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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 6 of 6  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM, ED 2009-06-25
09:00		 Overseas Haeundae Grand Hotel, Busan, Korea [Invited Talk] Novel-Functional Single-Electron Devices Using Silicon Nanodot Array
Yasuo Takahashi, Takuya Kaizawa, Mingyu Jo, Masashi Arita (Hokkaido Univ.), Akira Fujiwar, Yukinori Ono (NTT), Hiroshi Inokawa (Shizuoka Univ.), Jung-Bum Choi (Chungbuk National Univ.) ED2009-83 SDM2009-78		 We demonstrate a highly functional Si nanodot array device that operates by means of single-electron effects. The device... [more] ED2009-83 SDM2009-78
pp.145-148
SDM, ED 2009-06-26
12:00		 Overseas Haeundae Grand Hotel, Busan, Korea Fabrication of double-dot single-electron transistor in silicon nanowire
Mingyu Jo, Takuya Kaizawa, Masashi Arita (Hokkaido Univ.), Akira Fujiwara, Yukinori Ono (NTT), Hiroshi Inokawa (Shizuoka Univ.), Jung-Bum Choi (Chungbuk National Univ.), Yasuo Takahashi (Hokkaido Univ.) ED2009-94 SDM2009-89		 We propose a simple method for the fabrication of Si single-electron transistors (SET) with coupled dots by means of pat... [more] ED2009-94 SDM2009-89
pp.189-192
SDM, ED 2009-02-27
09:25		 Hokkaido Hokkaido Univ. Dual-dot single-electron transistor fabricated in silicon nanowire
Mingyu Jo, Takuya Kaizawa, Masashi Arita (Hokkaido Univ.), Akira Fujiwara (NTT), Yasuo Takahashi (Hokkaido Univ.) ED2008-233 SDM2008-225		 It is well known that a Si single-electron transistor (SET) is automatically fabricated by means of pattern-dependent ox... [more] ED2008-233 SDM2008-225
pp.53-58
ED, SDM 2008-01-31
11:40		 Hokkaido   Half adder operation using 2-output single-electron device composed of a Si nanodot array
Takuya Kaizawa, Mingyu Jo, Masashi Arita (Hokkaido Univ.), Akira Fujiwara, Kenji Yamazaki, Yukinori Ono (NTT), Hiroshi Inokawa (HShizuoka Univ.), Yasuo Takahashi (Hokkaido Univ.) ED2007-250 SDM2007-261		  [more] ED2007-250 SDM2007-261
pp.69-73
SDM, ED 2007-02-01
16:20		 Hokkaido   Single-electron device using Si nanodot array and multi-input gates
Takuya Kaizawa, Masashi Arita (Hokkaido Univ.), Akira Fujiwara, Kenji Yamazaki, Yukinori Ono (NTT), Hiroshi Inokawa (Shizuoka Univ.), Yasuo Takahashi (Hokkaido Univ.) 		 [more] ED2006-246 SDM2006-234
pp.35-40
ED, SDM 2006-01-26
14:20		 Hokkaido Hokkaido Univ. -
Takuya Kaizawa, Masashi Arita, Yasuo Takahashi (Hokkaido Univ.) 		 [more] ED2005-226 SDM2005-238
pp.13-18
 Results 1 - 6 of 6  /   
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