|
|
All Technical Committee Conferences (Searched in: All Years)
|
|
Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
|
Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
CPM |
2015-08-11 10:00 |
Aomori |
|
Formation of high density Ge-nanodots on SOI substrates
-- Aiming at enhancement of emission from Ge-nanodots using photonic crystal -- Makoto Morioka, Koudai Watanabe, Masataka Tomita, Hideyuki Toyota, Ariyuki Kato, Yasuhiro Tamayama, Toshio Kanbayashi, Kanji Yasui (Nagaona Univ. Technol.) CPM2015-41 |
Aiming at the enhancement of emission intensity from Ge nanodots using photonic crystal, the Ge nanodots were formed on ... [more] |
CPM2015-41 pp.51-55 |
CPM |
2012-10-27 12:15 |
Niigata |
|
Photoluminescence characteristics of high-density Ge nanodots on Si substrate by gas source MBE Yutaka Anezaki, Kai Sato, Takahiro Kato, Ariyuki Kato, Hideyuki Toyota (Nagaoka Univ. Techno.), Maki Suemitsu (Tohoku Univ.), Hideki Nakazawa (Hirosaki Univ.), Yuzuru Narita (Yamagata Univ.), Kanji Yasui (Nagaoka Univ. Techno.) CPM2012-111 |
Ge nanodots were formed on Si(001)-2˚off substrates after the formation of Si c(4×4) structure by gas-source molecu... [more] |
CPM2012-111 pp.97-100 |
ED |
2011-07-30 13:30 |
Niigata |
Multimedia system center, Nagaoka Univ. of Tech. |
Growth and characterization of GaSb film on Si(111) substrate using Sb template layer Hideyuki Toyota, Akinari Okabe, Yoshio Jinbo, Naotaka Uchitomi (Nagaoka Univ. Tech.) ED2011-54 |
We prepared GaSb films on Si(111) substrate by molecular beam epitaxy (MBE). To reduce misfit dislocations which are cau... [more] |
ED2011-54 pp.85-89 |
CPM |
2007-11-17 15:30 |
Niigata |
Nagaoka University of Technology |
Characterization of GaSb/AlGaSb multi-quantum-well structures grown on Si substrates Hideyuki Toyota, Takeshi Yasuda, Syuusaku Fujie (Nagaoka Univ. of Tech.), (Aoyama Gakuin Univ.), Yoshio Jinbo, Naotaka Uchitomi (Nagaoka Univ. of Tech.) CPM2007-127 |
We prepared GaSb/AlGaSb multiple-quantum-well (MQW) structures on silicon substrates by molecular beam epitaxy (MBE). To... [more] |
CPM2007-127 pp.115-119 |
|
|
|
Copyright and reproduction :
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
|
[Return to Top Page]
[Return to IEICE Web Page]
|