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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
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Committee Date Time Place Paper Title / Authors Abstract Paper #
ED, SDM, CPM 2021-05-27
15:40		 Online Online Fabrication and Evaluation of Single-Electron Devices Formed by Single-Layered Fe Nanodot Array
Takayuki Gyakushi, Yuki Asai, Beommo Byun, Ikuma Amano, Atsushi Tsurumaki-Fukuchi, Masashi Arita, Yasuo Takahashi (Hokkaido Univ.) ED2021-6 CPM2021-6 SDM2021-17		 Recently, novel information processing techniques using nanoscale devices, such as neural networks and reconfigurable co... [more] ED2021-6 CPM2021-6 SDM2021-17
pp.23-26
ED, SDM 2017-02-24
10:00		 Hokkaido Centennial Hall, Hokkaido Univ. Fabrication and evaluation of silicon triple quantum dots with a compact device structure
Takafumi Uchida, Atsushi Tsurumaki-Fukuchi, Masashi Arita (IST. Hokkaido Univ.), Akira Fujiwara (NTT BRL), Yasuo Takahashi (IST. Hokkaido Univ.) ED2016-130 SDM2016-147		 Silicon-based multiple quantum-dot with a scalable gate architecture is a promising candidate for quantum information pr... [more] ED2016-130 SDM2016-147
pp.1-6
SDM, ED 2015-02-05
15:05		 Hokkaido Hokkaido Univ. Highly functionality of three-terminal nanodot array for multi-input and multi-output devices
Isamu Yoshioka, Hikaru Satoh, Takafumi Uchida, Atsushi Tsurumaki-Fukuchi, Masashi Arita (Hokkaido Univ.), Akira Fujiwara (NTT), Yasuo Takahashi (Hokkaido Univ.) ED2014-141 SDM2014-150		 Nanodot-array single-electron devices with multi-inputs and multi-outputs achieve higher functionality that conventional... [more] ED2014-141 SDM2014-150
pp.17-22
ED, SDM 2007-06-25
13:00		 Overseas Commodore Hotel Gyeongju Chosun, Gyeongju, Korea [Invited Talk] Si single-electron FETs for single-photon detection
Michiharu Tabe, Ratno Nuryadi, Zainal Burhanudin (Shizuoka Univ.) 		We have studied three research aspects as key technologies for breakthrough in Si devices, i.e., time-controlled transfe... [more]
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