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| Chair |
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Tamotsu Hashidume (Hokkaido Univ.) |
| Vice Chair |
|
Tetsu Kachi (Toyota Central R&D Labs.) |
| Secretary |
|
Koichi Murata (NTT), Naoki Hara (Fujitsu Labs.) |
| Assistant |
|
Kunio Tsuda (Toshiba), Michihiko Suhara (Tokyo Metropolitan Univ.) |
|
| Conference Date |
Thu, Jun 11, 2009 13:00 - 17:15
Fri, Jun 12, 2009 09:30 - 12:15 |
| Topics |
|
| Conference Place |
Tokyo Institute of Technology |
| Transportation Guide |
http://www.titech.ac.jp/access-and-campusmap/j/o-okayamaO-j.html |
Contact
Person |
Tokyo Institute of Technology Prof. Yasuyuki Miyamoto
03-5734-2572 |
Copyright
and
reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Thu, Jun 11 PM
13:00 - 17:15 |
| (1) |
13:00-13:25 |
Removal of high dose Ion-Implanted photoresists with SPMless cleaning |
Toshiya Sato, Tamotsu Suzuki, Akihiko Tsukahara (FML Ltd), Kyota Morihira (Aqua Science Corp) |
| (2) |
13:25-13:50 |
Evaluation of Cu-Inhibitor Residue for Post Cu-CMP Cleaning  ED2009-36 |
Atsushi Ito, Ken Harada, Yasuhiro Kawase, Fumikazu Mizutani (Mitsubishi Chem.), Makoto Hara, Hidemitsu Aoki, Chiharu Kimura, Takashi Sugino (Osaka Univ.) |
| (3) |
13:50-14:15 |
Post CMP Cleaning by Megasonic Using Waveguide Tube Type Equipment ED2009-37 |
Kazunari Suzuki (Kaijo Corp./Shibaura Inst. of Tech.), Ki Han, Shouichi Okano, Junichiro Soejima (Kaijo Corp.), Yoshikazu Koike (Shibaura Inst. of Tech.) |
| |
14:15-14:30 |
Break ( 15 min. ) |
| (4) |
14:30-14:55 |
Development of bevel brush scrubbing process ED2009-38 |
Yoshiya Hagimoto, Hayato Iwamoto (Sony Corp.) |
| (5) |
14:55-15:20 |
Dependence of Characteristics of Methyl-BCN Film on RF Bias ED2009-39 |
Takuro Masuzumi, Makoto Hara, Hidemitsu Aoki, Zhiming Lu, Chiharu Kimura, Takashi Sugino (Osaka Univ.) |
| |
15:20-15:35 |
Break ( 15 min. ) |
| (6) |
15:35-16:00 |
Electrical characterization of plasma-induced defects in GaN ED2009-40 |
Seiji Nakamura, Koichi Hoshino, Shunsuke Ochiai, Michihiko Suhara, Tsugunori Okumura (Tokyo Metro Univ.) |
| (7) |
16:00-16:25 |
Characterization of ALD-Al2O3/AlGaN/GaN interfaces ED2009-41 |
Chihoko Mizue, Yujin Hori (Hokkaido Univ.), Marcin Miczek (Silesian Univ. of Tech.), Tamotsu Hashizume (Hokkaido Univ.) |
| (8) |
16:25-16:50 |
Improvement in Device Performance in MIS AlGaN/GaN HFETs by Designing Insulator/AlGaN/GaN Structures ED2009-42 |
Narihiko Maeda, Masanobu Hiroki, Takatomo Enoki (NTT), Takashi Kobayashi (NTT AT) |
| (9) |
16:50-17:15 |
A study on low damage dry etching for AlGaN/GaN-HEMT ED2009-43 |
Masahiko Kuraguchi, Miki Yumoto, Yoshiharu Takada, Kunio Tsuda (Toshiba Corp.) |
Fri, Jun 12 AM
09:30 - 12:15 |
| (10) |
09:30-09:55 |
Theoretical Study of Band Structures and Electron Transport properties in Strained InAs and InSb ED2009-44 |
Hiroyuki Nishino, Ichita Kawahira, Shinsuke Hara, Hiroki I. Fujishiro (Tokyo Univ. of Sci.) |
| (11) |
09:55-10:20 |
Anisotropy of two-dimensional electron mobilities in InGaAs/InP ED2009-45 |
Masashi Akabori (JAIST/Research Centre Juelich), Thanh Quang Trinh, Masahiro Kudo (JAIST), Thomas Schaepers, Hilde Hardtdegen (Research Centre Juelich), Toshi-kazu Suzuki (JAIST) |
| (12) |
10:20-10:45 |
In-situ etching by CBr4 in InP heterojunction bipolar transistors with buried SiO2 wire ED2009-46 |
Naoaki Takebe, Hiroaki Yamashita, Shinnosuke Takahashi, Hisashi Saito, Takashi Kobayashi, Yasuyuki Miyamoto, Kazuhito Furuya (Tokyo Inst. of Tech.) |
| |
10:45-11:00 |
Break ( 15 min. ) |
| (13) |
11:00-11:25 |
Electric characteristics of recessed gate MIS-AlGaN/GaN-HEMT with a thermal CVD SiN gate insulator film. ED2009-47 |
Toshiharu Marui, Shinichi Hoshi, Fumihiko Toda, Yoshiaki Morino, Masanori Itoh, Hideyuki Okita, Isao Tamai, Shohei Seki (Oki Electric Industry Co.,Ltd.) |
| (14) |
11:25-11:50 |
Effect of Epitaxial Layer Design on Drain Leakage Current for Millimeter-Wave GaN-HEMT ED2009-48 |
Atsushi Yamada, Kozo Makiyama, Toshihiro Ohki, Masahito Kanamura, Kazukiyo Joshin, Kenji Imanishi (Fujitsu and Fujitsu Labs.), Naoki Hara (Fujitsu Labs.), Toshihide Kikkawa (Fujitsu and Fujitsu Labs.) |
| (15) |
11:50-12:15 |
Influence of SiC Substrate Misorientation on AlGaN/GaN HEMTs Performance ED2009-49 |
Keiichi Matsushita, Hiroyuki Sakurai, Jeoungchill Shim, Kazutaka Takagi, Hisao Kawasaki, Yoshiharu Takada, Kunio Tsuda (Toshiba Corp.) |
| Contact Address and Latest Schedule Information |
| ED |
Technical Committee on Electron Device (ED) [Latest Schedule]
|
| Contact Address |
Koichi Murata（NTT)
TEL：046-240-2871、FAX：046-270-2872
E- ：     aecl  
Hara Naoki （Fujitsu Lab.）
TEL : 046-250-8242、FAX : 046-250-8168
E- :   o     
Kunio Tsuda（Toshiba）
TEL : 044-549-2142、FAX : 044-520-1501
E- :   o   ba
Michihiko Suhara(Tokyo Metro. Univ.)
TEL : 042-677-2765, FAX : 042-677-2756
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Last modified: 2009-09-07 15:42:59
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