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Technical Committee on Electron Devices (ED) (Searched in: 2009)
Search Results: Keywords 'from:2009-06-11 to:2009-06-11'
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| ED | 2009-06-11 13:00 |
Tokyo | Removal of high dose Ion-Implanted photoresists with SPMless cleaning Toshiya Sato, Tamotsu Suzuki, Akihiko Tsukahara (FML Ltd), Kyota Morihira (Aqua Science Corp) |
[more] | ||
| ED | 2009-06-11 13:25 |
Tokyo | Evaluation of Cu-Inhibitor Residue for Post Cu-CMP Cleaning Atsushi Ito, Ken Harada, Yasuhiro Kawase, Fumikazu Mizutani (Mitsubishi Chem.), Makoto Hara, Hidemitsu Aoki, Chiharu Kimura, Takashi Sugino (Osaka Univ.)  ED2009-36 |
[more] | ED2009-36 pp.1-6 |
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| ED | 2009-06-11 13:50 |
Tokyo | Post CMP Cleaning by Megasonic Using Waveguide Tube Type Equipment Kazunari Suzuki (Kaijo Corp./Shibaura Inst. of Tech.), Ki Han, Shouichi Okano, Junichiro Soejima (Kaijo Corp.), Yoshikazu Koike (Shibaura Inst. of Tech.) ED2009-37 |
At single wafer processing, we proposed novel ultrasonic cleaning equipment using the waveguide tube made of quartz. At ... [more] | ED2009-37 pp.7-10 |
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| ED | 2009-06-11 14:30 |
Tokyo | Development of bevel brush scrubbing process Yoshiya Hagimoto, Hayato Iwamoto (Sony Corp.) ED2009-38 |
[more] | ED2009-38 pp.11-14 |
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| ED | 2009-06-11 14:55 |
Tokyo | Dependence of Characteristics of Methyl-BCN Film on RF Bias Takuro Masuzumi, Makoto Hara, Hidemitsu Aoki, Zhiming Lu, Chiharu Kimura, Takashi Sugino (Osaka Univ.) ED2009-39 |
[more] | ED2009-39 pp.15-20 |
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| ED | 2009-06-11 15:35 |
Tokyo | Electrical characterization of plasma-induced defects in GaN Seiji Nakamura, Koichi Hoshino, Shunsuke Ochiai, Michihiko Suhara, Tsugunori Okumura (Tokyo Metro Univ.) ED2009-40 |
[more] | ED2009-40 pp.21-25 |
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| ED | 2009-06-11 16:00 |
Tokyo | Characterization of ALD-Al2O3/AlGaN/GaN interfaces Chihoko Mizue, Yujin Hori (Hokkaido Univ.), Marcin Miczek (Silesian Univ. of Tech.), Tamotsu Hashizume (Hokkaido Univ.) ED2009-41 |
[more] | ED2009-41 pp.27-30 |
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| ED | 2009-06-11 16:25 |
Tokyo | Improvement in Device Performance in MIS AlGaN/GaN HFETs by Designing Insulator/AlGaN/GaN Structures Narihiko Maeda, Masanobu Hiroki, Takatomo Enoki (NTT), Takashi Kobayashi (NTT AT) ED2009-42 |
To improve the device performance of GaN-based Metal-Insulator-Semiconductor (MIS) heterostructure field-effect transist... [more] | ED2009-42 pp.31-36 |
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| ED | 2009-06-11 16:50 |
Tokyo | A study on low damage dry etching for AlGaN/GaN-HEMT Masahiko Kuraguchi, Miki Yumoto, Yoshiharu Takada, Kunio Tsuda (Toshiba Corp.) ED2009-43 |
Recessed gate structure is promising to improve GaN electric devices. Low damage dry etching technique is required to fo... [more] | ED2009-43 pp.37-40 |
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| ED | 2009-06-12 09:30 |
Tokyo | Theoretical Study of Band Structures and Electron Transport properties in Strained InAs and InSb Hiroyuki Nishino, Ichita Kawahira, Shinsuke Hara, Hiroki I. Fujishiro (Tokyo Univ. of Sci.) ED2009-44 |
Narrow band gap semiconductors such as InAs and InSb have been attracted much attention as possible channel materials to... [more] | ED2009-44 pp.41-46 |
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| ED | 2009-06-12 09:55 |
Tokyo | Anisotropy of two-dimensional electron mobilities in InGaAs/InP Masashi Akabori (JAIST/Research Centre Juelich), Thanh Quang Trinh, Masahiro Kudo (JAIST), Thomas Schaepers, Hilde Hardtdegen (Research Centre Juelich), Toshi-kazu Suzuki (JAIST) ED2009-45 |
[more] | ED2009-45 pp.47-50 |
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| ED | 2009-06-12 10:20 |
Tokyo | In-situ etching by CBr4 in InP heterojunction bipolar transistors with buried SiO2 wire Naoaki Takebe, Hiroaki Yamashita, Shinnosuke Takahashi, Hisashi Saito, Takashi Kobayashi, Yasuyuki Miyamoto, Kazuhito Furuya (Tokyo Inst. of Tech.) ED2009-46 |
In order to obtain high-speed InP heterojunction bipolar transistors (HBTs), it is necessary to reduce the base-collecto... [more] | ED2009-46 pp.51-55 |
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| ED | 2009-06-12 11:00 |
Tokyo | Electric characteristics of recessed gate MIS-AlGaN/GaN-HEMT with a thermal CVD SiN gate insulator film. Toshiharu Marui, Shinichi Hoshi, Fumihiko Toda, Yoshiaki Morino, Masanori Itoh, Hideyuki Okita, Isao Tamai, Shohei Seki (Oki Electric Industry Co.,Ltd.) ED2009-47 |
Normally-off characteristics are needed from the viewpoint of safety when AlGaN/GaN-HEMT applies for the high power swit... [more] | ED2009-47 pp.57-62 |
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| ED | 2009-06-12 11:25 |
Tokyo | Effect of Epitaxial Layer Design on Drain Leakage Current for Millimeter-Wave GaN-HEMT Atsushi Yamada, Kozo Makiyama, Toshihiro Ohki, Masahito Kanamura, Kazukiyo Joshin, Kenji Imanishi (Fujitsu and Fujitsu Labs.), Naoki Hara (Fujitsu Labs.), Toshihide Kikkawa (Fujitsu and Fujitsu Labs.) ED2009-48 |
In this paper, GaN channel and AlGaN buffer layer structure in the GaN-HEMT was optimized to achieve a good balance betw... [more] | ED2009-48 pp.63-67 |
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| ED | 2009-06-12 11:50 |
Tokyo | Influence of SiC Substrate Misorientation on AlGaN/GaN HEMTs Performance Keiichi Matsushita, Hiroyuki Sakurai, Jeoungchill Shim, Kazutaka Takagi, Hisao Kawasaki, Yoshiharu Takada, Kunio Tsuda (Toshiba Corp.) ED2009-49 |
[more] | ED2009-49 pp.69-72 |
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