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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 5 of 5  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
LQE, ED, CPM 2023-11-30
15:20
Shizuoka   Formation of p-type GaN by Mg thermal diffusion and challenges for device applications
Yuta Itoh, Hirotaka Watanabe, Manato Deki, Shugo Nitta, Atsushi Tanaka, Yoshio Honda, Hiroshi Amano (Nagoya Univ.) ED2023-19 CPM2023-61 LQE2023-59
Establishment of a localized p-type doping technique is essential to realize vertical GaN power devices. However, in Mg ... [more] ED2023-19 CPM2023-61 LQE2023-59
pp.25-30
LQE, ED, CPM 2023-11-30
15:45
Shizuoka   Growth of low carbon density GaN on (0001) plane by MOVPE
Hirotaka Watanabe, Shugo Nitta, Naoki Fujimoto, Seiya Kawasaki, Takeru Kumabe, Kazuki Ohnishi, Yoshio Honda, Hiroshi Amano (Nagoya Univ.) ED2023-20 CPM2023-62 LQE2023-60
 [more] ED2023-20 CPM2023-62 LQE2023-60
pp.31-35
SDM 2019-06-21
16:25
Aichi Nagoya Univ. VBL3F Evaluation of Interface Characteristics in GaN-MOS Capacitors with Boron-doped Al2O3 Gate Insulators
Manato Deki, Shin Okude, Yuto Ando, Hirotaka Watanabe, Atsushi Tanaka, Maki Kushimoto, Shugo Nitta, Yoshio Honda, Hiroshi Amano (Nagoya Univ.) SDM2019-34
 [more] SDM2019-34
pp.43-46
SDM 2018-06-25
11:00
Aichi Nagoya Univ. VBL3F Evaluation of Interface State Density in GaN-MOS Capacitors on Miscut m-plane GaN Substrates
Manato Deki, Yuto Ando, Hirotaka Watanabe, Atsushi Tanaka, Maki Kushimoto, Shugo Nitta, Yoshio Honda, Hiroshi Amano (Nagoya Univ.) SDM2018-16
 [more] SDM2018-16
pp.1-4
LQE, CPM, ED 2017-11-30
15:25
Aichi Nagoya Inst. tech. Study on oxygen reduction in MOVPE growth of GaN on -c-plane GaN substrate
Tsukasa Kono, Maki Kushimoto, Kentaro Nagamatsu, Shugo Nitta, Yoshio Honda, Hiroshi Amano (Nagoya Univ.) ED2017-53 CPM2017-96 LQE2017-66
GaN epitaxial layer grown on -c plane substrate by MOVPE has a smaller amount of carbon incorporation that compensates e... [more] ED2017-53 CPM2017-96 LQE2017-66
pp.19-22
 Results 1 - 5 of 5  /   
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