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Technical Committee on Silicon Device and Materials (SDM) (Searched in: 2016)
Search Results: Keywords 'from:2016-11-10 to:2016-11-10'
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| SDM | 2016-11-10 10:00 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
SISPAD 2016 Review (1) Kenichiro Sonoda (Renesas Electronics)  SDM2016-79 |
[more] | SDM2016-79 pp.1-7 |
| SDM | 2016-11-10 11:00 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Channel Properties of SiC Trench-Etched Double-Implanted MOS (TED MOS) Naoki Tega, Digh Hisamoto, Akio Shima, Yasuhiro Shimamoto (Hitachi) SDM2016-80 |
We comprehensively studied the channel properties of a silicon carbide trench-etched double-implanted MOS (SiC TED MOS).... [more] | SDM2016-80 pp.9-14 |
| SDM | 2016-11-10 13:30 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Potential and Prospects of Low-Energy SOI Devices in Sensor Network Era Yasuhisa Omura (Kansai Univ.) SDM2016-81 |
This paper discusses, in detail, the potential and prospects of various SOI devices including SOI TFETs. Device perform... [more] | SDM2016-81 pp.15-22 |
| SDM | 2016-11-10 14:30 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Free carrier density dependent band gap and phonon frequency in germanium Shoichi Kabuyanagi, Akira Toriumi (The Univ. of Tokyo) SDM2016-82 |
[more] | SDM2016-82 pp.23-26 |
| SDM | 2016-11-10 15:40 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Simulation for Impact of ISFET Structure on Sensitivity Kazuya Matsuzawa (Toshiba) SDM2016-83 |
[more] | SDM2016-83 pp.27-32 |
| SDM | 2016-11-11 10:00 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Review of SISPAD 2016 (2) Yoshinari Kamakura (Osaka Univ.) SDM2016-84 |
[more] | SDM2016-84 pp.33-36 |
| SDM | 2016-11-11 11:00 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Simulation Studies Contributing to Development of Wide-Bandgap Power Semiconductor Devices Kazuhiro Mochizuki (AIST) SDM2016-85 |
Studies contributing to wide-bandgap semiconductor (e.g., 4H-SiC and 2H-GaN) power devices, using commercial process and... [more] | SDM2016-85 pp.37-42 |
| SDM | 2016-11-11 13:30 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Detection and Analysis of Single MOS Interface Traps Using the Charge Pumping Method
-- Toward Advanced Atomistic Trap Physics -- Toshiaki Tsuchiya (Shimane Univ.) SDM2016-86 |
We have developed effective procedures to detect and characterize single MOS interface traps by the charge pumping (CP) ... [more] | SDM2016-86 pp.43-47 |
| SDM | 2016-11-11 14:30 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Application of DFT Calculation for the Development of High Quality Si and Ge Substrates
-- From Ultra Large Diameter Crystal Pulling to Metal Gettering -- Koji Sueoka (Okayama Pref. Univ.) SDM2016-87 |
During the last decade, considerable progress has been made in understanding the properties and behavior of the vacancy ... [more] | SDM2016-87 pp.49-54 |
| SDM | 2016-11-11 15:40 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Self-Consistent Monte Carlo Device Simulations Under Double-Gate Device Structures Hajime Sakamoto, Yasuaki Rokugo, Nobuyuki Sano (Tsukuba univ.) SDM2016-88 |
We examine the effect of long-range Coulomb interaction on the double-gate MOSFET by using the self-consistent 3D Monte ... [more] | SDM2016-88 pp.55-58 |
| SDM | 2016-11-11 16:05 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Self-Consistent Device Simulation of a-Si p-i-n Solar Cells and Physical Mechanism of Capture and Emission Processes Azuma Suzuki (Tsukuba Univ.), Katsuhisa Yoshida (Tokyo Univ.), Nobuyuki Sano (Tsukuba Univ.) SDM2016-89 |
(To be available after the conference date) [more] | SDM2016-89 pp.59-64 |
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