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Technical Committee on Silicon Device and Materials (SDM) (Searched in: 2014)
Search Results: Keywords 'from:2014-06-19 to:2014-06-19'
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| SDM | 2014-06-19 09:30 |
Aichi | VBL, Nagoya Univ. | Process Design of High-k/Ge Gate Stack for Improving Thermal Stability and Interface Properties in Sub-1-nm Regime Ryohei Asahara, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe (Osaka Univ.)  SDM2014-43 |
Suppression of GeOx formation and Ge diffusion into high-k layer is important to develop sub-1-nm EOT metal/high-k gate ... [more] | SDM2014-43 pp.1-5 |
| SDM | 2014-06-19 09:50 |
Aichi | VBL, Nagoya Univ. | Investigation of Al-PMA Effect on Al2O3/GeOx/Ge Gate Stack Yuta Nagatomi, Yuichi Nagaoka, Keisuke Yamamoto, Dong Wang, Hiroshi Nakashima (Kyushu Univ.) SDM2014-44 |
We investigated the Al-PMA effect on Al2O3/GeOX/Ge gate stacks. The Al-PMA is effective for Al2O3/GeOX/Ge gate stacks, s... [more] | SDM2014-44 pp.7-10 |
| SDM | 2014-06-19 10:10 |
Aichi | VBL, Nagoya Univ. | Alleviation of Fermi level pinning of Sn/Ge contact Akihiro Suzuki, Shunsuke Asaba, Jun Yokoi, Masashi Kurosawa, Kimihiko Kato, Mitsuo Sakashita, Noriyuki Taoka, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) SDM2014-45 |
[more] | SDM2014-45 pp.11-16 |
| SDM | 2014-06-19 10:30 |
Aichi | VBL, Nagoya Univ. | Stability of vacancy defect around metal/Ge interfaces; first-principles study Shogo Sasaki, Takashi Nakayama (Chiba Univ.) SDM2014-46 |
It is well known that Ge has high density of vacancy defects compared to Si. Vacancy defects often change electronic pro... [more] | SDM2014-46 pp.17-20 |
| SDM | 2014-06-19 11:05 |
Aichi | VBL, Nagoya Univ. | Control of Stacking Fault Structures in Ge1-xSnx Epitaxial Growth Takanori Asano (Nagoya Univ.), Noriyuki Taoka (IHP Microelectronics), Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) SDM2014-47 |
Ge or Ge1－xSnx layer with (110) surface has attracted much attentions for Ge multi-gate MOS transistors. For forming a h... [more] | SDM2014-47 pp.21-25 |
| SDM | 2014-06-19 11:25 |
Aichi | VBL, Nagoya Univ. | Efficient Activation of As+ Ion implantation into Ge substrate for Formation of Low-Resistive Shallow Junction Shinya Hamada, Hideki Murakami, Takahiro Ono, Kuniaki Hashimoto (Hiroshima Univ.), Akio Ohta (Nagoya Univ.), Hiroaki Hanafusa, Seiichiro Higashi (Hiroshima Univ.), Seiichi Miyazaki (Nagoya Univ.) SDM2014-48 |
To improve the activation of As implanted into Ge substrate, we have studied the impact of substrate temperature on As+ ... [more] | SDM2014-48 pp.27-30 |
| SDM | 2014-06-19 11:45 |
Aichi | VBL, Nagoya Univ. | Characteristics of charge trap flash memory with Al2O3/(Ta/Nb)Ox/Al2O3 multi-layer by ALD method Toshihide Nabatame, Akihiko Ohi (NIMS), Kazuhiro Ito, Makoto Takahashi (Osaka Univ.), Toyohiro Chikyow (NIMS) SDM2014-49 |
We studied characteristics of the p-Si/SiO2/Al2O3-TL/(Ta/Nb)Ox-CTL/Al2O3-BL/Pt capacitors, fabricated by using ALD at 20... [more] | SDM2014-49 pp.31-35 |
| SDM | 2014-06-19 12:05 |
Aichi | VBL, Nagoya Univ. | Study on Resistance-Switching of Si-rich Oxide Films embedding Mn Nanodots Takashi Arai (Nagoya Univ.), Akio Ohta (Nagoya Univ. VBL), Katsunori Makihara, Seiichi Miyazaki (Nagoya Univ.) SDM2014-50 |
[more] | SDM2014-50 pp.37-42 |
| SDM | 2014-06-19 13:25 |
Aichi | VBL, Nagoya Univ. | Low Temperature Fabrication Processes for p-Cu2O/SiOx/n-SiC structured pn memory diode Atsushi Yamashita, Takahiro Tsukamoto, Yoshiyuki Suda (Tokyo Univ. of Agric. & Tech.) SDM2014-51 |
We have studied low-temperature fabrication processes for our previously proposed two-terminal resistive nonvolatile p-... [more] |
SDM2014-51 pp.43-47 |
| SDM | 2014-06-19 13:45 |
Aichi | VBL, Nagoya Univ. | Atomistic study of Nitrogen and Hydrogen incorporation effect in Si-rich SiO2 Hiroki Shirakawa, Keita Yamaguchi (Univ. of Tsukuba), Katsumasa Kamiya (KAIT), Kenji Shiraishi (Nagoya Univ.) SDM2014-52 |
Charge trapping memories such as the MONOS (Metal-Oxide-Nitride-Oxide-Semiconductor) type memories naturally have the ch... [more] | SDM2014-52 pp.49-53 |
| SDM | 2014-06-19 14:05 |
Aichi | VBL, Nagoya Univ. | Theoretical Study of Electron Transportation in NanoScale Channel Genki Fujita, Taro Shiokawa (Univ. of Tsukuba), Yukihiro Takada (Tokyo Univ of Science), Satoru Konabe (Univ. of Tsukuba), Masakazu Muraguchi (Tohoku Univ.), Takahiro Yamamoto (Tokyo Univ. of Science), Tetsuo Endoh (Tohoku Univ.), Yasuhiro Hatsugai (Univ. of Tsukuba), Kenji Shiraishi (Nagoya Univ.) SDM2014-53 |
Numerical calculation of electron transportation considering long-range Coulomb interaction in Nanoscale channel [more] | SDM2014-53 pp.55-58 |
| SDM | 2014-06-19 14:40 |
Aichi | VBL, Nagoya Univ. | [Invited Lecture]
Electronic and opto-electronic devices using III-V nanowire/Si heterojunctions Katsuhiro Tomioka (Hokkaido Univ./JST), Takashi Fukui (Hokkaido Univ.) SDM2014-54 |
[more] | SDM2014-54 pp.59-63 |
| SDM | 2014-06-19 15:00 |
Aichi | VBL, Nagoya Univ. | [Invited Lecture]
Ultra-sharp metal-to-insulator transition in a single crystal VO2 thin film by controlling the local stress of transition Takeaki Yajima, Yuma Ninomiya, Tomonori Nishimura, Kosuke Nagashio, Akira Toriumi (Univ. of Tokyo) SDM2014-55 |
[more] | SDM2014-55 pp.65-67 |
| SDM | 2014-06-19 15:20 |
Aichi | VBL, Nagoya Univ. | [Invited Lecture]
Local Characterization of Resistive Switching Properties of Si-rich Oxide Thin Films by Using Ni Nanodot Electrode Akio Ohta, Chong Liu, Takashi Arai, Daichi Takeuchi, Hai Zhang, Katsunori Makihara, Seiichi Miyazaki (Nagoya Univ.) SDM2014-56 |
[more] | SDM2014-56 pp.69-73 |
| SDM | 2014-06-19 15:40 |
Aichi | VBL, Nagoya Univ. | [Invited Lecture]
Temperature Dependence of Resistance of Conductive Nano-filament in Resistance Change Memory Shintaro Otsuka, Yoshifumi Hamada, Tomohiro Shimizu, Shoso Shingubara (Kansai Univ.) SDM2014-57 |
Resistance change memory is expected to become one of next generation non-volatile memories. However, there is a questio... [more] | SDM2014-57 pp.75-78 |
| SDM | 2014-06-19 16:15 |
Aichi | VBL, Nagoya Univ. | [Invited Lecture]
Controlling a formation of conducting filaments in a resistive change memory by nano holes of a porous alumina and improvement of the switching characteristics Kouichi Takase, Yusuke Tanimoto (Nihon Univ.), Shintaro Otsuka, Tomohiro Shimizu, Shoso Shingubara (Kansai Univ.) SDM2014-58 |
[more] | SDM2014-58 pp.79-84 |
| SDM | 2014-06-19 16:35 |
Aichi | VBL, Nagoya Univ. | [Invited Lecture]
Atomic switch-type resistive switching memory using oxide nanofilms and its applications Tohru Tsuruoka, Tsuyoshi Hasegawa (NIMS) SDM2014-59 |
We have investigated the operation mechanism of atomic switch-type resistive change memories based on the transport of m... [more] | SDM2014-59 pp.85-90 |
| SDM | 2014-06-19 16:55 |
Aichi | VBL, Nagoya Univ. | [Invited Lecture]
Low temperature poly-crystallization of group-IV semiconductor films on insulators
-- use of low-melting-point Sn -- Masashi Kurosawa (Nagoya Univ./JSPS), Noriyuki Taoka (Nagoya Univ.), Hiroshi Ikenoue (Kyushu Univ.), Wakana Takeuchi, Mitsuo Sakashita, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) SDM2014-60 |
Low temperature growth of Ge1－xSnx on insulators can provide much wider range of options for device fabrication of 3D-LS... [more] | SDM2014-60 pp.91-95 |
| SDM | 2014-06-19 17:15 |
Aichi | VBL, Nagoya Univ. | [Invited Lecture]
Oxidation-ambience-dependent near-interface structure of thermally grown oxide on 4H-SiC Hirohisa Hirai (Univ. of Tokyo), Koji Kita (Univ. of Tokyo/JST) SDM2014-61 |
[more] | SDM2014-61 pp.97-100 |
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