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All Technical Committee Conferences (Searched in: All Years)
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Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
SDM |
2014-06-19 14:05 |
Aichi |
VBL, Nagoya Univ. |
Theoretical Study of Electron Transportation in NanoScale Channel Genki Fujita, Taro Shiokawa (Univ. of Tsukuba), Yukihiro Takada (Tokyo Univ of Science), Satoru Konabe (Univ. of Tsukuba), Masakazu Muraguchi (Tohoku Univ.), Takahiro Yamamoto (Tokyo Univ. of Science), Tetsuo Endoh (Tohoku Univ.), Yasuhiro Hatsugai (Univ. of Tsukuba), Kenji Shiraishi (Nagoya Univ.) SDM2014-53 |
Numerical calculation of electron transportation considering long-range Coulomb interaction in Nanoscale channel [more] |
SDM2014-53 pp.55-58 |
SDM |
2011-11-11 15:45 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Higher-order Effects of Source and Drain Parasitic Resistances for Nanoscale MOSFETs Jong Chul Yoon, Akira Hiroki (Kyoto Institute of Tech.) SDM2011-129 |
Higher-order effects of source and drain parasitic resistances have been investigated for nanoscale MOSFETs. We have der... [more] |
SDM2011-129 pp.81-85 |
SDM [detail] |
2008-11-14 16:40 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
First-Principles Simulation of Electronic Bandstructures on Nanoscaled-Si Channels with Strain Effects Tadashi Maegawa, Tsuneki Yamauchi, Takeshi Hara, Hideaki Tsuchiya, Matsuto Ogawa (Kobe Univ.) SDM2008-183 |
In this paper, we present a comparative computational study on strain effects in Si nanostructures including bulk, thin ... [more] |
SDM2008-183 pp.83-88 |
SDM, VLD |
2006-09-26 15:00 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
To be announced Hideaki Tsuchiya, Kazuya Fujii, Takashi Mori, Tanroku Miyoshi (Kobe Univ.) |
Quasi-ballistic transport is one of the technology boosters for drive current enhancement of Si-MOSFETs. In this paper, ... [more] |
VLD2006-47 SDM2006-168 pp.49-54 |
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