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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
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Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2022-10-19
16:30		 Online Online [Invited Talk] Reliability improvement of SiC MOSFET by high-temperature CO2 annealing
Takuji Hosoi (Kwansei Gakuin Univ.), Takayoshi Shimura, Heiji Watanabe (Osaka Univ.) SDM2022-62		 Threshold voltage instability is one of the reliability concerns for SiC MOSFETs. NO post-oxidation annealing (NO-POA) i... [more] SDM2022-62
pp.34-37
SDM 2015-01-27
15:30		 Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Accurate Prediction of PBTI Lifetime in N-type Fin-Channel High-k Tunnel FETs
Wataru Mizubayashi, Takahiro Mori, Koichi Fukuda, Yongxun Liu, Takashi Matsukawa, Yuki Ishikawa, Kazuhiko Endo, Shinichi Ohuchi, Junichi Tsukada, Hiromi Yamauchi, Yukinori Morita, Shinji Migita, Hiroyuki Ota, Meishoku Masahara (AIST) SDM2014-143		 The positive bias temperature instability (PBTI) characteristics for n-type fin-channel tunnel FETs (TFETs) with high-k ... [more] SDM2014-143
pp.33-36
ICD, SDM 2014-08-05
14:55		 Hokkaido Hokkaido Univ., Multimedia Education Bldg. Initial Frequency Degradation on Ring Oscillators in 65-nm SOTB Process Caused by Plasma-Induced Damage
Azusa Oshima, Ryo Kishida, Michitarou Yabuuchi, Kazutoshi Kobayashi (KIT) SDM2014-79 ICD2014-48		 Reliability issues, such as plasma-induced damage (PID) and Bias Temperature
Instability (BTI), become dominant on inte... [more]		 SDM2014-79 ICD2014-48
pp.93-98
SDM 2013-12-13
17:00		 Nara NAIST A Study of Threshold Voltage Instability in 4H-SiC MOSFETs with POCl3- and NO-Annealed Gate Oxides
Natsuko Kanafuji, Hiroshi Yano, Ai Osawa, Tomoaki Hatayama, Takashi Fuyuki (NAIST) SDM2013-132		 4H-SiC MOSFETs are expected as low loss power devices with high blocking voltage. Threshold voltage instability is one o... [more] SDM2013-132
pp.97-100
NLP 2006-07-04
10:20		 Ishikawa Kanazawa Univ. Predicting Voltage Instability of Power System Based on Hybrid System Reachability Analysis
Yoshihiko Susuki, Takashi Hikihara (Kyoto Univ.) 		This paper shows a numerical method for predicting voltage instability of a power system based on reachability analysis ... [more] NLP2006-36
pp.13-18
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