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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 4 of 4  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
ED, THz 2018-12-18
11:35		 Miyagi RIEC, Tohoku Univ. Crystal growth of 2D-layered semiconductor MoS2 by novel friction induced method
Takafumi Ito, Tadao Tanabe, Yutaka Oyama (Tohoku Univ.) ED2018-67		 As a new film formation technology for semiconductor crystals in semiconductor device processes, we have proposed a simp... [more] ED2018-67
pp.53-56
ED, THz 2017-12-18
14:30		 Miyagi RIEC, Tohoku Univ Tribological formation of chalcogenide 2D layered semiconductor MoS2 thin films
Takafuki Ito, Tadao Tanabe, Akinori Matsunaga, Yutaka Oyama (Tohoku Univ.) ED2017-75		 We propose a novel fabrication process of 2D layered semiconductors by using tribochemical reaction. This study is focus... [more] ED2017-75
pp.13-14
SDM 2016-06-29
16:40		 Tokyo Campus Innovation Center Tokyo MoS2 film formation by RF magnetron sputtering for thin film transistors
Takumi Ohashi, Kentaro Matsuura (Tokyo Tech), Seiya Ishihara, Yusuke Hibino, Naomi Sawamoto (Meiji Univ.), Kuniyuki Kakushima, Kazuo Tsutsui (Tokyo Tech), Atsushi Ogura (Meiji Univ.), Hitoshi Wakabayashi (Tokyo Tech) SDM2016-46		 Multi-layered MoS2 has been expected as a new candidate for complementary TFT material owing to its promising characteri... [more] SDM2016-46
pp.75-78
SDM 2015-06-19
17:10		 Aichi VBL, Nagoya Univ. [Invited Lecture] Fabrication and Characterization of MoS2 MOSFET with High-k/Metal Gate
Takahiro Mori (AIST), Naruki Ninomiya (YNU), Noriyuki Uchida, Toshitaka Kubo (AIST), Eiichiro Watanabe, Daiju Tsuya, Satoshi Moriyama (NIMS), Masatoshi Tanaka (YNU), Atsushi Ando (AIST) SDM2015-56		 We report the device fabrication and characterization of the high-k/metal gate MoS2 MOSFETs. To investigate the scatteri... [more] SDM2015-56
pp.99-103
 Results 1 - 4 of 4  /   
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