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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
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Committee Date Time Place Paper Title / Authors Abstract Paper #
ED, LQE, CPM 2018-11-29
Aichi Nagoya Inst. tech. Improvement of channel mobility in GaN-MOS structure by surface treatment of recessed-GaN and dielectric SiO2 annealing
Yosuke Kajiwara, Aya Shindome, Toshiki Hikosaka, Masahiko Kuraguchi (Toshiba Corp.), Akira Yoshioka (Toshiba Electronic Device & Storage Corp.), Shinya Nunoue (Toshiba Corp.) ED2018-35 CPM2018-69 LQE2018-89
In the previous work, we studied on the channel mobility in the Normally-off recessed GaN-based metal-oxide-semiconducto... [more] ED2018-35 CPM2018-69 LQE2018-89
LQE, CPM, ED 2017-12-01
Aichi Nagoya Inst. tech. Improvement of PBTI reliability in GaN-MOSFETs
Yosuke Kajiwara, Toshiya Yonehara, Daimotsu Kato, Kenjiro Uesugi, Aya Shindome, Masahiko Kuraguchi, Akira Mukai, Hiroshi Ono, Miki Yumoto, Akira Yoshioka, Shinya Nunoue (Toshiba) ED2017-62 CPM2017-105 LQE2017-75
 [more] ED2017-62 CPM2017-105 LQE2017-75
CPM, LQE, ED 2016-12-12
Kyoto Kyoto University Evaluating Current Collapse of GaN HEMT devices by Carrier Number
Kohei Oasa, Akira Yoshioka, Yasunobu Saito, Takuo Kikuchi, Tatsuya Ohguro, Takeshi Hamamoto, Toru Sugiyama (TOSHIBA) ED2016-62 CPM2016-95 LQE2016-78
We report a new method to evaluate current collapse. To exclude self-heating effect during dynamic test, we propose carr... [more] ED2016-62 CPM2016-95 LQE2016-78
IA 2007-07-20
Kyoto room1 (J501) on 5th floor in J bldg, Kyoto Women's University Quality improvement by using bicast and the evaluation with VoIP
Akira Yoshioka, Toshihiko Watanabe (Toyota ITC), Tomohiko Kusuda (iNetCore), Harumitsu Inoue, Makoto Nishikawa (Toyota ITC), Kenichi Nagami, Ikuo Nakagawa (iNetCore) IA2007-28
(Advance abstract in Japanese is available) [more] IA2007-28
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