| Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
| SDM, ED |
2007-02-01
13:30 |
Hokkaido |
|
Physics-based SPICE modeling of triple barrier resonant tunneling diodes
Naoya Asaoka, Michihiko Suhara, Tsugunori Okumura (Tokyo Metropolitan Univ.) |
[more] |
ED2006-240 SDM2006-228
pp.1-6 |
| SDM, ED |
2007-02-01
13:50 |
Hokkaido |
|
Analysis on Resonant-Tunneling 4RTD Logic Gate Operation
Hiroki Okuyama, Kentaro Sugawara, Tomohiko Ebata, Takao Waho (Sophia Univ.) |
[more] |
ED2006-241 SDM2006-229
pp.7-12 |
| SDM, ED |
2007-02-01
14:10 |
Hokkaido |
|
A resonant tunneling diode pair oscillator for high power operation
Koichi Maezawa (Univ. of Toyama), Yohei Ookawa, Shigeru Kishimoto, Takashi Mizutani (Nagoya Univ.) |
High power operation was demonstrated for the novel RTD oscillator circuit fabricated with metamorphic RTDs. The circuit... [more] |
ED2006-242 SDM2006-230
pp.13-16 |
| SDM, ED |
2007-02-01
14:45 |
Hokkaido |
|
[Invited Talk]
SiGe Quantum Effect Devices
Yoshiyuki Suda, Hirotaka Maekawa, Yoshihiro Sano, Youichi Takahashi, Tadamasa Kobayashi, Hiroaki Hanafusa (TUAT) |
We are developing SiGe resonant tunneling diodes and an artificially positioned Ge dot array for light communication sys... [more] |
ED2006-243 SDM2006-231
pp.17-22 |
| SDM, ED |
2007-02-01
15:25 |
Hokkaido |
|
Theoretical analysis of fluoride-based intersubband transition lasers on Si substrate
Keisuke Jinen, Kaoru Uchida, Shinji Kodaira (Tokyo Inst. Tech.), Masahiro Watanabe, Masahiro Asada (Tokyo Inst. Tech./JST-SORST) |
[more] |
ED2006-244 SDM2006-232
pp.23-28 |
| SDM, ED |
2007-02-01
16:00 |
Hokkaido |
|
Investigation of A Novel Logic Circuit Implementation Scheme Utilizing Topological Correlation between Logic Graph by Decision Diagram and Nanowire Network Structures
Seiya Kasai, Tatsuya Nakamura, Yuta Shiratori (Hokkaido Univ.) |
This report presents study on a novel scheme to implement logic information processing function on nanowire network stru... [more] |
ED2006-245 SDM2006-233
pp.29-34 |
| SDM, ED |
2007-02-01
16:20 |
Hokkaido |
|
Single-electron device using Si nanodot array and multi-input gates
Takuya Kaizawa, Masashi Arita (Hokkaido Univ.), Akira Fujiwara, Kenji Yamazaki, Yukinori Ono (NTT), Hiroshi Inokawa (Shizuoka Univ.), Yasuo Takahashi (Hokkaido Univ.) |
[more] |
ED2006-246 SDM2006-234
pp.35-40 |
| SDM, ED |
2007-02-01
16:40 |
Hokkaido |
|
-
Tetsuya Hirose, Tetsuya Asai, Yoshihito Amemiya (Hokkaido Univ.) |
[more] |
ED2006-247 SDM2006-235
pp.41-45 |
| SDM, ED |
2007-02-02
09:30 |
Hokkaido |
|
Dependency of spin-orbit interaction in InAs HEMT on electric field perpendicular to the channel
Takashi Matsuda, Kanji Yo (Hokkaido Univ.) |
[more] |
ED2006-248 SDM2006-236
pp.47-50 |
| SDM, ED |
2007-02-02
09:50 |
Hokkaido |
|
Fabrication of epitaxial magnetic tunnel junctions with a Heusler alloy Co2Cr0.6Fe0.4Al thin film and a MgO tunnel barrier and their tunnel magnetoresistance characteristics
Takao Marukame, Takayuki Ishikawa, Kenichi Matsuda, Tetsuya Uemura, Masafumi Yamamoto (Hokkaido Univ.) |
[more] |
ED2006-249 SDM2006-237
pp.51-56 |
| SDM, ED |
2007-02-02
10:10 |
Hokkaido |
|
Non-volatile ternary content addressable memory using CoFe-based magnetic tunnel junction
Tetsuya Uemura, Takao Marukame, Kenichi Matsuda, Masafumi Yamamoto (Hokkaido Univ.) |
An epitaxial Co$_{50}$Fe$_{50}$/MgO/Co$_{50}$Fe$_{50}$ magnetic tunnel junction (MTJ) was fabricated and a relatively hi... [more] |
ED2006-250 SDM2006-238
pp.57-62 |
| SDM, ED |
2007-02-02
10:45 |
Hokkaido |
|
Transport property of nanographite patterned on Silicon dioxide
Keita Konishi, Takashi Matsuda, Youji Kan (Hokkaido Univ.) |
Graphene has been a new material of interest with two-dimensional structure. We measured the effect of gate electric fie... [more] |
ED2006-251 SDM2006-239
pp.63-66 |
| SDM, ED |
2007-02-02
11:05 |
Hokkaido |
|
Ballistic electron transport properties and rectification effects in InAs/AlGaSb mesoscopic structures
Masatoshi Koyama, Hiroshi Takahashi, Tatsuya Inoue, Toshihiko Maemoto, Shigehiko Sasa, Masataka Inoue (Osaka Inst. Tech.) |
[more] |
ED2006-252 SDM2006-240
pp.67-71 |
| SDM, ED |
2007-02-02
11:25 |
Hokkaido |
|
Fabrication and Characterization of Three-GaAs Nanowire-Junction Devices Controlled by Schottky Wrap Gates
Tatsuya Nakamura, Seiya Kasai, Yuta Shiratori, Tamotsu Hashizume (Hokkaido Univ.) |
[more] |
ED2006-253 SDM2006-241
pp.73-77 |
| SDM, ED |
2007-02-02
13:00 |
Hokkaido |
|
Cotunneling Current in Si Single-electron Transistor Based on Multiple Islands
Kensaku Ohkura, Tetsuya Kitade, Anri Nakajima (Hiroshima Univ.) |
Single-electron transistors (SETs) are promising candidates for use as basic elements of future low-power integrated cir... [more] |
ED2006-254 SDM2006-242
pp.79-82 |
| SDM, ED |
2007-02-02
13:20 |
Hokkaido |
|
Time-controlled single-electron transfer in single-gated asymmetric multiple tunnel junction arrays
Daniel Moraru (Shizuoka Univ.), Yukinori Ono (ＮＴＴ), Hiroshi Inokawa, Kiyohito Yokoi, Ratno Nuryadi, Hiroya Ikeda, Michiharu Tabe (Shizuoka Univ.) |
[more] |
ED2006-255 SDM2006-243
pp.83-88 |
| SDM, ED |
2007-02-02
13:40 |
Hokkaido |
|
Photon irradiation effects on Si multiple-tunnel-junction field-effect transistors
-- Sensing the presence of a single-charge in the substrate --
Zainal Burhanudin, Ratno Nuryadi, Michiharu Tabe (Shizuoka Univ.) |
[more] |
ED2006-256 SDM2006-244
pp.89-94 |