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Technical Committee on Silicon Device and Materials (SDM) (Searched in: 2017)
Search Results: Keywords 'from:2017-11-09 to:2017-11-09'
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| SDM | 2017-11-09 10:00 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Multri-Physics Simulation of GaN MOVPE Growth Kenji Shiraishi, Kazuki Sekiguchi, Kenta Chokawa, Hiroki Shirakawa, Kento Kawakami, Yoshihiro Yamamoto, Masaaki Araidai, Naoya Okamoto, Katsumori Yoshimatsu (Nagoya Univ.), Yoshihiro Kangawa, Koichi Kakimoto (Kyushu Univ.)  SDM2017-61 |
In conventional GaN growth simulations, it has been believed that tri-methyl-gallium (TMG) first react with ammonia form... [more] | SDM2017-61 pp.1-4 |
| SDM | 2017-11-09 11:00 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
SISPAD 2017 Review (1) Akira Hiroki (Kyoto Inst. Tech.) SDM2017-62 |
[more] | SDM2017-62 pp.5-10 |
| SDM | 2017-11-09 13:05 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Simple and efficient approach to improve hot carrier immunity of a p-LDMOSFET Atsushi Sakai, Katsumi Eikyu (REL), Fujii Hiroki, Takahiro Mori (RSMC), Yutaka Akiyama, Yasuo Yamaguchi (REL) SDM2017-63 |
This paper proposes a simple and efficient method to improve hot carrier (HC) immunity of p-channel LDMOSFET without deg... [more] | SDM2017-63 pp.11-14 |
| SDM | 2017-11-09 13:30 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Impurity Diffusion Modeling in SiC Masashi Uematsu (Keio Univ.) SDM2017-64 |
SiC is an attractive material for the application of high-power electronic devices. In this article, the current status ... [more] | SDM2017-64 pp.15-20 |
| SDM | 2017-11-09 14:30 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Characterization and modeling of SiC power MOSFET Takashi Sato, Kazuki Oishi, Masayuki Hiromoto (Kyoto Univ.), Michihiro Shintani (NAIST) SDM2017-65 |
(To be available after the conference date) [more] | SDM2017-65 pp.21-26 |
| SDM | 2017-11-09 15:40 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
GaN MOS capacitance simulation considering deep traps Koichi Fukuda, Hidehiro Asai, Junichi Hattori, Mitsuaki Shimizu (AIST), Tamotsu Hashizume (Hokkaido Univ.) SDM2017-66 |
Transient mode device simulation is applied to obtain capacitances of GaN MOS capacitors including deep level traps, and... [more] | SDM2017-66 pp.27-32 |
| SDM | 2017-11-10 10:00 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
SISPAD 2017 Review (2) Takashi Kurusu (TMC) SDM2017-67 |
[more] | SDM2017-67 pp.33-36 |
| SDM | 2017-11-10 11:00 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Fundamental Aspects of Semiconductor Device Modeling associated with Discrete Impurities
-- Random Dopant Fluctuations and Self-Averaging -- Nobuyuki Sano (Univ. Tsukuba) SDM2017-68 |
The classical and quantum effects associated with discrete impurities on transport characteristics and device modeling i... [more] | SDM2017-68 pp.37-42 |
| SDM | 2017-11-10 13:30 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Quantum Transport Simulation of Ultra-Small Transistors Nobuya Mori, Gennady Mil'nikov (Osaka Univ), Junichi Iwata, Atsushi Oshiyama (Univ of Tokyo) SDM2017-69 |
We have developed a quantum transport simulator for ultra-small transistors. The simulator is based on a nonequilibrium... [more] | SDM2017-69 pp.43-46 |
| SDM | 2017-11-10 14:30 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
An Accurate Metric to Control Time Step of Transient Device Simulation by Matrix Exponential Method Shigetaka Kumashiro, Tatsuya Kamei, Akira Hiroki, Kazutoshi Kobayashi (KIT) SDM2017-70 |
An accurate metric for the time step control in the power device transient simulation is proposed. This metric contains ... [more] | SDM2017-70 pp.47-52 |
| SDM | 2017-11-10 15:40 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
A SPICE-compatible SG-MONOS model for 28nm embedded flash macro design considering the parasitic resistance caused by trapped charges Risho Koh, Mitsuru Miyamori, Katsumi Tsuneno, Tetsuya Muta, Yoshiyuki Kawashima (Renesas electronics) SDM2017-71 |
A SPICE-compatible model which reproduces the read current of split-gate MONOS (SG-MONOS) non-volatile memory cell has b... [more] | SDM2017-71 pp.53-58 |
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