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Search Results: Keywords 'from:2020-12-02 to:2020-12-02'
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| EID, SDM, ITE-IDY [detail] | 2020-12-02 10:00 |
Online | Online | Automation of characteristic measurement of amorphous oxide semiconductor memristors and their effects Ryo Sumida, Ayata Kurasaki, Mutumi Kimura (RU)  EID2020-1 SDM2020-35 |
[more] | EID2020-1 SDM2020-35 pp.1-4 |
| EID, SDM, ITE-IDY [detail] | 2020-12-02 10:15 |
Online | Online | Biological environment imitation experiment of artificial retina using thin film device Naoya Naito, Kouhei Toyoda (Ryukoku Univ.), Yoshio Okano (WetLab Corporation), Mutsumi Kimura (Ryukoku Univ.) EID2020-2 SDM2020-36 |
[more] | EID2020-2 SDM2020-36 pp.5-8 |
| EID, SDM, ITE-IDY [detail] | 2020-12-02 10:30 |
Online | Online | Characterization of amorphous Ga-Sn-O thin film thermoelectric conversion element Yuhei Yamamoto, Tatuya Aramaki, Ryo Ito, Mutumi Kimura (Ryukoku Univ.) EID2020-3 SDM2020-37 |
Most of the exhaust heat generated from factories, automobiles, PCs, etc. is unused. Thermoelectric conversion device ca... [more] | EID2020-3 SDM2020-37 pp.9-12 |
| EID, SDM, ITE-IDY [detail] | 2020-12-02 11:25 |
Online | Online | Stacked cross-point memory of synaptic elements using IGZO thin film Etsuko Iwagi (RU), Takumi Tsuno (NAIST), Mutsumi Kimura (RU) EID2020-4 SDM2020-38 |
We conducted research and development of a large hardware neural network by using oxide semiconductors of In-Ga-Zn-O (IG... [more] | EID2020-4 SDM2020-38 pp.13-16 |
| EID, SDM, ITE-IDY [detail] | 2020-12-02 11:40 |
Online | Online | Evaluation of dielectric properties of ferroelectric thin films for neural networks Yuma Ishisaki, Hiroki Umemura, Daiki Matsukawa, Mutsumi Kimura (RU), Eisuke Tokumitsu (JAIST), Kenichi Haga, Toshihiro Doi (MMC) EID2020-5 SDM2020-39 |
The neuromorphic system is a hardware-level biosimulation system that implements neuron and synaptic elements. It has th... [more] | EID2020-5 SDM2020-39 pp.17-20 |
| EID, SDM, ITE-IDY [detail] | 2020-12-02 11:55 |
Online | Online | Investigation of oxide semiconductor thin film synapse using STDP learning method Tetsuya Katagiri, Daiki Yamakawa, Kenta Yatida, Kazuki Morigaki, Mutsumi Kimura (Ryukoku Univ.) EID2020-6 SDM2020-40 |
Neuromorphic hardware is expected as low power consumption and high performance hardware that does not have the power co... [more] | EID2020-6 SDM2020-40 pp.21-24 |
| EID, SDM, ITE-IDY [detail] | 2020-12-02 12:10 |
Online | Online | Brain type system using IGZO thin film synapses Yuki Onishi, Yuki Shibayama, Daiki Yamakawa (Ryukoku Univ.), Hiroya Ikeda, Yasuhiko Nakajima (NAIST), Mutumi Kimura (Ryukoku Univ./NAIST) EID2020-7 SDM2020-41 |
Neural networks have been actively studied as a future electronics technology. However, since the von Neumann-type arith... [more] | EID2020-7 SDM2020-41 pp.25-28 |
| EID, SDM, ITE-IDY [detail] | 2020-12-02 13:40 |
Online | Online | Synthesis of Single Crystal BaTiO3 Nanoparticles for Self-Assembly Technique Misa Yamasaki, Masaki Yamaguchi (Shibaura Inst. of Tech.) EID2020-8 SDM2020-42 |
In this study, barium titanate single crystal fine particles used for inkjet-printing method were prepared by hydrotherm... [more] | EID2020-8 SDM2020-42 pp.29-34 |
| EID, SDM, ITE-IDY [detail] | 2020-12-02 14:00 |
Online | Online | Improvement of Al2O3/GaN MOS Characteristics using Bilayer Structure Sho Sonehara, Mutsunori Uenuma, Yukiharu Uraoka (NAIST) EID2020-9 SDM2020-43 |
[more] | EID2020-9 SDM2020-43 pp.35-36 |
| EID, SDM, ITE-IDY [detail] | 2020-12-02 14:30 |
Online | Online | [Special Invited Talk]
Defects control in oxide semiconductors at low-temperature and its application to flexible devices Yusaku Magari, Mamoru Furuta (Kochi Univ. of Technol.) EID2020-10 SDM2020-44 |
High-performance In–Ga–Zn–O (IGZO) Schottky diodes (SDs) were fabricated using hydrogenated IGZO (IGZO:H) at a maximum p... [more] | EID2020-10 SDM2020-44 pp.37-41 |
| EID, SDM, ITE-IDY [detail] | 2020-12-02 15:00 |
Online | Online | Coexistence of digital and analog resistive switching in Ta2O5-based ReRAM cells with TiN electrodes. Kazutaka Yamada, Tsunenobu Kimoto (Kyoto Univ.), Yusuke Nishi (Kyoto Univ./NIT, Maizuru College) EID2020-11 SDM2020-45 |
In this study, we have investigated the resistive switching (RS) characteristics of Ni/Ta2O5/TiN stack structure devices... [more] | EID2020-11 SDM2020-45 pp.42-45 |
| EID, SDM, ITE-IDY [detail] | 2020-12-02 15:20 |
Online | Online | Optimization of double-layered ReRAM using Ga-Sn-O thin film Ayata Kurasaki, Kaito Hashimoto, Ryo Sumida, Shihori Akane, Daisuke Makioka, Sumio Sugisaki, Mutsumi Kimura (Ryukoku Univ.) EID2020-12 SDM2020-46 |
[more] | EID2020-12 SDM2020-46 pp.46-49 |
| EID, SDM, ITE-IDY [detail] | 2020-12-02 15:35 |
Online | Online | Phase Change Random Access memory using Cu2GeTe3 Shihori Akane (Ryukoku Univ), Isao Horiuchi (KOA Corp), Mutsumi Kimura (Ryukoku Univ) EID2020-13 SDM2020-47 |
We are conducting research on Phase Change Random Access Memory (PCRAM) using “Cu2GeTe3: Copper-Germanium-Tellurium (CGT... [more] | EID2020-13 SDM2020-47 pp.50-53 |
| EID, SDM, ITE-IDY [detail] | 2020-12-02 16:30 |
Online | Online | Ferroelectric gate thin film transistor using oxide semiconductor Ga-Sn-O Tomoki Fukui, Kouki Nakagawa, Mutsumi Kimura (Ryukoku Univ) EID2020-14 SDM2020-48 |
We fabricated a ferroelectric-gate thin-film transistor (FeTFT) with an amorphous Ga-Sn-O (GTO) channel and a ferroelect... [more] | EID2020-14 SDM2020-48 pp.54-57 |
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