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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| SDM | 2024-01-31 15:50 |
Tokyo | KIT Toranomon Graduate School (Primary: On-site, Secondary: Online) |
[Invited Talk]
Physical Reservoir Computing using HZO-based FeFETs for Edge-AI Applications Shin-ichi Takagi, Kasidit Toprasertpong, Eishin Nkako, Rikuo Suzuki, Shin-Yi Min, Mitsuru Takenaka, Ryosho Nakane (The Univ. of Tokyo)  SDM2023-80 |
Physical reservoir computing (RC) using ferroelectric HfZrO2/Si FeFETs is proposed and demonstrated for application to e... [more] | SDM2023-80 pp.24-27 |
| ICD | 2023-04-10 13:20 |
Kanagawa | (Primary: On-site, Secondary: Online) |
[Invited Talk]
Novel scheme of HZO/Si FeFET reservoir computing for speech recognition Eishin Nako, Kasidit Toprasertpong, Ryosho Nakane, Mitsuru Takenaka, Shinichi Takagi (The Univ. of Tokyo) ICD2023-4 |
We have demonstrated reservoir computing (RC) using HZO/Si ferroelectric gate FETs (FeFETs), which realizes efficient ti... [more] | ICD2023-4 p.9 |
| MBE, NC (Joint) |
2022-03-02 09:55 |
Online | Online | NC2021-47 |
In this paper, we propose reconstructive reservoir computing (RRC), which can detect anomaly in time-series signals. In ... [more] | NC2021-47 pp.5-10 |
| MBE, NC (Joint) |
2022-03-02 15:20 |
Online | Online | NC2021-56 |
We propose a spin-wave antenna structure that penetrates a garnet film, which we named film-penetrating transducers (FPT... [more] | NC2021-56 pp.50-55 |
| SDM | 2021-11-11 13:00 |
Online | Online | [Invited Talk]
Prospects of HfZrO2-based FeFETs for Ultra-low Power Memory, Logic and AI Applications Shinichi Takagi, Kasidit Toprasertpong, Xuan Luo, Eishin Nako, Zeyu Wang, Tsung-En Lee, Kento Tahara, Mitsuru Takenaka, Ryosho Nakane (U. Tokyo) SDM2021-55 |
Since the discovery of ferroelectricity in HfO2-based dielectric films in 2011, FeFETs using HfO2-based thin films as ga... [more] | SDM2021-55 pp.13-18 |
| ICD, SDM, ITE-IST [detail] | 2020-08-07 10:15 |
Online | Online | [Invited Talk]
Reservoir Computing using Hf0.5Zr0.5O2/Si FeFETs for Neuromorphic Applications Eishin Nako, Kasidit Toprasertpong, Ryosho Nakane, Zeyu Wang, Yuto Miyatake, Mitsuru Takenaka, Shinichi Takagi (Univ. Tokyo) SDM2020-7 ICD2020-7 |
[more] | SDM2020-7 ICD2020-7 pp.31-36 |
| NC, MBE (Joint) |
2019-03-05 10:20 |
Tokyo | University of Electro Communications | Reservoir computing devices that realize pattern information representation and processing directly in physics: Its advantages Akira Hirose, Gouhei Tanaka (Tokyo Univ.), Seiji Takeda, Toshiyuki Yamane, Hidetoshi Numata, Naoki Kanazawa, JeanBenoit Heroux, Daiju Nakano (IBM Japan), Ryosho Nakane (Tokyo Univ.) NC2018-65 |
[more] | NC2018-65 pp.117-120 |
| NC, MBE (Joint) |
2019-03-05 10:45 |
Tokyo | University of Electro Communications | Spatial distribution of effective information in spin-wave reservoir computing Takehiro Ichimura, Ryosho Nakane, Gohei Tanaka, Akira Hirose (The Univ. of Tokyo) NC2018-66 |
This paper reports the spatial distribution of effective information for function learning in a spin-wave reservoir-compu... [more] | NC2018-66 pp.121-126 |
| SDM | 2015-01-27 10:50 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
High Ion/Ioff Ge-source Ultrathin Body Strained-SOI Tunnel FETs
-- Impact of Channel Strain, MOS Interfaces and Back Gate on the Electrical Properties -- Minsoo Kim, Yuki K. Wakabayashi, Ryosho Nakane, Masafumi Yokoyama, Mitsuru Takenaka, Shinichi Takagi (The Univ. of Tokyo) SDM2014-137 |
High performance operation of Ge-source/strained-Si-channel hetero-junction tunnel FETs is demonstrated. It is found tha... [more] | SDM2014-137 pp.9-12 |
| IBISML | 2014-11-18 15:00 |
Aichi | Nagoya Univ. | [Poster Presentation]
Performance analysis of auto-associative neural networks on diluted modular networks Toshiyuki Yamane (TRL), Gouhei Tanaka (Univ. Tokyo), Daiju Nakano (TRL), Ryosho Nakane (Univ. Tokyo), Yasunao Katayama (TRL) IBISML2014-82 |
We report the performance analysis of auto-associative neural networks on modular structures. We focus on the sparse mo... [more] |
IBISML2014-82 pp.351-356 |
| SDM | 2014-01-29 15:05 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
High Performance Sub-20-nm-Channel-Length Extremely-Thin Body InAs-on-Insulator Tri-Gate MOSFETs with High Short Channel Effect Immunity and Vth Tunability S. H. Kim, Masafumi Yokoyama, Ryosho Nakane (Univ. of Tokyo), Osamu Ichikawa, Takenori Osada, Masahiko Hata (Sumitomo Chemical), Mitsuru Takenaka, Shinichi Takagi (Univ. of Tokyo) SDM2013-144 |
[more] | SDM2013-144 pp.39-42 |
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