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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| LQE, ED, CPM | 2023-11-30 16:20 |
Shizuoka | Design and fabrication of InGaN-based broadband light-emitting structures toward flexible electrical spectral modulation Haruyoshi Miyawaki, Yoshinobu Matsuda, Mitsuru Funato, Yoichi Kawakami (Kyoto Univ.)  ED2023-21 CPM2023-63 LQE2023-61 |
InGaN-based three-dimensional structures can realize multiwavelength-emitting structures without phosphors. Recently, we... [more] | ED2023-21 CPM2023-63 LQE2023-61 pp.36-39 |
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| LQE, ED, CPM | 2023-11-30 16:45 |
Shizuoka | Approaches toward broadband emission from semipolar InGaN quantum wells on GaN microlens structures Shogo Fukushige, Yoshinobu Matsuda, Mitsuru Funato, Yoichi Kawakami (Kyoto Univ.) ED2023-22 CPM2023-64 LQE2023-62 |
InGaN quantum wells (QWs) on three-dimensional (3D) structures provide multiwavelength emission without phosphors. Recen... [more] | ED2023-22 CPM2023-64 LQE2023-62 pp.40-43 |
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| CPM, ED, LQE | 2022-11-25 13:00 |
Aichi | Winc Aichi (Aichi Industry & Labor Center) (Primary: On-site, Secondary: Online) |
LED device operation of InGaN-based multiwavelength emission structures fabricated by a thermal reflow method Yoshinobu Matsuda, Mitsuru Funato, Yoichi Kawakami (Kyoto Univ.) ED2022-43 CPM2022-68 LQE2022-76 |
Multiwavelength light emitters composed of InGaN-based microstructures without phosphors impact various fields such as s... [more] | ED2022-43 CPM2022-68 LQE2022-76 pp.85-88 |
| CPM, LQE, ED | 2016-12-13 10:05 |
Kyoto | Kyoto University | Realization of multi-wavelength emission using polar plane-free InGaN multifacet quantum wells Yoshinobu Matsuda, Mitsuru Funato, Yoichi Kawakami (Kyoto Univ.) ED2016-70 CPM2016-103 LQE2016-86 |
InGaN quantum wells (QWs) grown on three dimensionally (3D) structured GaN are promising for phosphor-free white LEDs. H... [more] | ED2016-70 CPM2016-103 LQE2016-86 pp.67-70 |
| ED, LQE, CPM | 2015-11-26 13:10 |
Osaka | Osaka City University Media Center | Analysis of hole concentration and mobility of lightly Mg-doped p-type GaN by Hall-effect measurements Masahiro Horita (Kyoto Univ.), Shinya Takashima, Ryo Tanaka, Hideaki Matsuyama, Katsunori Ueno, Masaharu Edo (Fuji Electric), Jun Suda (Kyoto Univ.) ED2015-72 CPM2015-107 LQE2015-104 |
Lightly-Mg-doped p-type gallium nitride (GaN) with the Mg concentration of $6.5times 10^{16}~mbox{cm}^{-3}$ was characte... [more] | ED2015-72 CPM2015-107 LQE2015-104 pp.21-25 |
| OPE, EMD, CPM, LQE | 2009-08-20 15:15 |
Miyagi | InAs QDs Wideband LED by Selective MOVPE Growth using Double-Cap Procedure Yusuke Suzuki, Fumihiro Kawashima, Yasuhito Saito, Kazuhiko Shimomura (Sophia Univ.) EMD2009-38 CPM2009-62 OPE2009-86 LQE2009-45 |
Semiconductor self-assembled quantum dots (QDs) that have zero-dimensional carrier confinement structure are predicted t... [more] | EMD2009-38 CPM2009-62 OPE2009-86 LQE2009-45 pp.63-68 |
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| LQE, ED, CPM | 2008-11-27 10:20 |
Aichi | Nagoya Institute of Technology | A Proposal of InGaN-Based Multiple-Colored Light Emitting Devices Using Selective Area Metal-Organic Vapor Phase Epitaxy Tomonari Shioda, Yuki Tomita, Masakazu Sugiyama, Yukihiro Shimogaki, Yoshiaki Nakano (The Univ. of Tokyo) ED2008-154 CPM2008-103 LQE2008-98 |
Selective area metal-organic vapor phase epitaxy (SA-MOVPE) allows in-plane control of layer composition and thickness. ... [more] | ED2008-154 CPM2008-103 LQE2008-98 pp.13-16 |
| OPE, LQE | 2008-06-27 09:45 |
Tokyo | Kikai-Shinko-Kaikan Bldg | Fabrication of Quantum Dots Arrayed Waveguide and its Application for Optical Devices Yasuhito Saito, Masataka Akaishi, Tatsuya Ookawa, Kazuhiko Shimomura (Sophia University) OPE2008-18 LQE2008-19 |
Semiconductor self-assembled quantum dots (QDs) that have zero-dimensional carrier confinement structure are predicted ... [more] |
OPE2008-18 LQE2008-19 pp.1-6 |
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