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 Results 1 - 6 of 6  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2015-06-19
11:30		 Aichi VBL, Nagoya Univ. [Invited Lecture] Effect of oxynitridation annealing on defect properties at SiO2/SiC MOS interface
Wakana Takeuchi (Nagoya Univ.), Kensaku Yamamoto (DENSO CORP.), Mitsuo Sakashita (Nagoya Univ.), Takashi Kanemura (DENSO CORP.), Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) SDM2015-43		 We have investigated the effect of NO-annealing for SiO2/4H-SiC interface properties. The electrical properties of the N... [more] SDM2015-43
pp.27-30
SDM 2013-06-18
16:45		 Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Lecture] An attempt for clarification of SiC oxidation mechanism -- Common/different point to Si oxidation --
Yasuto Hijikata, Shuhei Yagi, Hiroyuki Yaguchi (Saitama Univ.) SDM2013-62		 Further understanding of the SiC oxidization mechanism is indispensable for MOSFET using a SiC semiconductor to exceed t... [more] SDM2013-62
pp.91-96
SDM 2012-10-25
15:45		 Miyagi Tohoku Univ. (Niche) AR-XPS and HAX-PES Studies on Chemical bonding states at SiO2/SiC Interfaces
Hazuki Okada, Arata Komatsu, Masato Watanabe (Tokyo City Univ.), Yudai Izumi, Takayuki Muro (JASRI), Kentaro Sawano, Hiroshi Nohira (Tokyo City Univ.) SDM2012-90		 (To be available after the conference date) [more] SDM2012-90
pp.5-9
SDM, ED
(2nd)		 2011-06-29
- 2011-07-01		 Overseas Legend Hotel, Daejeon, Korea Clear Difference between the Chemical Structure of SiO2/Si Interfaces Formed Using Oxygen Radicals and Oxygen Molecules
Tomoyuki Suwa, Akinobu Teramoto, Tadahiro Ohmi, Takeo Hattori (Tohoku Univ.) 		Soft-x-ray-excited angle-resolved photoelectron spectroscopy studies on silicon dioxide films formed using oxygen radica... [more]
SDM 2010-10-22
14:50		 Miyagi Tohoku University Crystallographic orientation dependence of compositional transition and valence band offset at SiO2/Si interface formed using oxygen radicals
Tomoyuki Suwa, Yuki Kumagai, Akinobu Teramoto, Tadahiro Ohmi, Takeo Hattori (Tohoku Univ.), Toyohiko Kinoshita, Takayuki Muro (JASRI) SDM2010-167		 The chemical and electronic-band structures of SiO2/Si interfaces formed utilizing oxygen radicals were investigated by ... [more] SDM2010-167
pp.61-65
ED, SDM 2010-07-02
12:15		 Tokyo Tokyo Inst. of Tech. Ookayama Campus High Integrity Gate Insulator Films on Atomically Flat Silicon Surface
Xiang Li, Rihito Kuroda, Tomoyuki Suwa, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.) ED2010-93 SDM2010-94		 A low temperature atomically flattening technology for Si(100) wafer is developed. By annealing in ultra pure argon ambi... [more] ED2010-93 SDM2010-94
pp.183-188
 Results 1 - 6 of 6  /   
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