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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| SP, WIT | 2013-06-13 15:45 |
Niigata | A System Enables Character Input and PC Operation via Voice for a Physically Disabled Person with a Speech Impediment
-- A Development by Speech Recognition Engine Julius -- Toshimasa Tanioka, Yasuhisa Okazaki (Saga Univ.), Kenzi Watanabe (Hiroshma Univ.), Hiroki Kondo (Saga Univ.)  SP2013-39 WIT2013-9 |
We are developing a PC operation system by speech recognition for physically disabled person with a speech impediment. W... [more] | SP2013-39 WIT2013-9 pp.49-54 |
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| SDM | 2010-06-22 13:25 |
Tokyo | An401・402 Inst. Indus. Sci., The Univ. of Tokyo | The Crystalline Structures and Electrical Properties of PrAlO formed by Atomic Layer Deposition. Kazuya Furuta, Wakana Takeuchi, Mitsuo Sakashita, Hiroki Kondo, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) SDM2010-40 |
[more] | SDM2010-40 pp.39-42 |
| SDM | 2009-06-19 13:20 |
Tokyo | An401・402 Inst. Indus. Sci., The Univ. of Tokyo | Control of Interfacial Structure of High-k/Ge Gate Stack Using Radical Nitridation Kimihiko Kato, Hiroki Kondo, Mitsuo Sakashita, Shigeaki Zaima (Nagoya Univ.) SDM2009-33 |
To realize high mobility Ge channel metal-oxide-semiconductor field-effect-transistor (MOSFET), it is necessary to estab... [more] | SDM2009-33 pp.39-44 |
| SDM | 2009-06-19 14:50 |
Tokyo | An401・402 Inst. Indus. Sci., The Univ. of Tokyo | Effect of ALD-Al2O3 Layer on Interfacial Reaction between LaAlO and Ge Mitsuo Sakashita, Ryosuke Kato, Shinya Kyogoku, Hiroki Kondo, Shigeaki Zaima (Nagoya Univ.) SDM2009-37 |
Ge channel MOSFET with high-k gate dielectric film attract much attention from a viewpoint of realizing high speed and l... [more] | SDM2009-37 pp.61-66 |
| SDM | 2009-06-19 16:20 |
Tokyo | An401・402 Inst. Indus. Sci., The Univ. of Tokyo | Formation of Pr Oxide by Atomic Layer Deposition Using Pr(EtCp)3. Hiroki Kondo, Kazuya Furuta, Hirotaka Matsui, Mitsuo Sakashita, Shigeaki Zaima (Nagoya Univ.) SDM2009-41 |
Formation of Pr oxide by atomic layer deposition (ALD) using Pr(EtCp)3 precursor was investigated, and ALD growth of Pr ... [more] | SDM2009-41 pp.81-85 |
| SDM | 2008-06-10 13:10 |
Tokyo | An401・402, Inst. Indus. Sci., The Univ. of Tokyo | Fabrication of Pr oxide films by MOCVD and evaluation of its electrical properties Hiroki Kondo, Shinya Sakurai (Nagoya Univ.), Akira Sakai (Osaka Univ.), Masaki Ogawa, Shigeaki Zaima (Nagoya Univ.) SDM2008-54 |
Metal organic chemical vapor deposition (MOCVD) of Pr2O3 films using Pr(EtCp)3 and their electrical properties were inve... [more] | SDM2008-54 pp.71-75 |
| IA | 2005-05-25 14:00 |
Aichi | Nagoya Univerisity (Higashiyama Campus) | Research Project for Ubiquitous Society with IPv6 at Technical High Schools
-- Summary and Objects of the Project -- Kenzi Watanabe, Hiroki Kondo (Saga Univ.) |
In this project, technical high schools students try to create future ubiquitous society. They have been developed a cou... [more] | IA2005-4 pp.19-24 |
| ET | 2004-12-18 09:20 |
Oita | A WWW-based Intelligent Mathematical Calculation Tutoring System with Handwriting Interface for Elementary Arithmetic XiangYang Feng, Yasuhisa Okazaki, Hiroki Kondo (Saga Univ.) |
[more] | ET2004-74 pp.7-12 |
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