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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 6 of 6  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
EE 2021-01-25
13:55		 Online Online (Zoom) Analysis on the turn-on transient of cascode connected Polarization Super-Junction GaN-FET
Daisuke Arai (Nagoya Univ.), Yusuke Kamiyama, Shuichi Yagi, Hiroji Kawai, Hironobu Narui (POWDEC), Jun Imaoka, Masayoshi Yamamoto (Nagoya Univ.) EE2020-32		 The turn-on transient of the cascode connected Polarization Super-Junction (PSJ) GaN-FET with 1200V class has been inves... [more] EE2020-32
pp.47-52
WPT 2014-06-06
14:20		 Tokyo Univ. of Tokyo Prototype of GaN schottky diode for a rectenna
Teruo Fujiwara, Yuichiro Ozawa, Naohiro Tanaka (IHI AEROSPACE), Masaaki Kuzuhara (Univ. of Fukui), Kazuhiro Fujimori (Okayama Univ.), Shuichi Yagi (POWDEC), Keisuke Naito (NDK), Shoichiro Mihara, Shuji Nakamura (J-spacesystems) WPT2014-26		 Schottky Barrier Diode based on GaN semiconductor is developing for high effciency 5.8GHz rectenna toward Space Solar Po... [more] WPT2014-26
pp.11-16
CPM, LQE, ED 2010-11-12
10:50		 Osaka   Vertical GaN Diode on GaN Free-Standing Substrate
Shuichi Yagi, Shoko Hirata, Yasunobu Sumida, Masahiro Bessho, Hiroji Kawai (POWDEC), Toshiharu Matsueda, Akira Usui (Furukawa Co., Ltd.) ED2010-156 CPM2010-122 LQE2010-112		 We report the fabrication of schottky barrier diode (SBD) on GaN free-standing substrate. SBDs showed good DC operating... [more] ED2010-156 CPM2010-122 LQE2010-112
pp.63-66
LQE, ED, CPM 2008-11-28
13:30		 Aichi Nagoya Institute of Technology Normally-off mode AlGaN/GaN HEMTs with p-InGaN Cap Layer
Xu Li, Masahito Kurouchi, Shigeru Kishimoto, Takashi Mizutani (Nagoya Univ.), Fumihiko Nakamura (POWDEC) ED2008-177 CPM2008-126 LQE2008-121		 We have fabricated AlGaN/GaN HEMTs with a thin p-InGaN cap layer and measured I-V characteristics of the devices. For th... [more] ED2008-177 CPM2008-126 LQE2008-121
pp.125-130
ED 2008-06-13
13:00		 Ishikawa Kanazawa University Surface passivation of AlGaN/GaN heterojunction field-effect transistors by SiN/AlN bilayer structure
Nariaki Tanaka (JAIST), Yasunobu Sumida, Hiroji Kawai (POWDEC), Toshi-kazu Suzuki (JAIST) ED2008-22		 By using AlN single layer, SiN single layer, or SiN/AlN bilayer structure, we have investigated surface passivation of A... [more] ED2008-22
pp.1-4
ED 2007-06-16
10:35		 Toyama Toyama Univ. Surface passivation of AlGaN/GaN HFETs by RF magnetron sputtering using AlN target
Nariaki Tanaka (JAIST), Yasunobu Sumida (POWDEC), Toshi-kazu Suzuki (JAIST) ED2007-43		 We have investigated AlN surface passivation for AlGaN/GaN heterojunction field-effect transistors (HFETs). After the ... [more] ED2007-43
pp.67-70
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