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All Technical Committee Conferences (Searched in: All Years)
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| Search Results: Conference Papers |
| Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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| Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
| SDM |
2016-01-28
11:00 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
[Invited Talk]
Understanding of BTI for Tunnel FETs
Wataru Mizubayashi, Takahiro Mori, Koichi Fukuda, Yuki Ishikawa, Yukinori Morita, Shinji Migita, Hiroyuki Ota, Yongxun Liu, Shinichi O'uchi, Junichi Tsukada, Hiromi Yamauchi, Takashi Matsukawa, Meishoku Masahara, Kazuhiko Endo (AIST)  SDM2015-122 |
(To be available after the conference date) [more] |
SDM2015-122
pp.9-12 |
| SDM |
2015-01-27
15:30 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
[Invited Talk]
Accurate Prediction of PBTI Lifetime in N-type Fin-Channel High-k Tunnel FETs
Wataru Mizubayashi, Takahiro Mori, Koichi Fukuda, Yongxun Liu, Takashi Matsukawa, Yuki Ishikawa, Kazuhiko Endo, Shinichi Ohuchi, Junichi Tsukada, Hiromi Yamauchi, Yukinori Morita, Shinji Migita, Hiroyuki Ota, Meishoku Masahara (AIST) SDM2014-143 |
The positive bias temperature instability (PBTI) characteristics for n-type fin-channel tunnel FETs (TFETs) with high-k ... [more] |
SDM2014-143
pp.33-36 |
| SDM |
2015-01-27
16:20 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
[Invited Talk]
Scaling Breakthrough for Analog/Digital Circuits by Suppressing Variability and Low-Frequency Noise for FinFETs by Amorphous Metal Gate Technology
Takashi Matsukawa, Koichi Fukuda, Yongxun Liu, Junichi Tsukada, Hiromi Yamauchi, Yuki Ishikawa, Kazuhiko Endo, Shinichi O'uchi, Shinji Migita, Wataru Mizubayashi, Yukinori Morita, Hiroyuki Ota, Meishoku Masahara (AIST) SDM2014-145 |
[more] |
SDM2014-145
pp.41-44 |
| SDM |
2014-01-29
10:50 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
[Invited Talk]
Heated Ion Implantation Technology for Highly Reliable Metal-gate/High-k CMOS SOI FinFETs
Wataru Mizubayashi (AIST), Hiroshi Onoda, Yoshiki Nakashima (Nissin Ion Equipment), Yuki Ishikawa, Takashi Matsukawa, Kazuhiko Endo, Yongxun Liu, Shinichi Ouchi, Junichi Tsukada, Hiromi Yamauchi, Shinji Migita, Yukinori Morita, Hiroyuki Ota, Meishoku Masahara (AIST) SDM2013-138 |
The impact of heated ion implantation (I/I) technology on metal-gate (MG)/high-k (HK) CMOS SOI FinFET performance and re... [more] |
SDM2013-138
pp.13-16 |
| ICD |
2011-04-19
10:55 |
Hyogo |
Kobe University Takigawa Memorial Hall |
0.5-V FinFET SRAM Using Dynamic-Threshold-Voltage Pass Gates
Shin-ichi O'uchi, Kazuhiko Endo, Yongxun Liu, Takashi Matsukawa, Tadashi Nakagawa, Yuki Ishikawa, Junichi Tsukada, Hiromi Yamauchi, Toshihiro Sekigawa, Hanpei Koike, Kunihiro Sakamoto, Meishoku Masahara (AIST) ICD2011-11 |
This article presents a FinFET SRAM which salvages malfunctioned bits caused by random variation. In the presenting SRAM... [more] |
ICD2011-11
pp.59-63 |
| ICD, SDM |
2010-08-27
16:25 |
Hokkaido |
Sapporo Center for Gender Equality |
On the Gate-Stack Origin Threshold Voltage Variability in Scaled FinFETs and Multi-FinFETs
Yongxun Liu, Kazuhiko Endo, Shinich Ouchi (AIST), Takahiro Kamei (Meiji Univ.), Junichi Tsukada, Hiromi Yamauchi, Yuki Ishikawa (AIST), Tetsuro Hayashida (Meiji Univ.), Kunihiro Sakamoto, Takashi Matsukawa (AIST), Atsushi Ogura (Meiji Univ.), Meishoku Masahara (AIST) SDM2010-151 ICD2010-66 |
The threshold voltage (Vt) variability in scaled FinFETs with gate length down to 20 nm was systematically investigated.... [more] |
SDM2010-151 ICD2010-66
pp.149-154 |
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