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Technical Committee on Electron Devices (ED) (Searched in: 2018)
Search Results: Keywords 'from:2018-11-29 to:2018-11-29'
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| ED, LQE, CPM | 2018-11-29 13:00 |
Aichi | Nagoya Inst. tech. | Fabrication and optical anisotropy of GaN/AlN ultra-thin quantum wells Mitsuru Funato, Shuhei Ichikawa, Yoichi Kawakami (Kyoto Univ.)  ED2018-32 CPM2018-66 LQE2018-86 |
[more] | ED2018-32 CPM2018-66 LQE2018-86 pp.1-4 |
| ED, LQE, CPM | 2018-11-29 13:25 |
Aichi | Nagoya Inst. tech. | Growth of epitaxial AlInN films on c-plane GaN and the relationship between their alloy compositions and microstructures Mizuki Yamanaka, Makoto Miyoshi, Takashi Egawa (Nagoya Inst. Tech), Tetsuya Takeuchi (Meijo Univ.) ED2018-33 CPM2018-67 LQE2018-87 |
[more] | ED2018-33 CPM2018-67 LQE2018-87 pp.5-8 |
| ED, LQE, CPM | 2018-11-29 13:50 |
Aichi | Nagoya Inst. tech. | Recent progress toward realization of AlGaN deep UV LD Noritohsi Maeda (RIKEN), Yoichi Yamada (Yamaguchi Univ.), Masafumi Jo, Hideki Hirayama (RIKEN) ED2018-34 CPM2018-68 LQE2018-88 |
[more] | ED2018-34 CPM2018-68 LQE2018-88 pp.9-12 |
| ED, LQE, CPM | 2018-11-29 14:15 |
Aichi | Nagoya Inst. tech. | Improvement of channel mobility in GaN-MOS structure by surface treatment of recessed-GaN and dielectric SiO2 annealing Yosuke Kajiwara, Aya Shindome, Toshiki Hikosaka, Masahiko Kuraguchi (Toshiba Corp.), Akira Yoshioka (Toshiba Electronic Device & Storage Corp.), Shinya Nunoue (Toshiba Corp.) ED2018-35 CPM2018-69 LQE2018-89 |
In the previous work, we studied on the channel mobility in the Normally-off recessed GaN-based metal-oxide-semiconducto... [more] | ED2018-35 CPM2018-69 LQE2018-89 pp.13-16 |
| ED, LQE, CPM | 2018-11-29 14:40 |
Aichi | Nagoya Inst. tech. | Scanning internal photoemission microscopy measurements of n-GaN Schottky contacts under applying voltage Kenji Shiojima, Masataka Maeda (Univ. of Fukui), Tomoyoshi Mishima (Hosei Univ.) ED2018-36 CPM2018-70 LQE2018-90 |
We applied scanning internal photoemission microscopy (SIPM) method to characterize the initial stage of the degradation... [more] | ED2018-36 CPM2018-70 LQE2018-90 pp.17-20 |
| ED, LQE, CPM | 2018-11-29 15:15 |
Aichi | Nagoya Inst. tech. | Experiment and evaluation for the methods of nanoimprinting moth eye structure Kenta Hiraga, Shigeru Kubota, Kensaku Kanomata, Bashir Ahmmad, Fumihiko Hirose (Yamagata Univ.) ED2018-37 CPM2018-71 LQE2018-91 |
(To be available after the conference date) [more] | ED2018-37 CPM2018-71 LQE2018-91 pp.21-26 |
| ED, LQE, CPM | 2018-11-29 15:40 |
Aichi | Nagoya Inst. tech. | Development and ion absorption characterization of the zeolite films on flexible film using atomic layer deposition Yoshiharu Mori, Yusuke Noguti, Kensaku Kanomata, Masanori Miura, Bashir A. Arima, Shigeru Kubota, Fumihiko Hirose (Yamagata Univ.) ED2018-38 CPM2018-72 LQE2018-92 |
(To be available after the conference date) [more] | ED2018-38 CPM2018-72 LQE2018-92 pp.27-30 |
| ED, LQE, CPM | 2018-11-29 16:05 |
Aichi | Nagoya Inst. tech. | Enhanced efficiency of CdS quantum dot solar cell by photo electrode modification Yuya Kibata, Masanori Miura, Kensaku Kanomata, Shigeru Kubota, Fumihiko Hirose, Bashir Ahmmad Arima (Yamagata Univ.) ED2018-39 CPM2018-73 LQE2018-93 |
[more] | ED2018-39 CPM2018-73 LQE2018-93 pp.31-33 |
| ED, LQE, CPM | 2018-11-29 16:30 |
Aichi | Nagoya Inst. tech. | Fabrication of FeSxOy thin film by tartaric acid added three-step pulse electrochemical deposition and fabrication of ZnO/FeSxOy heterojunction solar cell Wen Ji, Masaya Ichimura (NIT) ED2018-40 CPM2018-74 LQE2018-94 |
FeS2 is a p-type semiconductor with a narrow band gap and thus is regarded as a good absorber in a heterojunction solar ... [more] | ED2018-40 CPM2018-74 LQE2018-94 pp.35-39 |
| ED, LQE, CPM | 2018-11-30 09:00 |
Aichi | Nagoya Inst. tech. | A 2.5-kV-breakdown-voltage AlGaN-channel HFET with a strain-controlled AlGaInN barrier layer Daiki Hosomi, Keita Furuoka, Heng Chen, Saki Saito, Toshiharu Kubo, Takashi Egawa, Makoto Miyoshi (Nagoya Inst. of Tech.) ED2018-41 CPM2018-75 LQE2018-95 |
Novel AlGaN-channel heterostructures employing quaternary AlGaInN barriers were grown by metalorganic chemical vapor dep... [more] | ED2018-41 CPM2018-75 LQE2018-95 pp.41-44 |
| ED, LQE, CPM | 2018-11-30 09:25 |
Aichi | Nagoya Inst. tech. | Effects of annealing ambient on electrical properties of ALD-Al2O3/AlGaN/GaN MIS-HEMTs Keita Furuoka, Toshiharu Kubo, Makoto Miyoshi, Takashi Egawa (Nagoya Inst. of Tech.) ED2018-42 CPM2018-76 LQE2018-96 |
We conducted post-deposition annealing (PDA) and post-metalization annealing in various annealing atmosphere and evaluat... [more] | ED2018-42 CPM2018-76 LQE2018-96 pp.45-48 |
| ED, LQE, CPM | 2018-11-30 09:50 |
Aichi | Nagoya Inst. tech. | Chemical Bath Deposition of Undoped and Li Doped CuO Films and Thier Structural and Electrical Properties Hideyuki Okada, Tomoaki Terasako, Kenji Gochoh, Naoya Hayashimoto (Ehime Univ.) ED2018-43 CPM2018-77 LQE2018-97 |
Undoped and Li-doped CuO films were grown on Au seed layers by chemical bath deposition (CBD) using the mixed aqueous so... [more] | ED2018-43 CPM2018-77 LQE2018-97 pp.49-54 |
| ED, LQE, CPM | 2018-11-30 10:25 |
Aichi | Nagoya Inst. tech. | Chemical Bath Deposition of ZnO Nanorods on GZO Seed Layers and Formation of PEDOT:PSS/ZnO Nanorods Heterojunctions Shohei Obara, Tomoaki Terasako, Suguru Namba, Naoto Hshikuni (Ehime Univ.), Masakazu Yagi (Natl. Inst. Technol., Kagawa Coll.), Junichi Nomoto, Tetsuya Yamamoto (Kochi Univ. Tech.) ED2018-44 CPM2018-78 LQE2018-98 |
Vertically aligned zinc oxide (ZnO) nanorods (NRs) were successfully grown on ion-plated Ga doped ZnO (GZO) seed layers ... [more] | ED2018-44 CPM2018-78 LQE2018-98 pp.55-60 |
| ED, LQE, CPM | 2018-11-30 10:50 |
Aichi | Nagoya Inst. tech. | Fabrication of p-NiO/n-ZnO transparent solar cells by electrochemical deposition Miki Koyama, Masaya Ichimura (NIT) ED2018-45 CPM2018-79 LQE2018-99 |
Because of reported optical transparency and photovoltaic generation, an application of NiO/ZnO pn-junctions can be expe... [more] | ED2018-45 CPM2018-79 LQE2018-99 pp.61-64 |
| ED, LQE, CPM | 2018-11-30 11:15 |
Aichi | Nagoya Inst. tech. | Fabrication and evaluation of p-type Cu-AlOx thin film by photochemical deposition method Masanari Umemura, Masaya Ichimura (Nagoya Inst. Tech.) ED2018-46 CPM2018-80 LQE2018-100 |
AlOx has many physical properties suitable for electronic devices such as wide bandgap and high dielectric breakdown ele... [more] | ED2018-46 CPM2018-80 LQE2018-100 pp.65-70 |
| ED, LQE, CPM | 2018-11-30 12:40 |
Aichi | Nagoya Inst. tech. | GaN-based verticalcavity surfaceemitting lasers with buried SiO2 optical waveguide structures Iida Ryosuke (Meijo Univ.), Natsumi Hayashi, Wataru Muranaga, Syo Iwayama, Tetsuya Takeuchi, Satoshi Kamiyama, Motoaki Iwaya (Meijo Univ.), Isamu Akasaki (Meijo Univ./Nagoya Univ.) ED2018-47 CPM2018-81 LQE2018-101 |
We have investigated buried SiO2 optical waveguide structures towards low threshold current in GaN-based vertical cavity... [more] | ED2018-47 CPM2018-81 LQE2018-101 pp.71-74 |
| ED, LQE, CPM | 2018-11-30 13:05 |
Aichi | Nagoya Inst. tech. | Theoretical and Experimental Studies on Potential Fluctuation in InGaN Quantum-Well Structures Takashi Fujita, Shigeta Sakai, Yuma Ikeda, Atsushi A. Yamaguchi (Kanazawa Inst. Tech.), Yuya Kanitani, Shigetaka Tomiya (Sony) ED2018-48 CPM2018-82 LQE2018-102 |
The bandgap energy of InGaN alloy materials can be controlled by changing their alloy composition. Since the composition... [more] | ED2018-48 CPM2018-82 LQE2018-102 pp.75-78 |
| ED, LQE, CPM | 2018-11-30 13:30 |
Aichi | Nagoya Inst. tech. | A new method to evaluate the degree of potential fluctuation in InGaN quantum-well laser diodes by optical-pump stimulated-emission measurements Itsuki Oshima, Yuma Ikeda, Shigeta Sakai, A. A. Yamaguchi (Kanazawa Inst. tec.), Yuya Kanitani, Shigetaka Tomiya (Sony) ED2018-49 CPM2018-83 LQE2018-103 |
It is well-known that the characteristics of InGaN quantum-well (QW) laser diodes are strongly affected by the potential... [more] | ED2018-49 CPM2018-83 LQE2018-103 pp.79-82 |
| ED, LQE, CPM | 2018-11-30 14:05 |
Aichi | Nagoya Inst. tech. | Quality improvement and characteristic evaluations of sputter-deposited a-plane AlN on r-plane sapphire Ryo Fukuta, Kanako Shojiki, Jiang Nan, Kenjiro Uesugi, Yusuke Hayashi, Xiao Shiyu, Hideto Miyake (Mie Univ.) ED2018-50 CPM2018-84 LQE2018-104 |
[more] | ED2018-50 CPM2018-84 LQE2018-104 pp.83-86 |
| ED, LQE, CPM | 2018-11-30 14:30 |
Aichi | Nagoya Inst. tech. | Recent Progress towards realizing GaN/AlGaN Quantum Cascade Lasers Ke Wang, Li Wang, Lin Tsung Tse, Hideki Hirayama (RIKEN) ED2018-51 CPM2018-85 LQE2018-105 |
The potential GaN/AlGaN THz QCL has been analyzed theoretically in details. Room temperature THz lasing is predicted and... [more] | ED2018-51 CPM2018-85 LQE2018-105 pp.87-90 |
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