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All Technical Committee Conferences (Searched in: All Years)
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Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
ED, SDM, CPM |
2021-05-27 15:40 |
Online |
Online (Online) |
Fabrication and Evaluation of Single-Electron Devices Formed by Single-Layered Fe Nanodot Array Takayuki Gyakushi, Yuki Asai, Beommo Byun, Ikuma Amano, Atsushi Tsurumaki-Fukuchi, Masashi Arita, Yasuo Takahashi (Hokkaido Univ.) ED2021-6 CPM2021-6 SDM2021-17 |
Recently, novel information processing techniques using nanoscale devices, such as neural networks and reconfigurable co... [more] |
ED2021-6 CPM2021-6 SDM2021-17 pp.23-26 |
ED, SDM |
2017-02-24 10:00 |
Hokkaido |
Centennial Hall, Hokkaido Univ. (Hokkaido) |
Fabrication and evaluation of silicon triple quantum dots with a compact device structure Takafumi Uchida, Atsushi Tsurumaki-Fukuchi, Masashi Arita (IST. Hokkaido Univ.), Akira Fujiwara (NTT BRL), Yasuo Takahashi (IST. Hokkaido Univ.) ED2016-130 SDM2016-147 |
Silicon-based multiple quantum-dot with a scalable gate architecture is a promising candidate for quantum information pr... [more] |
ED2016-130 SDM2016-147 pp.1-6 |
SDM, ED |
2015-02-05 15:05 |
Hokkaido |
Hokkaido Univ. (Hokkaido) |
Highly functionality of three-terminal nanodot array for multi-input and multi-output devices Isamu Yoshioka, Hikaru Satoh, Takafumi Uchida, Atsushi Tsurumaki-Fukuchi, Masashi Arita (Hokkaido Univ.), Akira Fujiwara (NTT), Yasuo Takahashi (Hokkaido Univ.) ED2014-141 SDM2014-150 |
Nanodot-array single-electron devices with multi-inputs and multi-outputs achieve higher functionality that conventional... [more] |
ED2014-141 SDM2014-150 pp.17-22 |
ED, SDM |
2007-06-25 13:00 |
Overseas |
Commodore Hotel Gyeongju Chosun, Gyeongju, Korea (Overseas) |
[Invited Talk]
Si single-electron FETs for single-photon detection Michiharu Tabe, Ratno Nuryadi, Zainal Burhanudin (Shizuoka Univ.) |
We have studied three research aspects as key technologies for breakthrough in Si devices, i.e., time-controlled transfe... [more] |
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