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Technical Committee on Silicon Device and Materials (SDM) (Searched in: 2009)
Search Results: Keywords 'from:2009-10-29 to:2009-10-29'
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| SDM | 2009-10-29 14:00 |
Miyagi | Tohoku University | High current drivability transistors with optimized silicides for n+- and p+-Si Yukihisa Nakao, Rihito Kuroda, Hiroaki Tanaka, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ)  SDM2009-117 |
Formation process of silicide/silicon contact with low contact resistance in the source/drain regions has been developed... [more] | SDM2009-117 pp.1-6 |
| SDM | 2009-10-29 14:30 |
Miyagi | Tohoku University | A study on Improvement of Thermal Stability for PtSi Alloying with Hf Utilizing Two-Step Silicidation Process Jun Gao, Jumpei Ishikawa, Shun-ichiro Ohmi (Tokyo Inst. of Tech.) SDM2009-118 |
To improve the thermal stability of PtxHfySi formed at 400℃/60 min, 2-step silicidation process was investigated. By usi... [more] | SDM2009-118 pp.7-10 |
| SDM | 2009-10-29 15:00 |
Miyagi | Tohoku University | HfN/HfON Gate Stacks by ECR Sputtering Takahiro Sano, Takato Ohnishi, Shun-ichiro Ohmi (Tokyo Inst. of Tech.) SDM2009-119 |
[more] | SDM2009-119 pp.11-14 |
| SDM | 2009-10-29 15:30 |
Miyagi | Tohoku University | Silicon Wafer Thinning Technology for Three-Dimensional Integrated Circuit by Wet Etching Kazuhiro Yoshikawa, Tomotsugu Ohashi, Tatsuro Yoshida, Takenao Nemoto, Tadahiro Ohmi (Tohoku Univ.) SDM2009-120 |
A three-dimensional integrated circuit is developed as an emerging technology in a semiconductor industry. The silicon w... [more] | SDM2009-120 pp.15-19 |
| SDM | 2009-10-29 16:15 |
Miyagi | Tohoku University | Tribological Study for Low Shear Force CMP Process on Damascene Interconnects Xun Gu, Takenao Nemoto (Tohoku Univ.), Yasa Adi Sampurno (Univ. of Arizona/Araca,Inc.), Jiang Cheng, Sian Theng (Araca,Inc.), Akinobu Teramoto (Tohoku Univ.), Ricardo Duyos Mateo, Leonard Borucki (Araca,Inc.), Yun Zhuang, Ara Philipossian (Univ. of Arizona/Araca,Inc.), Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.) SDM2009-121 |
[more] | SDM2009-121 pp.21-26 |
| SDM | 2009-10-29 16:45 |
Miyagi | Tohoku University | Current Voltage Characteristics of Si-MESFET on SOI Substrate Toshiyuki Abe, Yuichiro Tanushi, Shin-Ichiro Kuroki, Koji Kotani, Takashi Ito (Tohoku Univ.) SDM2009-122 |
We simulate current-voltage characteristics of scaled Si metal semiconductor field effect transistors (MESFETs) and show... [more] | SDM2009-122 pp.27-30 |
| SDM | 2009-10-29 17:15 |
Miyagi | Tohoku University | Statistical Analysis of Random Telegraph Signal Using a Large-Scale Array TEG with a Long Time Measurement Takafumi Fujisawa, Kenichi Abe, Syunichi Watabe, Naoto Miyamoto, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.) SDM2009-123 |
For the development of miniaturizing MOSFET and manufacturing low noise devices, it is important to suppress RTS noise. ... [more] | SDM2009-123 pp.31-36 |
| SDM | 2009-10-30 09:30 |
Miyagi | Tohoku University | An Analysis of Carrier Transfer in Conjugated Polymers by Luminescence Computational Chemistry Itaru Yamashita, Kazumi Serizawa, Hiroaki Onuma, Ai Suzuki, Ryuji Miura, Hideyuki Tsuboi, Nozomu Hatakeyama, Akira Endou, Hiromitsu Takaba, Momoji Kubo, Akira Miyamoto (Tohoku Univ) SDM2009-124 |
[more] | SDM2009-124 pp.37-38 |
| SDM | 2009-10-30 10:00 |
Miyagi | Tohoku University | Computational Simulation for High Performance Protecting Layer of Plasma Displays Kazumi Serizawa, Hiroaki Onuma (Tohoku Univ.), Hiromi Kikuchi (Tohoku Univ./Hiroshima Univ.), Kazuma Suesada, Masaki Kitagaki (Hiroshima Univ.), Itaru Yamashita, Ai Suzuki, Hideyuki Tsuboi, Nozomu Hatakeyama, Akira Endou, Hiromitsu Takaba, Momoji Kubo (Tohoku Univ.), Hiroshi Kajiyama (Hiroshima Univ.), Akira Miyamoto (Tohoku Univ.) SDM2009-125 |
In order to reduce the power requirement of plasma display panel, it is effective to increase the secondary electron emi... [more] | SDM2009-125 pp.39-40 |
| SDM | 2009-10-30 10:30 |
Miyagi | Tohoku University | Prediction of emission peak wavelength of Eu2+-doped phosphors using quantum chemistry and QSPR method Hiroaki Onuma, Itaru Yamashita, Kazumi Serizawa, Ai Suzuki, Hideyuki Tsuboi, Nozomu Hatakeyama, Akira Endou, Hiromitsu Takaba, Momoji Kubo, Akira Miyamoto (Tohoku Univ.) SDM2009-126 |
[more] | SDM2009-126 pp.41-42 |
| SDM | 2009-10-30 11:00 |
Miyagi | Tohoku University | Investigation of characteristics of pentacene-based MOSFETs structures Young-Uk Song, Shun-ichiro Ohmi, Hiroshi Ishiwara (Tokyo Inst. of Tech.) SDM2009-127 |
In order to realize organic devices with low operation voltage, we have fabricated thin pentacene-based metal-oxide-semi... [more] | SDM2009-127 pp.43-46 |
| SDM | 2009-10-30 11:30 |
Miyagi | Tohoku University | Crystallization of Amorphous Silicon Films on Glass Substrate by Heated Gas Beam Annealing Yuichiro Tanushi, Yosuke Kawano, Shin-Ichiro Kuroki, Koji Kotani (Tohoku Univ), Naomi Mura, Kimihisa Yamakami, Yuji Furumura (Philtech Inc.), Takashi Ito (Tohoku Univ) SDM2009-128 |
For a new novel method to crystallize amorphous silicon films on glass substrate, heated gas beam annealing method is pr... [more] | SDM2009-128 pp.47-50 |
| SDM | 2009-10-30 13:00 |
Miyagi | Tohoku University | Recovery from Reactive Ion Etching Damage in SiO2 Films Nobuhito Kawada, Satoshi Nagashima, Toru Ichikawa, Hiroshi Akahori (Toshiba Corp.) SDM2009-129 |
As the MOS device shrinkage progress, the influence of RIE(Reactive Ion Etching) damage becomes remarkable. Especially, ... [more] | SDM2009-129 pp.51-56 |
| SDM | 2009-10-30 13:30 |
Miyagi | Tohoku University | Low frequency noise in Si(100) and Si(110) p-channel MOSFETs Philippe Gaubert, Akinobu Teramoto, Tadahiro Ohmi (Tohoku Univ.) SDM2009-130 |
[more] | SDM2009-130 pp.57-62 |
| SDM | 2009-10-30 14:00 |
Miyagi | Tohoku University | A study on improvement of electrical characteristics for low temperature SiO2 film Hidenobu Nagashima, Hiroshi Akahori (TOSHIBA) SDM2009-131 |
The metal gate electrode is paid to attention as a low resistivity material in the MOS transistor as scaling progresses.... [more] | SDM2009-131 pp.63-67 |
| SDM | 2009-10-30 14:45 |
Miyagi | Tohoku University | Electrochemical Etching Processes of Semiconductors Kingo Itaya, Shinichirou Kobayashi, Rui Wen, Taketoshi Minato (Tohoku Univ.) SDM2009-132 |
Electrochemical etching processes of semiconductors have been investigated with atomic levels. Using electrochemical met... [more] | SDM2009-132 pp.69-73 |
| SDM | 2009-10-30 15:15 |
Miyagi | Tohoku University | Oxy-nitridation Simulation of Silicon Surface Using Antomated System of Ultra-Accelerated Quantum Chemical Molecular Dynamics Method Hideyuki Tsuboi, Ai Suzuki, Nozomu Hatakeyama, Akira Endou, Hiromitsu Takaba, Momoji Kubo, Akira Miyamoto (Tohoku Univ.) SDM2009-133 |
Using our newly developed automated system of ultra-accelerated quantum chemical molecular dynamics method, we have inve... [more] | SDM2009-133 pp.75-76 |
| SDM | 2009-10-30 15:45 |
Miyagi | Tohoku University | Study on compositional transition layers at SiO2/Si interface formed by radical oxidation Tomoyuki Suwa, Akinobu Teramoto, Tadahiro Ohmi, Takeo Hattori (Tohoku Univ.), Toyohiko Kinoshita, Takayuki Muro, Yukako Kato (JASRI) SDM2009-134 |
For clarifying the atomic structure of transition layer and valence band offset at Si/SiO2 interface formed by radical o... [more] | SDM2009-134 pp.77-80 |
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