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Committee Date Time Place Paper Title / Authors Abstract Paper #
ICD, SDM 2012-08-02
15:55		 Hokkaido Sapporo Center for Gender Equality, Sapporo, Hokkaido Scalable 3-D vertical chain-cell-type phase-change memory with 4F2 poly-Si diodes
Masaharu Kinoshita, Yoshitaka Sasago, Hiroyuki Minemura, Yumiko Anzai, Mitsuharu Tai, Yoshihisa Fujisaki, Shuichi Kusaba, Tadao Morimoto, Takashi Takahama, Toshiyuki Mine, Akio Shima, Yoshiki Yonamoto, Takashi Kobayashi (Hitachi) SDM2012-74 ICD2012-42		 A three-dimensional (3-D) vertical chain-cell-type phase-change memory (VCCPCM) for next-generation large-capacity stora... [more] SDM2012-74 ICD2012-42
pp.59-63
SDM, OME 2010-04-23
17:00		 Okinawa Okinawa-Ken-Seinen-Kaikan Bldg. Fabrication and characterization of IGZO-channel ferroelectric-gate TFTs with P(VDF-TrFE) film
Gwang-Geun Lee (Tokyo Inst. of Tech.), Sung-Min Yoon (ETRI), Joo-Won Yoon (Tokyo Inst. of Tech.), Yoshihisa Fujisaki (Hitachi), Hiroshi Ishiwara, Eisuke Tokumitsu (Tokyo Inst. of Tech.) SDM2010-16 OME2010-16		 Poly(vinylidene fluoride trifluoroethylene) , P(VDF-TrFE), and In-Ga-Zn-O (IGZO)were employed to fabricate nonvolatile m... [more] SDM2010-16 OME2010-16
pp.71-75
ITE-MMS, MRIS 2009-10-09
10:25		 Fukuoka FUKUOKA traffic center [Invited Talk] Low cost technology of phase change memory with low-contact-resistivity poly-Si selection diode
Yoshitaka Sasago, Masaharu Kinoshita, Takahiro Morikawa, Kenzo Kurotsuchi, Satoru Hanzawa, Toshiyuki Mine, Akio Shima, Yoshihisa Fujisaki, Hiroshi Moriya, Norikatsu Takaura, Kazuyoshi Torii (Hitachi) MR2009-26		 We have fabricated the cross-point phase change memory with a selection diode made of poly-Si. The selection diode was f... [more] MR2009-26
pp.31-35
ICD, SDM 2009-07-17
12:00		 Tokyo Tokyo Institute of Technology Cross-Point phase change memory with 4F2 cell size driven by low-contact resistivity poly-si diode
Yoshitaka Sasago, Masaharu Kinoshita, Takahiro Morikawa, Kenzo Kurotsuchi, Satoru Hanzawa, Toshiyuki Mine, Akio Shima, Yoshihisa Fujisaki, Hitoshi Kume, Hiroshi Moriya, Norikatsu Takaura, Kazuyoshi Torii (Hitachi) SDM2009-112 ICD2009-28		 We have fabricated the cross-point phase change memory with a selection diode made of poly-Si. The selection diode was f... [more] SDM2009-112 ICD2009-28
pp.79-83
SDM 2007-03-15
13:05		 Tokyo Kikai-Shinko-Kaikan Bldg. Ta2O5 Interfacial Layer between GST and W Plug enabling Low Power Operation of Phase Change Memories
Yuichi Matsui, Kenzo Kurotsuchi, Osamu Tonomura, Takahiro Morikawa, Masaharu Kinoshita, Yoshihisa Fujisaki, Nozomu Matsuzaki, Satoru Hanzawa, Motoyasu Terao, Norikatsu Takaura, Hiroshi Moriya, Tomio Iwasaki (Hitachi), Masahiro Moniwa, Tsuyoshi Koga (Renesas) 		A novel memory cell for phase-change memories (PCMs) that enables low-power operation has been developed. Power (i.e., c... [more] SDM2006-254
pp.1-6
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