:10-11:30 |
Low-damage high-rate sputtering of silicon induced by ethanol cluster ion beam SDM2008-186 |
Hiromichi Ryuto, Ryosuke Ozaki, Gikan H. Takaoka (Kyoto Univ.) |
| (4) |
11:30-11:50 |
Si atom movement in a-Si film by soft X-ray excitation using undulator source SDM2008-187 |
Yasuyuki Takanashi, Akira Heya, Naoto Matsuo, Kazuhiro Kanda (Univ. of Hyogo) |
| |
11:50-13:15 |
Lunch Break ( 85 min. ) |
| (5) |
13:15-13:50 |
[Invited Talk]
Mechanisms of Effective Work Function Modulation of Metal/Hf-based High-k Gate Stacks SDM2008-188 |
Heiji Watanabe, Yuki Kita, Takuji Hosoi, Takayoshi Shimura (Osaka Univ.), Kenji Shiraishi (Univ. of Tsukuba), Yasuo Nara (SELETE), Keisaku Yamada (Waseda Univ.) |
| (6) |
13:50-14:10 |
Electrical Properties of Bio-Nano-Dot Floating-gate MOSFETs with Ultra-thin Tunnel Oxide SDM2008-189 |
Hiroyuki Irifune, Hiroshi Yano, Yukiharu Uraoka, Takashi Fuyuki, Ichiro Yamashita (Nara Institute ofScience and Tecnology) |
| (7) |
14:10-14:30 |
Electrical properties of 4H-SiC MOS devices fabricated on C-face with NO direct oxidation SDM2008-190 |
Yuki Oshiro, Dai Okamoto, Hiroshi Yano, Tomoaki Hatayama, Yukiharu Uraoka, Takashi Fuyuki (Nara Institute of Science and Technology) |
| (8) |
14:30-14:50 |
Improved Performance of an SiC MOSFET by a Three-Dimensional Gate Structure SDM2008-191 |
Yuichiro Nanen, Hironori Yoshioka, Masato Noborio, Jun Suda, Tsunenobu Kimoto (Kyoto Univ) |
| |
14:50-15:10 |
Break ( 20 min. ) |
| (9) |
15:10-15:30 |
Electrical Properties of Ferroelectric Thin Films by Alcohol Rerated Materials SDM2008-192 |
Masaki Yamaguchi, Tomohiro Oba (Shibaura Inst. of Tech.), Yoichiro Masuda (Hachinohe Inst. of Tech.) |
| (10) |
15:30-15:50 |
Change in electrical properties of SiO2/Si interface as well as Si caused by Ultraviolet light and plasma irradiations SDM2008-193 |
Megumu Takiuchi, Toshiyuki Sameshima (Tokyo University of Agriculture and Technology) |
| (11) |
15:50-16:10 |
Amorphization of Germanium by Ion Implantatin for Shallow Junction Formation SDM2008-194 |
Kosei Osada, Kentaro Shibahara (Hiroshima Univ.) |
| (12) |
16:10-16:30 |
Electrical characterization of HfO2/Ge MIS structure treated by fluorine gas SDM2008-195 |
Hideto Imajo, Hyun Lee, Yuichi Yoshioka, Takeshi Kanashima, Masanori Okuyama (Osaka Univ.) |
| Announcement for Speakers |
| General Talk | Each speech will have 15 minutes for presentation and 5 minutes for discussion. |
| Invited Talk | Each speech will have 30 minutes for presentation and 5 minutes for discussion. |
| Contact Address and Latest Schedule Information |
| SDM |
Technical Committee on Silicon Device and Materials (SDM) [Latest Schedule]
|
| Contact Address |
Shigeru KAWANAKA (Toshiba)
TEL 045-776-5670, FAX 045-776-4104
E-  ge       ba
Tsunenobu Kimoto (Kyoto University)
Tel: 075-383-2300 Fax: 075-383-2303
E-:    eek -u |
Last modified: 2008-10-21 19:33:10
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