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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| SS, KBSE, IPSJ-SE [detail] | 2023-07-22 09:55 |
Hokkaido | (Primary: On-site, Secondary: Online) |
Exploring the Magnetic or Sticky Nature of GitHub Ecosystems: NPM, PyPI, and Rubygems Shurong Sun, Olivier Nourry, Dong Wang, Yasutaka Kamei (Kyushu Univ.)  SS2023-17 KBSE2023-28 |
Software ecosystems consist of a number of software projects that are developed and evolve within a shared environment. ... [more] | SS2023-17 KBSE2023-28 pp.92-97 |
| VLD, DC, RECONF, ICD, IPSJ-SLDM (Joint) [detail] |
2020-11-17 09:55 |
Online | Online | Efficient computation of inductive invariant through flipflop selection Fudong Wang, Masahiro Fujita (U-Tokyo) VLD2020-20 ICD2020-40 DC2020-40 RECONF2020-39 |
As we all know, verification plays more and more important role in VLSI design and manufacture. However, it always takes... [more] | VLD2020-20 ICD2020-40 DC2020-40 RECONF2020-39 pp.54-59 |
| TL | 2019-03-18 11:45 |
Tokyo | Waseda University | What Makes Students Aware of the Significance of Logical Expression
-- Teaching Design and Analysis of Students Learning -- Dong Wang (TUFS) TL2018-58 |
(To be available after the conference date) [more] | TL2018-58 pp.43-46 |
| TL | 2018-12-09 15:30 |
Ehime | Ehime University | The reexamination of the nature of 'hayaku' : Be Means of Chinese Translation Dong Wang (TUFS) TL2018-49 |
[more] | TL2018-49 pp.29-31 |
| SDM | 2015-06-19 13:40 |
Aichi | VBL, Nagoya Univ. | Fabrication of PtGe/Ge contacts with low hole barrier and its application to metal source/drain Ge p-channel MOSFETs Yuta Nagatomi, Shintaro Tanaka, Yuichi Nagaoka, Keisuke Yamamoto, Dong Wang, Hiroshi Nakashima (Kyushu Univ.) SDM2015-47 |
The fabrication of PtGe/Ge contacts with low hole barrier height (ΦBP) and its electrical passivation were investigated.... [more] | SDM2015-47 pp.47-50 |
| SDM | 2014-06-19 09:50 |
Aichi | VBL, Nagoya Univ. | Investigation of Al-PMA Effect on Al2O3/GeOx/Ge Gate Stack Yuta Nagatomi, Yuichi Nagaoka, Keisuke Yamamoto, Dong Wang, Hiroshi Nakashima (Kyushu Univ.) SDM2014-44 |
We investigated the Al-PMA effect on Al2O3/GeOX/Ge gate stacks. The Al-PMA is effective for Al2O3/GeOX/Ge gate stacks, s... [more] | SDM2014-44 pp.7-10 |
| SDM | 2013-06-18 10:55 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Mobility Enhancement for Ge p-MOSFET with Metal Source/Drain by Hf Introduction into Gate Stack Keisuke Yamamoto, Takahiro Sada, Dong Wang, Hiroshi Nakashima (Kyushu Univ.) SDM2013-49 |
Metal source/drain (S/D) with extremely low parasitic resistance is needed for high performance Ge CMOS. We found that H... [more] | SDM2013-49 pp.29-32 |
| SDM | 2012-06-21 17:15 |
Aichi | VBL, Nagoya Univ. | Alleviation of Fermi level pinning for TiN/Ge contact and its application to MOS device Keisuke Yamamoto, Masatoshi Iyota, Dong Wang, Hiroshi Nakashima (Kyushu Univ.) SDM2012-61 |
It has been recognized that the formation of a metal/Ge contact with low electron barrier height and low contact resista... [more] | SDM2012-61 pp.97-102 |
| SDM | 2009-06-19 14:10 |
Tokyo | An401・402 Inst. Indus. Sci., The Univ. of Tokyo | Electrical Characterization of High-k Gate Dielectrics on Ge with HfGeN and GeO2 Interlayers
-- Formation of Insulator on Ge Substrate -- Hiroshi Nakashima, Kana Hirayama, Haigui Yang, Dong Wang (Kyushu Univ.) SDM2009-35 |
We are searching MIS structure with good interface and insulating properties for high mobility Ge channel. Our approach... [more] | SDM2009-35 pp.51-56 |
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