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Conference Papers (Available on Advance Programs) (Sort by: Date Descending)

Committee	Date Time	Place		Paper Title / Authors	Abstract	Paper #
CPM, LQE, ED	2013-11-28 11:25	Osaka		Study on improvement of the light extraction efficiency in 350-nm-emission UV-LED Tsubasa Nakashima, Kenichiro Takeda, Motoaki Iwaya, Satoshi Kamiyama, Tetsuya Takeuchi, Isamu Akasaki (Meijo Univ.), Hiroshi Amano (Nagoya Univ.) ED2013-66 CPM2013-125 LQE2013-101	We have aimed to improve the light extraction efficiency by using p- and n- high-reflectivity indium tin oxide /Al elect... [more]	ED2013-66 CPM2013-125 LQE2013-101 pp.11-16
CPM, SDM, ED	2011-05-19 16:40	Aichi	Nagoya Univ. (VBL)	Growth of GaN and AlGaN on B-Ga2O3 (100) substrate Shun Ito, Kenichiro Takeda, Kengo Nagata, Hiroki Aoshima, Kosuke Takehara, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama (Meijo Univ), Isamu Akasaki, Hiroshi Amano (Meijo Univ/Nagoya Univ) ED2011-16 CPM2011-23 SDM2011-29	beta-Ga2O3 is one of the most attractive substrates for AlGaN-based UV light-emitting-diodes (LEDs). Its transparency up... [more]	ED2011-16 CPM2011-23 SDM2011-29 pp.77-81
CPM, SDM, ED	2011-05-19 17:30	Aichi	Nagoya Univ. (VBL)	High-quality AlN/GaN distributed Bragg reflectors grown on AlN templates Kouta Yagi, Mitsuru Kaga, Kouji Yamashita, Kenichiro Takeda, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama (Meijou Univ.), Isamu Akasaki (Meijou Univ./Nagoya Univ.), Hiroshi Amano (Nagoya Univ.) ED2011-18 CPM2011-25 SDM2011-31	AlN/GaN multilayer structures have relatively large refractive index differences in the group-III nitride semiconductors... [more]	ED2011-18 CPM2011-25 SDM2011-31 pp.89-93
CPM, SDM, ED	2011-05-20 10:50	Aichi	Nagoya Univ. (VBL)	High reflective electrode for UV light emitting diodes Kosuke Takehara, Kenichiro Takeda, Kengo Nagata, Hiroki Aoshima, Shun Ito, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki (Meijo Unv.), Hiroshi Amano (Nagoya Univ.) ED2011-23 CPM2011-30 SDM2011-36	Light extraction efficiency is one of the most critical factors for improving the efficiency of UV-LEDs. Combination of ... [more]	ED2011-23 CPM2011-30 SDM2011-36 pp.117-121
CPM, SDM, ED	2011-05-20 11:40	Aichi	Nagoya Univ. (VBL)	Internal quantum efficiency of AlGaN multiquantum wells Junichi Yamamoto, Kazuhito Ban, Kenichiro Takeda, Kimiyasu Ide, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama (Meijo Univ), Isamu Akasaki (Meijo Univ./Nagoya Univ.), Hiroshi Amano (Nagoya Univ.) ED2011-25 CPM2011-32 SDM2011-38	We analyzed the IQE of whole-composition-range AlGaN multi-quantum wells (MQWs) on AlGaN with various dislocation densit... [more]	ED2011-25 CPM2011-32 SDM2011-38 pp.127-130
ED, MW	2010-01-14 15:05	Tokyo	Kikai-Shinko-Kaikan Bldg	AlGaN channel high electron mobility transistors on AlN substrates. Shin Hashimoto, Katsushi Akita, Tatsuya Tanabe, Hideaki Nakahata (SEI), Kenichiro Takeda, Hiroshi Amano (Meijo Univ.) ED2009-188 MW2009-171	[more]	ED2009-188 MW2009-171 pp.77-80
ED, LQE, CPM	2009-11-19 15:20	Tokushima	Univ. of Tokushima (Josanjima Campus, Kogyo-Kaikan)	Thermodynamical aspects for the raised pressure MOVPE for growth of GaInN Kensuke Nagata, Daisuke Iida, Kentaro Nagamatsu, Kenichiro Takeda, Tetsuya Matsubara, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki (Meijo Univ) ED2009-140 CPM2009-114 LQE2009-119	High In content GaInN films are promising for many applications such as multi-junction tandem photovoltaic cells, high p... [more]	ED2009-140 CPM2009-114 LQE2009-119 pp.57-60
ED, LQE, CPM	2009-11-19 16:10	Tokushima	Univ. of Tokushima (Josanjima Campus, Kogyo-Kaikan)	Reduction in operating voltage of UV laser diode Tomoki Ichikawa, Kenichiro Takeda, Yuji Ogiso, Kengo Nagata, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki (Meijo Univ.), Harumasa Yoshida, Masakazu Kuwabara, Yoji Yamashita, Hirofumi Kan (Hamamatsu Photonics K.K.) ED2009-142 CPM2009-116 LQE2009-121	Annealing condition for n-type electrode in AlGaN-based UV LD was investigated. High temperature annealing is found to b... [more]	ED2009-142 CPM2009-116 LQE2009-121 pp.65-69
ED, LQE, CPM	2009-11-19 17:10	Tokushima	Univ. of Tokushima (Josanjima Campus, Kogyo-Kaikan)	High Efficiency ultraviolet emitters by activation annealing in oxygen flow Kengo Nagata, Tomoki Ichikawa, Kenichiro Takeda, Kentaro Nagamatsu, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki (Meijo Univ.) ED2009-144 CPM2009-118 LQE2009-123	Activation annealing of Mg-doped p-type Al0.17Ga0.83N in different gases was conducted. The hole concentration in Al0.17... [more]	ED2009-144 CPM2009-118 LQE2009-123 pp.75-80
ED, CPM, LQE	2006-10-06 13:40	Kyoto		Fabrication and Characterization of UV light emitter on various substrates Hirotaka Watanabe, Kazuyoshi Iida, Kenichiro Takeda, Kentaro Nagamatsu, Takafumi Sumii, Tetsuya Nagai, Krishnan Balakrishnan, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki (Meijo Univ.), Akira Bandoh (Showa-Denko)	[more]	ED2006-168 CPM2006-105 LQE2006-72 pp.87-92

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