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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
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Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2018-10-17
16:05		 Miyagi Niche, Tohoku Univ. Fabrication process of Hf-based MONOS nonvolatile memory with Si(100) surface flattening process
Sohya Kudoh, Yusuke Horiuchi, Shun-ichiro Ohmi (Tokyo Tech.) SDM2018-55		 We have reported nonvolatile memory characteristics of Hf-based MONOS diodes were improved by using atomically flat Si(1... [more] SDM2018-55
pp.15-19
SDM 2017-10-25
15:20		 Miyagi Niche, Tohoku Univ. Si surface atomically flattening process with chemical oxide passivation for Ar/H2 annealing and Hf-based MONOS device application
Sohya Kudoh, Shun-ichiro Ohmi (Tokyo Tech.) SDM2017-52		 MONOS type nonvolatile memory is a promising candidate to replace the floating gate type nonvolatile memory (NVM). It w... [more] SDM2017-52
pp.15-19
SDM 2016-10-27
11:15		 Miyagi Niche, Tohoku Univ. Effect of Si surface flatness on electrical characteristics of Hf-based MONOS structure
Sohya Kudoh, Shun-ichiro Ohmi (Tokyo Tech) SDM2016-76		 MONOS type nonvolatile memory is a promising candidate to replace floating gate type nonvolatile memory. In this study,... [more] SDM2016-76
pp.39-44
SDM 2015-10-29
14:50		 Miyagi Niche, Tohoku Univ. A study on Si surface flattening process by annealing Ar/H2ambient
Sohya Kudoh, Shun-ichiro Ohmi (Tokyo Tech) SDM2015-72		 It has been reported that the atomically flat surface of Si(100) is able to be obtained by annealing in ultra-pure Ar am... [more] SDM2015-72
pp.7-12
SDM 2014-10-16
15:20		 Miyagi Niche, Tohoku Univ. A study on Si surface flattening process utilizing atmospheric annealing system
Sohya Kudoh, Shun-ichiro Ohmi (Tokyo Tech) SDM2014-86		 It has been reported that the atomically flat surface of Si(100) is able to be obtained by annealing in ultra-pure Ar am... [more] SDM2014-86
pp.13-17
 Results 1 - 5 of 5  /   
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